PMCXB900UELZ

PMCXB900UEL 20 V, complementary N/P-channel Trench MOSFET 28 June 2016 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • • Low leakage current Trench MOSFET technology Very low threshold voltage for portable applications: VGS(th) = 0.7 V Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM 3. Applications • • • • Relay driver High-speed line driver Level shifter Power management in battery-driven portables 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C - - 20 V -8 - 8 V - - 600 mA - - -20 V -8 - 8 V - 470 620 mΩ TR1 (N-channel) VDS drain-source voltage VGS gate-source voltage ID drain current VGS = 4.5 V; Tamb = 25 °C [1] TR2 (P-channel) VDS drain-source voltage VGS gate-source voltage Tj = 25 °C TR1 (N-channel), Static characteristics RDSon drain-source on-state resistance [1] VGS = 4.5 V; ID = 600 mA; Tj = 25 °C 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm . PMCXB900UEL Nexperia 20 V, complementary N/P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 Simplified outline Graphic symbol source TR1 D2 D1 1 6 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 Transparent top view 7 D1 drain TR1 DFN1010B-6 (SOT1216) 8 D2 drain TR2 7 2 3 5 8 G1 G2 4 S1 S2 017aaa262 6. Ordering information Table 3. Ordering information Type number PMCXB900UEL Package Name Description Version DFN1010B-6 DFN1010B-6: plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals SOT1216 7. Marking Table 4. Marking codes Type number Marking code PMCXB900UEL B 110 PMCXB900UEL Product data sheet All information provided in this document is subject to legal disclaimers. 28 June 2016 © Nexperia B.V. 2017. All rights reserved 2 / 21 PMCXB900UEL Nexperia 20 V, complementary N/P-channel Trench MOSFET MARKING CODE (EXAMPLE) READING DIRECTION MARK-FREE AREA PIN 1 INDICATION MARK READING EXAMPLE: YEAR DATE CODE A 110 VENDOR CODE aaa-019766 Fig. 1. PMCXB900UEL Product data sheet All information provided in this document is subject to legal disclaimers. 28 June 2016 © Nexperia B.V. 2017. All rights reserved 3 / 21 PMCXB900UEL Nexperia 20 V, complementary N/P-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Tj = 25 °C - 20 V -8 8 V TR1 (N-channel) VDS drain-source voltage VGS gate-source voltage ID drain current VGS = 4.5 V; Tamb = 25 °C [1] - 600 mA VGS = 4.5 V; Tamb = 100 °C [1] - 400 mA - 2.5 A [2] - 265 mW [1] - 380 mW Tsp = 25 °C - 4025 mW Tj = 25 °C - -20 V -8 8 V IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C TR2 (P-channel) VDS drain-source voltage VGS gate-source voltage ID drain current VGS = -4.5 V; Tamb = 25 °C [1] - -500 mA VGS = -4.5 V; Tamb = 100 °C [1] - -300 mA - -2 A [2] - 265 mW [1] - 380 mW - 4025 mW IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Per device Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C TR1 (N-channel), Source-drain diode IS source current Tamb = 25 °C [1] - 400 mA Tamb = 25 °C [1] - -350 mA TR2 (P-channel), Source-drain diode IS source current [1] [2] PMCXB900UEL Product data sheet 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. All information provided in this document is subject to legal disclaimers. 28 June 2016 © Nexperia B.V. 2017. All rights reserved 4 / 21 PMCXB900UEL Nexperia 20 V, complementary N/P-channel Trench MOSFET 017aaa123 120 017aaa124 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 2. - 25 25 75 125 Tj (°C) 0 - 75 175 MOSFET transistor: Normalized total power dissipation as a function of junction temperature Fig. 3. - 25 25 75 125 175 MOSFET transistor: Normalized continuous drain current as a function of junction temperature aaa-008997 10 Limit RDSon = VDS/ID ID (A) Tj (°C) tp = 10 µs 1 tp = 100 µs 10-1 tp = 1 ms DC; Tsp = 25 °C tp = 10 ms DC; Tamb = 25 °C; drain mounting pad 1 cm2 10-2 10-1 1 tp = 100 ms 10 102 VDS (V) IDM = single pulse Fig. 4. TR1 (N-channel): safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage PMCXB900UEL Product data sheet All information provided in this document is subject to legal disclaimers. 28 June 2016 © Nexperia B.V. 2017. All rights reserved 5 / 21 PMCXB900UEL Nexperia 20 V, complementary N/P-channel Trench MOSFET aaa-006901 -10 ID (A) Limit RDSon = VDS/ID tp = 10 µs -1 100 µs 1 ms -10-1 DC; Tsp = 25 °C 10 ms DC; Tamb = 25 °C; drain mounting pad 1 cm2 -10-2 -10-1 -1 100 ms -10 -102 VDS (V) IDM = single pulse Fig. 5. TR2 (P-channel): safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Symbol Thermal characteristics Parameter Conditions Min Typ Max Unit [1] - 410 475 K/W [2] - 285 330 K/W - 27 31 K/W [1] - 410 475 K/W [2] - 285 330 K/W - 27 31 K/W TR1 (N-channel) Rth(j-a) Rth(j-sp) thermal resistance from junction to ambient in free air thermal resistance from junction to solder point TR2 (P-channel) Rth(j-a) Rth(j-sp) thermal resistance from junction to ambient in free air thermal resistance from junction to solder point [1] [2] PMCXB900UEL Product data sheet Device mounted on an FR4 PCB, single-sided copper; tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm . All information provided in this document is subject to legal disclaimers. 28 June 2016 © Nexperia B.V. 2017. All rights reserved 6 / 21 PMCXB900UEL Nexperia 20 V, complementary N/P-channel Trench MOSFET aaa-006902 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 0 0.02 0.01 10 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 6. TR1 and TR2: transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-006903 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 0 10 10-3 0.02 0.01 10-2 10-1 FR4 PCB, mounting pad for drain 1 cm Fig. 7. 1 10 102 tp (s) 103 2 TR1 and TR2: transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMCXB900UEL Product data sheet All information provided in this document is subject to legal disclaimers. 28 June 2016 © Nexperia B.V. 2017. All rights reserved 7 / 21 PMCXB900UEL Nexperia 20 V, complementary N/P-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit TR1 (N-channel), Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS=VGS; Tj = 25 °C 0.45 0.7 0.95 V IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 5 V; VGS = 0 V; Tj = 25 °C - - 25 nA VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 1 µA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - -1 µA VGS = 1.8 V; VDS = 0 V; Tj = 25 °C - - 50 nA VGS = -1.8 V; VDS = 0 V; Tj = 25 °C - - -50 nA VGS = 4.5 V; ID = 600 mA; Tj = 25 °C - 470 620 mΩ VGS = 4.5 V; ID = 600 mA; Tj = 150 °C - 760 1000 mΩ VGS = 2.5 V; ID = 500 mA; Tj = 25 °C - 620 850 mΩ VGS = 1.8 V; ID = 100 mA; Tj = 25 °C - 845 1300 mΩ VGS = 1.5 V; ID = 10 mA; Tj = 25 °C - 1125 3000 mΩ VGS = 1.2 V; ID = 1 mA; Tj = 25 °C - 2210 - mΩ VDS = 5 V; ID = 600 mA; Tj = 25 °C - 1 - S IGSS RDSon gfs gate leakage current drain-source on-state resistance forward transconductance TR2 (P-channel), Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS=VGS; Tj = 25 °C -0.45 -0.7 -0.95 V IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA VDS = -5 V; VGS = 0 V; Tj = 25 °C - - -25 nA VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 1 µA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - -1 µA VGS = 1.8 V; VDS = 0 V; Tj = 25 °C - - 50 nA VGS = -1.8 V; VDS = 0 V; Tj = 25 °C - - -50 nA IGSS gate leakage current PMCXB900UEL Product data sheet All information provided in this document is subject to legal disclaimers. 28 June 2016 © Nexperia B.V. 2017. All rights reserved 8 / 21 PMCXB900UEL Nexperia 20 V, complementary N/P-channel Trench MOSFET Symbol Parameter Conditions Min Typ Max Unit RDSon drain-source on-state resistance VGS = -4.5 V; ID = -500 mA; Tj = 25 °C - 1.02 1.4 Ω VGS = -4.5 V; ID = -500 mA; Tj = 150 °C - 1.54 2.1 Ω VGS = -2.5 V; ID = -200 mA; Tj = 25 °C - 1.27 2.2 Ω VGS = -1.8 V; ID = -40 mA; Tj = 25 °C - 1.7 3.3 Ω VGS = -1.5 V; ID = -10 mA; Tj = 25 °C - 2.3 5 Ω VGS = -1.2 V; ID = -1 mA; Tj = 25 °C - 3.5 - Ω VDS = -10 V; ID = -500 mA; Tj = 25 °C - 480 - mS gfs forward transconductance TR1 (N-channel), Dynamic characteristics QG(tot) total gate charge VDS = 10 V; ID = 600 mA; VGS = 4.5 V; - 0.4 0.7 nC QGS gate-source charge Tj = 25 °C - 0.1 - nC QGD gate-drain charge - 0.1 - nC Ciss input capacitance VDS = 10 V; f = 1 MHz; VGS = 0 V; - 21.3 - pF Coss output capacitance Tj = 25 °C - 5.4 - pF Crss reverse transfer capacitance - 4.2 - pF td(on) turn-on delay time VDS = 10 V; ID = 600 mA; VGS = 4.5 V; - 5.6 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 9.2 - ns td(off) turn-off delay time - 19 - ns tf fall time - 51 - ns TR2 (P-channel), Dynamic characteristics QG(tot) total gate charge VDS = -10 V; ID = -450 mA; - 1.19 2.1 nC QGS gate-source charge VGS = -4.5 V; Tj = 25 °C - 0.17 - nC QGD gate-drain charge - 0.1 - nC Ciss input capacitance VDS = -10 V; f = 1 MHz; VGS = 0 V; - 43 - pF Coss output capacitance Tj = 25 °C - 14 - pF Crss reverse transfer capacitance - 8 - pF td(on) turn-on delay time VDS = -10 V; ID = -450 mA; - 2.3 - ns tr rise time VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C - 5 - ns td(off) turn-off delay time - 13.5 - ns tf fall time - 6 - ns - 0.8 1.2 V - -0.7 -1.2 V TR1 (N-channel), Source-drain diode characteristics VSD source-drain voltage IS = 360 mA; VGS = 0 V; Tj = 25 °C TR2 (P-channel), Source-drain diode characteristics VSD source-drain voltage PMCXB900UEL Product data sheet IS = -115 mA; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 28 June 2016 © Nexperia B.V. 2017. All rights reserved 9 / 21 PMCXB900UEL Nexperia 20 V, complementary N/P-channel Trench MOSFET aaa-008998 2.5 ID (A) aaa-008999 10-3 4.5 V ID (A) 2.0 2.5 V 10-4 1.5 min 1.0 1.8 V 0.5 typ max 10-5 1.5 V VGS = 1.2 V 0 Fig. 8. 0 1 2 3 10-6 4 VDS (V) 0 0.5 1.0 VGS (V) 1.5 Tj = 25 °C Tj = 25 °C; VDS = 5 V TR1: output characteristics; drain current as a Fig. 9. function of drain-source voltage; typical values TR1: sub-threshold drain current as a function of gate-source voltage aaa-009000 3 RDSon (Ω) 1.5 V 1.2 V 1.8 V aaa-009001 3 2V RDSon (Ω) 2.5 V 2 2 3V 1 1 Tj = 150 °C VGS = 4.5 V 0 0 0.5 1.0 1.5 2.0 ID (A) Tj = 25 °C 0 2.5 Tj = 25 °C Product data sheet 1 2 3 4 VGS (V) 5 ID = 0.6 A Fig. 10. TR1: drain-source on-state resistance as a function of drain current; typical values PMCXB900UEL 0 Fig. 11. TR1: drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 28 June 2016 © Nexperia B.V. 2017. All rights reserved 10 / 21 PMCXB900UEL Nexperia 20 V, complementary N/P-channel Trench MOSFET aaa-009002 2.5 aaa-009003 2.0 ID (A) a 2.0 1.5 1.5 1.0 1.0 Tj = 150 °C 0.5 0 0 1 Tj = 25 °C 2 0.5 3 4 VGS (V) 0 -60 5 VDS > ID × RDSon Fig. 12. TR1: transfer characteristics; drain current as a function of gate-source voltage; typical values VGS(th) (V) 60 120 Tj (°C) 180 Fig. 13. TR1: normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-009004 1.5 0 aaa-009005 102 C (pF) 1.0 Ciss 10 max Coss 0.5 typ Crss min 0 -60 0 60 120 Tj (°C) 1 10-1 180 ID = 0.25 mA; VDS = VGS Product data sheet 10 VDS (V) 102 f = 1 MHz; VGS = 0 V Fig. 14. TR1: gate-source threshold voltage as a function of junction temperature PMCXB900UEL 1 Fig. 15. TR1: input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 28 June 2016 © Nexperia B.V. 2017. All rights reserved 11 / 21 PMCXB900UEL Nexperia 20 V, complementary N/P-channel Trench MOSFET aaa-009006 5 VDS VGS (V) ID 4 VGS(pl) 3 VGS(th) VGS 2 QGS1 QGS2 QGS 1 QGD QG(tot) 017aaa137 0 0 0.1 0.2 0.3 Fig. 17. Gate charge waveform definitions 0.4 0.5 QG (nC) ID = 0.6 A; VDS = 10 V; Tamb = 25 °C Fig. 16. TR1: gate-source voltage as a function of gate charge; typical values aaa-009007 2.5 aaa-006904 -2.0 IS (A) VGS = -4.5 V ID (A) 2.0 -3.5 V -1.5 -3 V 1.5 -1.0 -2.5 V -0.5 -1.8 V 1.0 0.5 Tj = 150 °C Tj = 25 °C -1.2 V 0 0 0.4 0.8 1.2 0.0 1.6 2.0 VSD (V) VGS = 0 V Product data sheet -1 -2 -3 VDS (V) -4 Tj = 25 °C Fig. 18. TR1: source current as a function of sourcedrain voltage; typical values PMCXB900UEL 0 Fig. 19. TR2: output characteristics; drain current as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 28 June 2016 © Nexperia B.V. 2017. All rights reserved 12 / 21 PMCXB900UEL Nexperia 20 V, complementary N/P-channel Trench MOSFET aaa-006905 -10-2 aaa-006906 2.0 ID (A) RDSon (Ω) -10-3 -1.8 V -2.2 V -2.5 V 1.5 min typ -3 V max -3.5 V -10-4 1.0 VGS = -4.5 V -10-5 0.5 -10-6 0.0 -0.5 -1.0 VGS (V) 0.0 0.0 -1.5 Tj = 25 °C; VDS = -5 V -0.5 -1.0 -1.5 ID (V) -2.0 Tj = 25 °C Fig. 20. TR2: sub-threshold drain current as a function of gate-source voltage aaa-006907 5 Fig. 21. TR2: drain-source on-state resistance as a function of drain current; typical values aaa-006908 -1.00 RDSon (Ω) ID (A) 4 Tj = 25 °C -0.75 Tj = 150 °C 3 -0.50 2 Tj = 150 °C -0.25 1 0 Tj = 25 °C 0 -1 -2 -3 -4 VGS (V) 0.00 -5 ID = -0.5 A Product data sheet -1 -2 -3 VGS (V) -4 VDS > ID × RDSon Fig. 22. TR2: drain-source on-state resistance as a function of gate-source voltage; typical values PMCXB900UEL 0 Fig. 23. TR2: transfer characteristics; drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 28 June 2016 © Nexperia B.V. 2017. All rights reserved 13 / 21 PMCXB900UEL Nexperia 20 V, complementary N/P-channel Trench MOSFET aaa-006909 1.50 a aaa-006910 -1.5 VGS(th) (V) 1.25 -1.0 max 1.00 typ -0.5 0.75 0.50 -60 min 0 60 120 Tj (°C) 0.0 -60 180 Fig. 24. TR2: normalized drain-source on-state resistance as a function of junction temperature; typical values 60 120 Tj (°C) 180 ID = -0.25 mA; VDS = VGS Fig. 25. TR2: gate-source threshold voltage as a function of junction temperature aaa-006911 102 0 aaa-006912 -5 VGS (V) Ciss -4 C (pF) Coss -3 10 Crss -2 -1 1 -10-1 -1 -10 VDS (V) 0 -102 Fig. 26. TR2: input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Product data sheet 0.2 0.4 QG (nC) 0.6 ID = -0.45 A; VDS = -10 V; Tamb = 25 °C f = 1 MHz; VGS = 0 V PMCXB900UEL 0 Fig. 27. TR2: gate-source voltage as a function of gate charge; typical values All information provided in this document is subject to legal disclaimers. 28 June 2016 © Nexperia B.V. 2017. All rights reserved 14 / 21 PMCXB900UEL Nexperia 20 V, complementary N/P-channel Trench MOSFET aaa-006913 -2.0 VDS IS (A) ID -1.5 VGS(pl) VGS(th) -1.0 VGS QGS1 QGS2 QGS Tj = 150 °C -0.5 QGD Tj = 25 °C QG(tot) 017aaa137 0.0 0.0 Fig. 28. MOSFET transistor: Gate charge waveform definitions -0.5 -1.0 -1.5 VSD (V) -2.0 VGS = 0 V Fig. 29. TR2: source current as a function of sourcedrain voltage; typical values 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 30. Duty cycle definition PMCXB900UEL Product data sheet All information provided in this document is subject to legal disclaimers. 28 June 2016 © Nexperia B.V. 2017. All rights reserved 15 / 21 PMCXB900UEL Nexperia 20 V, complementary N/P-channel Trench MOSFET 12. Package outline DFN1010B-6: plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body: 1.1 x 1.0 x 0.37 mm pin 1 index area SOT1216 visible depend upon used manufacturing technology (6x) e e b (6x) 1 2 3 L (6x) E1 (2x) E D 6 A1 e1 A 0 A A1 b D D1 4 D1 (2x) e1 1 mm scale Dimensions (mm are the original dimensions) Unit 5 E E1 e e1 L min 0.34 0.15 1.05 0.32 0.95 0.22 0.125 nom 0.37 0.18 1.10 0.35 1.00 0.25 0.35 0.275 0.155 max 0.40 0.04 0.23 1.15 0.40 1.05 0.30 0.205 mm Note 1. Dimension A is including plating thickness. Outline version sot1216_po References IEC JEDEC JEITA European projection Issue date 13-03-05 13-03-06 SOT1216 Fig. 31. Package outline DFN1010B-6 (SOT1216) PMCXB900UEL Product data sheet All information provided in this document is subject to legal disclaimers. 28 June 2016 © Nexperia B.V. 2017. All rights reserved 16 / 21 PMCXB900UEL Nexperia 20 V, complementary N/P-channel Trench MOSFET 13. Soldering Footprint information for reflow soldering of DFN1010B-6 package SOT1216 0.9 0.35 0.35 0.15 0.2 (6x) 0.15 1.3 1.2 0.35 0.25 0.5 0.6 0.35 0.25 1.1 0.3 (6x) 1 1.35 solder land solder land plus solder paste occupied area solder resist Dimensions in mm Issue date 13-03-06 14-07-28 sot1216_fr Fig. 32. Reflow soldering footprint for DFN1010B-6 (SOT1216) PMCXB900UEL Product data sheet All information provided in this document is subject to legal disclaimers. 28 June 2016 © Nexperia B.V. 2017. All rights reserved 17 / 21 PMCXB900UEL Nexperia 20 V, complementary N/P-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMCXB900UEL v.1 20160628 Product data sheet - - PMCXB900UEL Product data sheet All information provided in this document is subject to legal disclaimers. 28 June 2016 © Nexperia B.V. 2017. All rights reserved 18 / 21 PMCXB900UEL Nexperia 20 V, complementary N/P-channel Trench MOSFET In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. 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Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 28 June 2016 © Nexperia B.V. 2017. All rights reserved 19 / 21 PMCXB900UEL Nexperia 20 V, complementary N/P-channel Trench MOSFET grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific Nexperia product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Nexperia accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. PMCXB900UEL Product data sheet All information provided in this document is subject to legal disclaimers. 28 June 2016 © Nexperia B.V. 2017. All rights reserved 20 / 21 PMCXB900UEL Nexperia 20 V, complementary N/P-channel Trench MOSFET 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................4 9 Thermal characteristics .........................................6 10 Characteristics ....................................................... 8 11 Test information ................................................... 15 12 Package outline ................................................... 16 13 Soldering .............................................................. 17 14 Revision history ................................................... 18 15 15.1 15.2 15.3 15.4 Legal information .................................................19 Data sheet status ............................................... 19 Definitions ...........................................................19 Disclaimers .........................................................19 Trademarks ........................................................ 20 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 28 June 2016 PMCXB900UEL Product data sheet All information provided in this document is subject to legal disclaimers. 28 June 2016 © Nexperia B.V. 2017. All rights reserved 21 / 21