NX1029X,115

NX1029X 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  Very fast switching  ESD protection up to 2 kV (N-channel) and 1 kV (P-channel)  Trench MOSFET technology  AEC-Q101 qualified 1.3 Applications  Level shifter  Load switch  Power supply converter  Switching circuits 1.4 Quick reference data Table 1. Symbol Quick reference data Parameter Conditions Min Typ Max Unit Tj = 25 °C - - -50 V -20 - 20 V - - -170 mA - - 60 V -20 - 20 V - - 330 mA - 1 1.6 Ω - 4.5 7.5 Ω TR2 (P-channel) VDS drain-source voltage VGS gate-source voltage drain current ID VGS = -10 V; Tamb = 25 °C [1] TR1 (N-channel) VDS drain-source voltage VGS gate-source voltage drain current ID Tj = 25 °C VGS = 10 V; Tamb = 25 °C [1] TR1 (N-channel), Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 25 °C TR2 (P-channel), Static characteristics RDSon [1] drain-source on-state resistance VGS = -10 V; ID = -100 mA; Tj = 25 °C Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2. NX1029X Nexperia 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 Simplified outline 6 5 Graphic symbol D2 D1 4 G1 1 2 G2 3 SOT666 (SOT666) S1 S2 017aaa262 3. Ordering information Table 3. Ordering information Type number NX1029X Package Name Description Version SOT666 plastic surface-mounted package; 6 leads SOT666 4. Marking Table 4. Marking codes Type number Marking code[1] NX1029X AD [1] % = placeholder for manufacturing site code. NX1029X Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © Nexperia B.V. 2017. All rights reserved 2 of 20 NX1029X Nexperia 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Tj = 25 °C - -50 V TR2 (P-channel) VDS drain-source voltage VGS gate-source voltage ID drain current total power dissipation Ptot 20 V [1] - -170 mA VGS = -10 V; Tamb = 100 °C [1] - -110 mA Tamb = 25 °C; single pulse; tp ≤ 10 µs peak drain current IDM -20 VGS = -10 V; Tamb = 25 °C Tamb = 25 °C - -0.7 A [2] - 330 mW [1] - 390 mW - 1090 mW Tsp = 25 °C TR1 (N-channel) VDS drain-source voltage VGS gate-source voltage ID drain current Tj = 25 °C - 60 V -20 20 V VGS = 10 V; Tamb = 25 °C [1] - 330 mA VGS = 10 V; Tamb = 100 °C [1] - 210 mA - 1.2 A [2] - 330 mW [1] - 390 mW - 1090 mW - 500 mW IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Per device Tamb = 25 °C [2] Ptot total power dissipation Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C TR1 (N-channel), Source-drain diode source current IS Tamb = 25 °C [2][1] - 330 mA Tamb = 25 °C [1] - -170 mA HBM [3] - 2000 V HBM [3] - 1000 V TR2 (P-channel), Source-drain diode source current IS TR1 N-channel), ESD maximum rating VESD electrostatic discharge voltage TR2 (P-channel), ESD maximum rating VESD electrostatic discharge voltage [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint. [3] Measured between all pins. NX1029X Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © Nexperia B.V. 2017. All rights reserved 3 of 20 NX1029X Nexperia 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 001aao121 120 Pder (%) 001aao122 120 Ider (%) 80 80 40 40 0 -75 Fig 1. -25 25 75 125 Tj (°C) 0 -75 175 Normalized total power dissipation as a function of junction temperature Fig 2. -25 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature 017aaa059 10 ID (A) Limit RDSon = VDS/ID 1 (1) (2) 10−1 (3) (4) (5) 10−2 (6) 10−3 10−1 1 102 10 VDS (V) IDM = single pulse (1) tp = 100 μs (2) tp = 1 ms (3) tp = 10 ms (4) DC; Tsp = 25 °C (5) tp = 100 ms (6) DC; Tamb = 25 °C; drain mounting pad 1 cm2 Fig 3. Safe operating area TR1 (N-channel); junction to ambient; continuous and peak drain currents as a function of drain-source voltage NX1029X Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © Nexperia B.V. 2017. All rights reserved 4 of 20 NX1029X Nexperia 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 001aao140 -1 ID (A) (1) -10-1 (2) (3) (4) -10-2 (5) -10-3 -10-1 -1 -10 -102 VDS (V) IDM is single pulse (1) tp = 1 ms (2) tp = 10 ms (3) DC; Tsp = 25 °C (4) tp = 100 ms (5) DC; Tamb = 25 °C; drain mounting pad 1 cm2 Fig 4. Safe operating area TR2 (P-channel); junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Symbol Thermal characteristics Parameter Conditions thermal resistance from junction to ambient in free air in free air Min Typ Max Unit [1] - - 250 K/W [1] - 330 380 K/W [2] - 280 320 K/W - - 115 K/W [1] - 330 380 K/W [2] - 280 320 K/W - - 115 K/W Per device Rth(j-a) TR1 (N-channel) Rth(j-a) Rth(j-sp) thermal resistance from junction to ambient thermal resistance from junction to solder point TR2 (P-channel) Rth(j-a) Rth(j-sp) thermal resistance from junction to ambient in free air thermal resistance from junction to solder point [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2. NX1029X Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © Nexperia B.V. 2017. All rights reserved 5 of 20 NX1029X Nexperia 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 017aaa064 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 102 0.33 0.25 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 5. TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa065 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 1 cm2 Fig 6. TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values NX1029X Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © Nexperia B.V. 2017. All rights reserved 6 of 20 NX1029X Nexperia 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 017aaa064 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 102 0.33 0.25 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 7. TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa065 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 1 cm2 Fig 8. TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values NX1029X Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © Nexperia B.V. 2017. All rights reserved 7 of 20 NX1029X Nexperia 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit TR2 (P-channel), Static characteristics V(BR)DSS drain-source breakdown voltage ID = -10 µA; VGS = 0 V; Tj = 25 °C -50 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -1.1 -1.6 -2.1 V IDSS drain leakage current VDS = -50 V; VGS = 0 V; Tj = 25 °C - - -1 µA VDS = -50 V; VGS = 0 V; Tj = 150 °C - - -2 µA IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = -10 V; ID = -100 mA; Tj = 25 °C - 4.5 7.5 Ω RDSon gfs drain-source on-state resistance transfer conductance VGS = -10 V; ID = -100 mA; Tj = 150 °C - 8 13.5 Ω VGS = -5 V; ID = -100 mA; Tj = 25 °C - 5.1 8.5 Ω VDS = -10 V; ID = -100 mA; Tj = 25 °C - 150 - mS TR1 (N-channel), Static characteristics V(BR)DSS drain-source breakdown voltage ID = 10 µA; VGS = 0 V; Tj = 25 °C 60 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 1.1 1.6 2.1 V IDSS drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 60 V; VGS = 0 V; Tj = 150 °C - - 10 µA VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = 10 V; ID = 500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 25 °C - 1 1.6 Ω VGS = 10 V; ID = 500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 150 °C - 2.25 3.6 Ω VGS = 5 V; ID = 50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 25 °C - 1.3 2 Ω VDS = 10 V; ID = 100 mA; Tj = 25 °C - 550 - mS - 0.26 0.35 nC - 0.12 - nC - 0.09 - nC - 24 36 pF - 4.5 - pF - 1.3 - pF - 13 26 ns IGSS RDSon gfs gate leakage current drain-source on-state resistance transfer conductance TR2 (P-channel), Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time VDS = -25 V; ID = -180 mA; VGS = -5 V; Tj = 25 °C VDS = -25 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = -30 V; RL = 250 Ω; VGS = -10 V; RG(ext) = 6 Ω; Tj = 25 °C tr rise time - 11 - ns td(off) turn-off delay time - 48 96 ns tf fall time - 25 - ns NX1029X Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © Nexperia B.V. 2017. All rights reserved 8 of 20 NX1029X Nexperia 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET Table 7. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit VDS = 30 V; ID = 300 mA; VGS = 4.5 V; Tj = 25 °C - 0.5 0.6 nC - 0.2 - nC - 0.1 - nC VDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C - 33 50 pF - 7 - pF - 4 - pF - 5 10 ns - 6 - ns TR1 (N-channel), Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 12 24 ns tf fall time - 7 - ns -0.48 -0.85 -1.2 V 0.47 0.75 1.1 V VDS = 50 V; RL = 250 Ω; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C TR2 (P-channel), Source-drain diode characteristics source-drain voltage VSD IS = -115 mA; VGS = 0 V; Tj = 25 °C TR1 (N-channel), Source-drain diode characteristics source-drain voltage VSD 0.7 VGS = 4.0 V ID (A) 0.6 IS = 115 mA; VGS = 0 V; Tj = 25 °C 017aaa039 017aaa040 10−3 3.5 V ID (A) 3.25 V 0.5 10−4 (1) 0.4 (2) (3) 3.0 V 0.3 10−5 2.75 V 0.2 2.5 V 0.1 0.0 0.0 1.0 2.0 3.0 4.0 10−6 0.0 1.0 2.0 3.0 VDS (V) VGS (V) Tj = 25 °C Tj = 25 °C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 9. TR1: Output characteristics: drain current as a function of drain-source voltage; typical values NX1029X Product data sheet Fig 10. TR1: Sub-threshold drain current as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © Nexperia B.V. 2017. All rights reserved 9 of 20 NX1029X Nexperia 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 017aaa041 6.0 RDSon (Ω) 017aaa042 6.0 RDSon (Ω) (1) 4.0 4.0 (2) (3) 2.0 (1) 2.0 (4) (2) (5) 0.0 0.0 0.2 0.4 0.6 0.8 0.0 0.0 1.0 2.0 4.0 6.0 8.0 10.0 VGS (V) ID (A) Tj = 25 °C ID = 500 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.01 (1) VGS = 3.25 V (1) Tj = 150 °C (2) VGS = 3.5 V (2) Tj = 25 °C (3) VGS = 4 V (4) VGS = 5 V (5) VGS = 10 V Fig 11. TR1: Drain-source on-state resistance as a function of drain current; typical values Fig 12. TR1: Drain-source on-state resistance as a function of gate-source voltage; typical values 017aaa043 1.0 ID (A) 017aaa298 2.4 a 0.8 (1) 1.8 (2) 0.6 1.2 0.4 0.6 0.2 0.0 0.0 1.0 2.0 3.0 4.0 5.0 VGS (V) 0.0 –60 0 60 120 Tj (°C) 180 VDS > ID x RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 13. TR1: Transfer characteristics: drain current as a function of gate-source voltage; typical values NX1029X Product data sheet Fig 14. TR1: Normalized drain-source on-state resistance as a function of junction temperature; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © Nexperia B.V. 2017. All rights reserved 10 of 20 NX1029X Nexperia 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 017aaa299 3.0 VGS(th) (V) 017aaa046 102 (1) C (pF) (1) 2.0 (2) (2) 10 (3) (3) 1.0 0.0 –60 0 60 120 Tj (°C) 180 1 10−1 1 VDS (V) ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (1) Ciss (2) typical values (2) Coss (3) minimum values (3) Crss Fig 15. TR1: Gate-source threshold voltage as a function of junction temperature 102 10 Fig 16. TR1: Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 017aaa047 5.0 VGS (V) VDS 4.0 ID 3.0 VGS(pl) VGS(th) 2.0 VGS QGS1 1.0 QGS2 QGS 0.0 0.0 0.2 0.4 0.6 QGD QG(tot) 003aaa508 0.8 QG (nC) ID = 300 mA; VDS = 30 V; Tamb = 25 °C Fig 17. TR1: Gate-source voltage as a function of gate charge; typical values NX1029X Product data sheet Fig 18. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © Nexperia B.V. 2017. All rights reserved 11 of 20 NX1029X Nexperia 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 017aaa048 1.2 001aao124 -0.20 VGS = -10 V -4.0 V -3.5 V ID (A) IS (A) -0.15 0.8 (1) -3.0 V (2) -0.10 0.4 -2.5 V -0.05 0.0 0.0 0.4 0.8 1.2 0 VSD (V) 0 -1 -2 -3 VDS (V) -4 Tj = 25 °C VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig 19. TR1: Source current as a function of source-drain voltage; typical values Fig 20. TR2: Output characteristics: drain current as a function of drain-source voltage; typical values 001aao125 -10-3 001aao126 12 (1) ID (A) (2) (3) RDSon (Ω) (2) (1) -10-4 (3) 8 (4) (5) -10-5 -10-6 4 0 -0.5 -1.0 -1.5 -2.0 -2.5 VGS (V) 0 0 -0.1 -0.2 -0.3 ID (A) -0.4 Tj = 25 °C Tj = 25 °C; VDS = -5 V (1) minimum values (1) VGS = -3.0 V (2) typical values (2) VGS = -3.5 V (3) maximum values (3) VGS = -4.0 V (4) VGS = -5.0 V (5) VGS = -10.0 V Fig 21. TR2: Sub-threshold drain current as a function of gate-source voltage NX1029X Product data sheet Fig 22. TR2: Drain-source on-state resistance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © Nexperia B.V. 2017. All rights reserved 12 of 20 NX1029X Nexperia 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 001aao127 14 001aao128 -0.20 ID (A) RDSon (Ω) (1) (2) -0.15 10 (1) -0.10 6 (2) -0.05 (2) (1) 2 0 -2 -4 -6 -8 0 -10 VGS (V) 0 -1 -2 ID = -200 mA VDS > ID x RDSon (1) Tj = 150 °C (1) Tj = 25 °C (2) Tj = 25 °C (2) Tj = 150 °C Fig 23. TR2: Drain-source on-state resistance as a function of gate-source voltage; typical values 001aao130 -3 VGS(th) (V) VGS (V) -4 Fig 24. TR2: Transfer characteristics: drain current as a function of gate-source voltage; typical values 001aao131 102 C (pF) -2 -3 (1) (1) (2) (2) -1 10 (3) (3) 0 -60 0 60 120 Tj (°C) 180 1 -10-1 -1 ID = -0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (1) Ciss (2) typical values (2) Coss (3) minimum values (3) Crss Fig 25. TR2: Gate-source threshold voltage as a function of junction temperature NX1029X Product data sheet -10 VDS (V) -102 Fig 26. TR2: Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © Nexperia B.V. 2017. All rights reserved 13 of 20 NX1029X Nexperia 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 001aao132 -10 001aao133 -0.3 VGS (V) IS (A) -8 -0.2 -6 -4 -0.1 (1) (2) -2 0 0 0.2 0.4 QG (nC) 0 0.6 ID = -180 mA; VDS = -25 V; Tamb = 25 °C 0 -0.4 -0.8 VSD (V) -1.2 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig 27. TR2: Gate-source voltage as a function of gate charge; typical values Fig 28. TR2: Source current as a function of source-drain voltage; typical values 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 29. Duty cycle definition 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. NX1029X Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © Nexperia B.V. 2017. All rights reserved 14 of 20 NX1029X Nexperia 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 SOT666 Fig 30. Package outline SOT666 (SOT666) NX1029X Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © Nexperia B.V. 2017. All rights reserved 15 of 20 NX1029X Nexperia 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 10. Soldering 2.75 2.45 2.1 1.6 solder lands 0.4 (6×) 0.25 (2×) 0.538 2 1.7 1.075 0.3 (2×) 0.55 (2×) placement area solder paste occupied area 0.325 0.375 (4×) (4×) Dimensions in mm 1.7 0.45 (4×) 0.6 (2×) 0.5 (4×) 0.65 (2×) sot666_fr Fig 31. Reflow soldering footprint for SOT666 (SOT666) NX1029X Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © Nexperia B.V. 2017. All rights reserved 16 of 20 NX1029X Nexperia 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes NX1029X v.1 20110812 Product data sheet - - NX1029X Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © Nexperia B.V. 2017. All rights reserved 17 of 20 NX1029X Nexperia 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 12.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Nexperia product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. NX1029X Product data sheet Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © Nexperia B.V. 2017. All rights reserved 18 of 20 NX1029X Nexperia 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 13. Contact information For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com NX1029X Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © Nexperia B.V. 2017. All rights reserved 19 of 20 Nexperia NX1029X 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 © Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .8 Test information . . . . . . . . . . . . . . . . . . . . . . . . .14 Quality information . . . . . . . . . . . . . . . . . . . . . .14 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .15 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .17 Legal information. . . . . . . . . . . . . . . . . . . . . . . .18 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .18 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .19 Contact information. . . . . . . . . . . . . . . . . . . . . .19 Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 12 August 2011