PHPT60610NYX

PHPT60610NY 60 V, 10 A NPN high power bipolar transistor 15 January 2019 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60610PY 2. Features and benefits • • • • • High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified. 3. Applications • • • • • • Power management Load switch Linear mode voltage regulator Backlighting applications Motor drive Relay replacement 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 60 V IC collector current - - 10 A ICM peak collector current single pulse; tp ≤ 1 ms - - 20 A RCEsat collector-emitter saturation resistance IC = 10 A; IB = 1 A; tp ≤ 300 µs; pulsed; δ ≤ 0.02; Tamb = 25 °C - 25 36 mΩ PHPT60610NY Nexperia 60 V, 10 A NPN high power bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 E emitter 2 E emitter 3 E emitter 4 B base mb C collector Simplified outline Graphic symbol C mb B E 1 2 3 4 sym123 LFPAK56; PowerSO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package PHPT60610NY Name Description Version LFPAK56; Power-SO8 Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads SOT669 7. Marking Table 4. Marking codes Type number Marking code PHPT60610NY 0610NAB PHPT60610NY Product data sheet All information provided in this document is subject to legal disclaimers. 15 January 2019 © Nexperia B.V. 2019. All rights reserved 2 / 13 PHPT60610NY Nexperia 60 V, 10 A NPN high power bipolar transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 60 V VCEO collector-emitter voltage open base - 60 V VEBO emitter-base voltage open collector - 7 V IC collector current - 10 A ICM peak collector current - 20 A IB base current - 1.5 A IBM peak base current single pulse; tp ≤ 1 ms - 2 A Ptot total power dissipation Tamb ≤ 25 °C [1] - 1.5 W [2] - 3.7 W [3] - 5 W [4] - 25 W single pulse; tp ≤ 1 ms Tj junction temperature - 175 °C Tamb ambient temperature -55 175 °C Tstg storage temperature -65 175 °C [1] [2] [3] [4] Device mounted on an FR4 Printed-Circuit Board (PCB); single-sided copper; tin-plated and standard footprint. 2 Device mounted on an FR4 PCB; single-sided copper; tin-plated and mounting pad for collector 6 cm . Device mounted on a ceramic PCB; Al2O3, standard footprint. Power dissipation from junction to mounting base. aaa-016569 6 (1) Ptot (W) 4 (2) 2 (3) 0 -75 25 125 Tamb (°C) 225 (1) Ceramic PCB, Al2O3, standard footprint 2 (2) FR4 PCB, mounting pad for collector 6 cm (3) FR4 PCB, standard footprint Fig. 1. Power derating curves PHPT60610NY Product data sheet All information provided in this document is subject to legal disclaimers. 15 January 2019 © Nexperia B.V. 2019. All rights reserved 3 / 13 PHPT60610NY Nexperia 60 V, 10 A NPN high power bipolar transistor 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) thermal resistance from in free air junction to ambient Rth(j-mb) [1] [2] [3] Conditions Min Typ Max Unit [1] - - 100 K/W [2] - - 41 K/W [3] - - 30 K/W - - 6 K/W thermal resistance from junction to mounting base Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm . Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. aaa-016570 103 Zth(j-a) (K/W) 102 10 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 1 10-1 10-5 0.01 0 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-016571 102 duty cycle = 1 Zth(j-a) (K/W) 0.75 10 0.5 0.33 0.2 0.1 0.05 1 0.02 0.01 0 10-1 10-5 10-4 10-3 10-2 FR4 PCB, mounting pad for collector 6 cm Fig. 3. 10-1 1 10 102 2 tp (s) 103 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PHPT60610NY Product data sheet All information provided in this document is subject to legal disclaimers. 15 January 2019 © Nexperia B.V. 2019. All rights reserved 4 / 13 PHPT60610NY Nexperia 60 V, 10 A NPN high power bipolar transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO VCB = 48 V; IE = 0 A; Tamb = 25 °C - - 100 nA VCB = 48 V; IE = 0 A; Tj = 150 °C - - 50 µA collector-base cut-off current ICES collector-emitter cut-off VCE = 48 V; VBE = 0 V; Tamb = 25 °C current - - 100 nA IEBO emitter-base cut-off current VEB = 7 V; IC = 0 A; Tamb = 25 °C - - 100 nA hFE DC current gain VCE = 2 V; IC = 500 mA; Tamb = 25 °C 240 410 - VCE = 2 V; IC = 1 A; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 210 400 - VCE = 2 V; IC = 5 A; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 100 200 - VCE = 2 V; IC = 10 A; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C; pulsed 50 100 - IC = 1 A; IB = 50 mA; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C; pulsed - 30 40 mV IC = 5 A; IB = 500 mA; tp ≤ 300 µs; pulsed; δ ≤ 0.02; Tamb = 25 °C - 115 160 mV IC = 10 A; IB = 1 A; tp ≤ 300 µs; pulsed; δ ≤ 0.02; Tamb = 25 °C - 250 360 mV - 25 36 mΩ - - 0.95 V IC = 5 A; IB = 500 mA; tp ≤ 300 µs; pulsed; δ ≤ 0.02; Tamb = 25 °C - - 1.2 V IC = 10 A; IB = 1 A; tp ≤ 300 µs; pulsed; δ ≤ 0.02; Tamb = 25 °C - - 1.4 V VCEsat collector-emitter saturation voltage RCEsat collector-emitter saturation resistance VBEsat base-emitter saturation IC = 1 A; IB = 50 mA; tp ≤ 300 µs; pulsed; δ ≤ 0.02; Tamb = 25 °C voltage VBEon base-emitter turn-on voltage VCE = 2 V; IC = 500 mA; Tamb = 25 °C - - 0.8 V td delay time - 20 - ns tr rise time VCC = 12.5 V; IC = 5 A; IBon = 250 mA; IBoff = -250 mA; Tamb = 25 °C - 180 - ns ton turn-on time - 200 - ns ts storage time - 340 - ns tf fall time - 165 - ns toff turn-off time - 505 - ns fT transition frequency VCE = 10 V; IC = 500 mA; f = 100 MHz; Tamb = 25 °C - 140 - MHz Cc collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C - 50 - pF PHPT60610NY Product data sheet All information provided in this document is subject to legal disclaimers. 15 January 2019 © Nexperia B.V. 2019. All rights reserved 5 / 13 PHPT60610NY Nexperia 60 V, 10 A NPN high power bipolar transistor aaa-016633 600 (1) hFE IB = 120 mA 95 mA IC (A) 70 mA (2) 400 aaa-016634 12 8 50 mA 35 mA 25 mA (3) 20 mA 200 15 mA 4 10 mA 5 mA 0 10-1 1 10 102 0 103 104 IC (mA) VCE = 2 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 4. 0 1 2 3 4 VCE (V) 5 Tamb = 25 °C Fig. 5. Collector current as a function of collectoremitter voltage; typical values DC current gain as a function of collector current; typical values aaa-016635 1.2 VBEsat (V) VBE (V) 1.0 1.0 0.8 (1) 0.8 0.6 (2) 0.6 (3) 0.4 0.2 10-1 1 10 102 0.2 10-1 103 104 IC (mA) Product data sheet (2) (3) 1 10 102 103 104 IC (mA) IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Base-emitter voltage as a function of collector current; typical values PHPT60610NY (1) 0.4 VCE = 2 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig. 6. aaa-016636 1.2 Fig. 7. Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 15 January 2019 © Nexperia B.V. 2019. All rights reserved 6 / 13 PHPT60610NY Nexperia 60 V, 10 A NPN high power bipolar transistor aaa-016637 1 aaa-016638 1 VCEsat (V) VCEsat (V) 10-1 10-1 (1) (1) (2) 10-2 (2) 10-2 (3) (3) (4) 10-3 10-1 1 10 102 10-3 10-1 103 104 IC (mA) IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 8. Collector-emitter saturation voltage as a function of collector current; typical values aaa-016639 103 1 10 102 103 104 IC (mA) Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 20 (4) IC/IB = 10 Fig. 9. Collector-emitter saturation voltage as a function of collector current; typical values aaa-016640 103 RCEsat (Ω) RCEsat (Ω) 102 102 10 10 1 1 (1) (2) (3) 10-1 10-1 (1) (2) (4) (3) 10-2 10-1 1 10 102 10-2 10-1 103 104 IC (mA) IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 10. Collector-emitter saturation resistance as a function of collector current; typical values PHPT60610NY Product data sheet 1 10 102 103 104 IC (mA) Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 20 (4) IC/IB = 10 Fig. 11. Collector-emitter saturation resistance as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 15 January 2019 © Nexperia B.V. 2019. All rights reserved 7 / 13 PHPT60610NY Nexperia 60 V, 10 A NPN high power bipolar transistor 11. Test information IB input pulse (idealized waveform) 90 % IBon (100 %) 10 % IBoff output pulse (idealized waveform) IC 90 % IC (100 %) 10 % t td ts tr ton tf toff 006aaa003 Fig. 12. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 VI oscilloscope DUT R1 mlb826 Fig. 13. Test circuit for switching times Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PHPT60610NY Product data sheet All information provided in this document is subject to legal disclaimers. 15 January 2019 © Nexperia B.V. 2019. All rights reserved 8 / 13 PHPT60610NY Nexperia 60 V, 10 A NPN high power bipolar transistor 12. Package outline Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads E A2 A SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w b A X c 1/2 e A (A3) A1 C q L detail X 0 y C θ 5 mm 8° scale 0° Dimensions (mm are the original dimensions) Unit(1) A A1 A2 A3 b b2 max 1.20 0.15 1.10 0.50 4.41 nom 0.25 min 1.01 0.00 0.95 0.35 3.62 mm c c2 D(1) D1(1) E(1) E1(1) b3 b4 2.2 0.9 0.25 0.30 4.10 4.20 5.0 3.3 2.0 0.7 0.19 0.24 3.80 4.8 3.1 e 1.27 H L L1 L2 6.2 0.85 1.3 1.3 5.8 0.40 0.8 0.8 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. Outline version SOT669 References IEC JEDEC JEITA w y 0.25 0.1 sot669_po European projection Issue date 11-03-25 13-02-27 MO-235 Fig. 14. Package outline LFPAK56; Power-SO8 (SOT669) PHPT60610NY Product data sheet All information provided in this document is subject to legal disclaimers. 15 January 2019 © Nexperia B.V. 2019. All rights reserved 9 / 13 PHPT60610NY Nexperia 60 V, 10 A NPN high power bipolar transistor 13. Soldering Footprint information for reflow soldering SOT669 4.7 4.2 0.9 (3×) 0.25 (2×) 0.25 (2×) 0.6 (4×) 3.45 0.6 (3×) 2 3.5 2.55 0.25 (2×) SR opening = Cu + 0.075 1.1 2.15 3.3 SP opening = Cu - 0.050 0.7 (4×) 1.27 3.81 solder lands solder paste 125 µm stencil solder resist occupied area Dimensions in mm sot669_fr Fig. 15. Reflow soldering footprint for LFPAK56; Power-SO8 (SOT669) PHPT60610NY Product data sheet All information provided in this document is subject to legal disclaimers. 15 January 2019 © Nexperia B.V. 2019. All rights reserved 10 / 13 PHPT60610NY Nexperia 60 V, 10 A NPN high power bipolar transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PHPT60610NY v.2 20190115 Product data sheet - PHPT60610NY v.1 Modifications: • PHPT60610NY v.1 20150527 PHPT60610NY Product data sheet Typo at figures 2 and 3: unit corrected from ns to s at x-scale Product data sheet - All information provided in this document is subject to legal disclaimers. 15 January 2019 - © Nexperia B.V. 2019. All rights reserved 11 / 13 PHPT60610NY Nexperia 60 V, 10 A NPN high power bipolar transistor equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. 15. Legal information Data sheet status Document status [1][2] Product status [3] Definition Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. 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Nexperia takes no responsibility for the content in this document if provided by an information source outside of Nexperia. In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). 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Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or PHPT60610NY Product data sheet All information provided in this document is subject to legal disclaimers. 15 January 2019 © Nexperia B.V. 2019. All rights reserved 12 / 13 PHPT60610NY Nexperia 60 V, 10 A NPN high power bipolar transistor Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 4 10. Characteristics............................................................ 5 11. Test information.......................................................... 8 12. Package outline.......................................................... 9 13. Soldering................................................................... 10 14. Revision history........................................................11 15. Legal information......................................................12 © Nexperia B.V. 2019. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 15 January 2019 PHPT60610NY Product data sheet All information provided in this document is subject to legal disclaimers. 15 January 2019 © Nexperia B.V. 2019. All rights reserved 13 / 13