PUMD17,115

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia PEMD17; PUMD17 NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ Rev. 03 — 24 January 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP resistor-equipped transistors. Table 1: Product overview Type number Package PNP/PNP complement NPN/NPN complement Philips JEITA PEMD17 SOT666 - PEMB17 PEMH17 PUMD17 SOT363 SC-88 PUMB17 PUMH17 1.2 Features ■ ■ ■ ■ Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place cost 1.3 Applications ■ Low current peripheral driver ■ Control of IC inputs ■ Replacement of general-purpose transistors in digital applications 1.4 Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 50 V IO output current (DC) - - 100 mA R1 bias resistor 1 (input) 33 47 61 kΩ R2/R1 bias resistor ratio 0.37 0.47 0.57 PEMD17; PUMD17 Philips Semiconductors NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ 2. Pinning information Table 3: Pinning Pin Description Simplified outline 1 GND (emitter) TR1 2 input (base) TR1 3 output (collector) TR2 4 GND (emitter) TR2 5 input (base) TR2 6 output (collector) TR1 6 5 4 Symbol 6 5 R1 4 R2 TR2 1 2 3 TR1 001aab555 R2 1 R1 2 3 006aaa143 3. Ordering information Table 4: Ordering information Type number Package Name Description Version PEMD17 - plastic surface mounted package; 6 leads SOT666 PUMD17 SC-88 plastic surface mounted package; 6 leads SOT363 4. Marking Table 5: Marking codes Type number Marking code [1] PEMD17 5N PUMD17 D9* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 9397 750 14367 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 03 — 24 January 2005 2 of 12 PEMD17; PUMD17 Philips Semiconductors NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ 5. Limiting values Table 6: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 10 V VI input voltage TR1 positive - +40 V negative - −10 V positive - +10 V negative input voltage TR2 VI - −40 V IO output current (DC) - 100 mA ICM peak collector current - 100 mA Ptot total power dissipation Tamb ≤ 25 °C SOT363 [1] - 200 mW SOT666 [1] [2] - 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Per device Ptot total power dissipation Tamb ≤ 25 °C SOT363 [1] - 300 mW SOT666 [1] [2] - 300 mW [1] Device mounted on a FR4 printed-circuit board, single-sided copper, standard footprint. [2] Reflow soldering is the only recommended soldering method. 9397 750 14367 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 03 — 24 January 2005 3 of 12 PEMD17; PUMD17 Philips Semiconductors NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ 6. Thermal characteristics Table 7: Symbol Thermal characteristics Parameter Conditions Min Typ Max Unit Per transistor Rth(j-a) thermal resistance from junction to ambient Tamb ≤ 25 °C SOT363 [1] - - 625 K/W SOT666 [1] [2] - - 625 K/W SOT363 [1] - - 416 K/W SOT666 [1] [2] - - 416 K/W Per device Rth(j-a) thermal resistance from junction to ambient Tamb ≤ 25 °C [1] Device mounted on a FR4 printed-circuit board, single-sided copper, standard footprint. [2] Reflow soldering is the only recommended soldering method. 7. Characteristics Table 8: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit - - 100 nA Per transistor; for the PNP transistor with negative polarity ICBO collector-base cut-off current ICEO collector-emitter cut-off current VCB = 50 V; IE = 0 A VCE = 30 V; IB = 0 A - - 1 µA VCE = 30 V; IB = 0 A; Tj = 150 °C - - 50 µA µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 110 hFE DC current gain VCE = 5 V; IC = 5 mA 60 - - VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - 150 mV VI(off) off-state input voltage VCE = 5 V; IC = 100 µA - 1.7 1.2 V VI(on) on-state input voltage VCE = 0.3 V; IC = 2 mA 4 2.7 - V R1 bias resistor 1 (input) 33 47 61 kΩ R2/R1 bias resistor ratio 0.37 0.47 0.57 Cc collector capacitance TR1 (NPN) - - 2.5 pF TR2 (PNP) - - 3 pF VCB = −10 V; IE = ie = 0 A; f = 1 MHz 9397 750 14367 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 03 — 24 January 2005 4 of 12 PEMD17; PUMD17 Philips Semiconductors NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ 006aaa184 103 (2) hFE 006aaa185 102 (1) VCEsat (mV) (3) (1) 102 (2) (3) 10 1 10−1 1 102 10 10 10−1 1 102 10 I C (mA) I C (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 100 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −40 °C (3) Tamb = −40 °C Fig 1. TR1 (NPN): DC current gain as a function of collector current; typical values 006aaa186 102 VI(on) (V) Fig 2. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values VI(off) (V) 10 (2) 006aaa187 10 (1) (1) (2) 1 (3) (3) 1 10−1 10−1 1 102 10 10−1 10−2 IC (mA) 1 10 I C (mA) VCE = 0.3 V VCE = 5 V (1) Tamb = −40 °C (1) Tamb = −40 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Fig 3. TR1 (NPN): On-state input voltage as a function of collector current; typical values Fig 4. TR1 (NPN): Off-state input voltage as a function of collector current; typical values 9397 750 14367 Product data sheet 10−1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 03 — 24 January 2005 5 of 12 PEMD17; PUMD17 Philips Semiconductors NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ 006aaa208 103 006aaa209 −102 hFE (1) 102 (2) VCEsat (mV) (1) (2) (3) (3) 10 1 −10−1 −1 −10 −102 −10 −10−1 −1 −10 IC (mA) −102 IC (mA) VCE = −5 V IC/IB = 20 (1) Tamb = 100 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −40 °C (3) Tamb = −40 °C Fig 5. TR2 (PNP): DC current gain as a function of collector current; typical values 006aaa210 −102 VI(on) (V) Fig 6. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values 006aaa211 −10 VI(off) (V) −10 (1) (1) (2) (2) (3) (3) −1 −1 −10−1 −10−1 −1 −10 −102 −10−1 −10−2 −10−1 IC (mA) −10 IC (mA) VCE = −0.3 V VCE = −5 V (1) Tamb = −40 °C (1) Tamb = −40 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Fig 7. TR2 (PNP): On-state input voltage as a function of collector current; typical values Fig 8. TR2 (PNP): Off-state input voltage as a function of collector current; typical values 9397 750 14367 Product data sheet −1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 03 — 24 January 2005 6 of 12 PEMD17; PUMD17 Philips Semiconductors NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ 8. Package outline Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 c bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC SOT363 JEDEC JEITA SC-88 EUROPEAN PROJECTION ISSUE DATE 97-02-28 04-11-08 Fig 9. Package outline SOT363 (SC-88) 9397 750 14367 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 03 — 24 January 2005 7 of 12 PEMD17; PUMD17 Philips Semiconductors NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ Plastic surface mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 01-08-27 04-11-08 SOT666 Fig 10. Package outline SOT666 9397 750 14367 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 03 — 24 January 2005 8 of 12 PEMD17; PUMD17 Philips Semiconductors NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ 9. Packing information Table 9: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package [1] Description Packing quantity 3000 4000 10000 PEMD17 SOT666 4 mm pitch, 8 mm tape and reel - -115 - PUMD17 SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - -135 PUMD17 SOT363 4 mm pitch, 8 mm tape and reel; T2 [3] -125 - -165 [1] For further information and the availability of packing methods, see Section 14. [2] T1: normal taping [3] T2: reverse taping 9397 750 14367 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 03 — 24 January 2005 9 of 12 PEMD17; PUMD17 Philips Semiconductors NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ 10. Revision history Table 10: Revision history Document ID Release date PEMD17_PUMD17_3 20050124 Modifications: Data sheet status Change notice Doc. number Supersedes Product data sheet - 9397 750 14367 PUMD17_2 • • This data sheet is an enhancement of data sheet PUMD17_2. • • Type PEMD17 added • • Figure 1, 2, 3, 4, 5, 6, 7 and 8 electrical graphs for TR1 (NPN) and TR2 (PNP) added The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. Table 8 Characteristics: Vi(on) input-on voltage and Vi(off) input-off voltage renamed to VI(on) on-state input voltage and VI(off) off-state input voltage Table 9 Packing information added PUMD17_2 20040422 Product specification - 9397 750 13099 PUMD17_1 PUMD17_1 20031016 Product specification - 9397 750 11866 - 9397 750 14367 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 03 — 24 January 2005 10 of 12 PEMD17; PUMD17 Philips Semiconductors NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ 11. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Definitions 13. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 14. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 14367 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 03 — 24 January 2005 11 of 12 PEMD17; PUMD17 Philips Semiconductors NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information . . . . . . . . . . . . . . . . . . . . 11 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 24 January 2005 Document number: 9397 750 14367 Published in The Netherlands