SD100-13-23-222

UV Enhanced Silicon Photodiode SD100-13-23-222 Advanced Photonix, Inc. Precision – Control – Results WWW.ADVANCEDPHOTONIX.COM P A C K A G E D IM E N S IO N S IN C H [m m ] .1 6 9 [4 .2 9 ] .1 5 7 [3 .9 9 ] 45° .0 9 0 [2 .2 9 ] 3 X Ø .0 1 8 [0 .4 6 ] 1 Ø .2 0 0 [5 .0 8 ] Ø .2 6 4 [6 .7 0 ] Ø .2 5 6 [6 .5 0 ] Ø .3 3 0 [8 .3 8 ] P IN C IR C L E 90° V IE W IN G 2 ANG LE Ø .3 2 0 [8 .1 3 ] 3 Ø .3 6 2 [9 .1 9 ] .0 1 0 [0 .2 5 ] M A X Ø .3 5 7 [9 .0 7 ] G LASS ABO VE C AP 3 X .5 0 0 [1 2 .7 ] M IN TOP EDGE 1 ANODE C H IP D IM E N S IO N S IN C H [m m ] 2 CASE GROUND .1 1 8 [3 .0 0 ] 3 CATHODE SQUARE S C H E M A T IC Ø .1 0 0 [Ø 2 .5 4 ] A C T IV E A R E A T O -5 P A C K A G E DESCRIPTION The SD 100-13-23-222 is UV enhanced silicon PIN photodiode assembled in a hermetic TO-5 metal package with isolated pins. FEATURES  Low Noise  High Speed  High shunt resistance  High response RELIABILITY This API high-reliability detector is in principle able to meet military test requirements (Mil-STD-750, Mil-STD-883) after proper screening and group test. Contact API for recommendations on specific test conditions and procedures. APPLICATIONS  Instrumentation  Medical  Industrial ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse Voltage Operating Temperature Storage Temperature Soldering Temperature Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. MIN -40 -55 - MAX 50 +125 +150 +260 UNITS V °C °C °C Ta = 23°C non condensing see recommended reflow profile REV 12-03-14 Page 1/2 © 2014 Advanced Photonix, Inc. All rights reserved. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 UV Enhanced Silicon Photodiode SD100-13-23-222 Advanced Photonix, Inc. Precision – Control – Results WWW.ADVANCEDPHOTONIX.COM Ta = 23°C unless noted otherwise OPTO-ELECTRICAL PARAMETERS CHARACTERISTIC Dark Current Shunt Resistance Junction Capacitance Junction Capacitance Spectral Application Range Responsivity Breakdown Voltage Noise Equivalent Power Response Time TEST CONDITIONS MIN 200 250 0.10 30 MAX UNITS - 1 300 90 9 0.18 50 3x10-14 6.5 1100 - nA M pF pF nm A/W V W/Hz1/2 RL = 50 ,VR = 0 V - 190 - RL = 50 ,VR = 10 V - 13 - VR = 5V VR = 10 mV VR = 0 V, f = 1 MHz VR = 50 V, f = 1 MHz Spot Scan l= 365 nm V, VR = 0 V I = 10 µA VR = 0V @ l=Peak TYP nS TYPICAL PERFORMANCE SPECTRAL RESPONSE 0.6 0.5 Responsivity,A/W 0.4 0.3 0.2 0.1 0 225 Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. 325 425 525 625 725 Wavelenght, nm 825 925 1025 1125 REV 12-03-14 Page 2/2 © 2014 Advanced Photonix, Inc. All rights reserved. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935