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SD003-151-001

SD003-151-001

  • 厂商:

    LUNAOPTOELECTRONICS(Luna Optoelectronics)

  • 封装:

    -

  • 描述:

    PHOTODIOD 800-1700NM .075MM 1206

  • 详情介绍
  • 数据手册
  • 价格&库存
SD003-151-001 数据手册
Surface-Mount InGaAs Photodetector SD003-151-001 Advanced Photonix, Inc. Precision – Control – Results WWW.ADVANCEDPHOTONIX.COM Image shown is a representation only DESCRIPTION The SD003-151-001 is a high sensitivity, low noise, 0.075 mm diameter active area InGaAs photodiode (chip dimensions 0.3mm x 0.3mm) for detection at SWIR, NIR wavelengths for imaging and sensing applications. The photodetector is assembled in a 1206 package. . RELIABILITY Contact API for recommendations on specific test conditions and procedures. ABSOLUTE MAXIMUM RATINGS SYMBOL Reverse Voltage Operating Temperature Storage Temperature Soldering Temperature Wavelength Range Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. FEATURES  Low Noise  Low Dark Current  Low Capacitance  High Sensitivity  Detection in LWIR     APLICATIONS Industrial Sensing Security Communication Medical Ta = 23°C unless noted otherwise MIN -40 -55 450 MAX 40 +125 +100 +260 1700 UNITS V °C °C °C nm REV 12-10-14 Page 1/2 © 2014 Advanced Photonix, Inc. All rights reserved. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 Surface-Mount InGaAs Photodetector SD003-151-001 Advanced Photonix, Inc. Precision – Control – Results WWW.ADVANCEDPHOTONIX.COM Ta = 23°C unless noted otherwise ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS MIN Ibias = 1 A = 1310 nm, Vr=5V Vbias = 10 mV Vbias = 1V Vbias = 5V; f = 1.0 MHz Vbias = 5V; = 1310 nm Breakdown Voltage Responsivity Shunt Resistance Dark Current Capacitance Rise Time (50 load) Spectral Range Noise Equivalent Power TYP 0.80 800 - Vr= 5V@ =1310 MAX 50 0.90 2.0 0.001 10 1.2 -15 4.0x10 UNITS 1700 - V A/W G nA pF ns nm 1/2 W/Hz TYPICAL PERFORMANCE NOISE CURRENT vs. REVERSE BIAS DARK CURRENT vs. REVERSE BIAS Reverse Dark Current [A] Noise Current (A/rt_Hz) 1.E-12 Noise current @ 23C 1.E-13 1.E-14 1.E-15 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E-05 1.E-09 1.E-11 1.E-13 1.E-03 1.E+02 Reverse dark current @ 23 C 1.E-07 1.E-02 SPECTRAL RESPONSE 1.E+00 1.E+01 1.E+02 CAPACITANCE vs REVERSE BIAS 1 23 0.9 21 Typical Responsivity 0.8 0.6 0.5 0.4 0.3 0.2 0.1 17 15 13 11 9 7 0 600 Typical Capacitance at 1 MHz 19 0.7 Capacitance [pF] Responsivity [A/W] 1.E-01 Reverse Voltage [V] Reverse Voltage (V) 800 1000 1200 1400 1600 5 1800 0 Wavelength [nm] Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. 5 10 15 20 Reverse Bias [V] REV 12-10-14 Page 2/2 © 2014 Advanced Photonix, Inc. All rights reserved. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935
SD003-151-001
物料型号:SD003-151-001

器件简介:该光电探测器是一款高灵敏度、低噪声的InGaAs光电二极管,具有0.075毫米直径的活性区域,适用于短波红外(SWIR)、近红外(NIR)波长的成像和传感应用。

引脚分配:文档中未明确提供引脚分配信息。

参数特性: - 工作温度范围:-40°C 至 +125°C - 存储温度范围:-55°C 至 +100°C - 焊接温度:最高+260°C - 波长范围:450nm至1700nm

功能详解: - 低噪声 - 低暗电流 - 低电容 - 高灵敏度

应用信息:工业传感、安全通信、医疗

封装信息:1206封装尺寸,芯片尺寸为0.3mm x 0.3mm。

此外,文档还提供了一些典型性能图表,包括噪声电流与反向电压的关系、暗电流与反向电压的关系、典型响应度、典型电容值与反向偏压的关系,以及光谱响应。
SD003-151-001 价格&库存

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