VTP413H

DATASHEET Photon Detection VTP413H VTP Process Silicon Photodiode Planar Silicon photodiode in a visible blocking, side looker lensed package suitable for assembly on printed circuit boards. That photodiode exhibits low dark current and fast response. The response time can be reduced by applying a reverse bias to lower the capacitance with low impact on the dark current performance. The preferred operating condition is the photoconductive mode under reverse bias. However that photodiode can also be used in photovoltaic mode. That photodiode has excellent response in the near IR and has a built-in visible blocking filter, making it suitable for applications where ambient light needs to be rejected. www.excelitas.com Page 1 of 5 Key Features       Low dark current Low capacitance High shunt resistance Built-in visible rejection filter Plastic lensed package RoHS-compliant Applications  Smoke detection  Near IR light detection VTP413H-Rev.1-2013.01.11 VTP413H VTP Process Silicon Photodiode General Characteristics and Electro-optical specifications at 25°C Parameter Min Active area Typical Max 7.00 Units mm Storage Temperature -40 100 °C Operating Temperature -40 100 °C 2 Short Circuit Current 120 µA Short Circuit Current Temperature Coefficient 0.20 %/°C Open Circuit Voltage 350 mV Open Circuit Voltage Temperature Coefficient -2.0 mV/°C Dark Current 20 Shunt Resistance Spectral Range 725 50 pF 0fc, -3V Bias 1150 nm Sensitivity at peak 0.55 A/W 140 V Noise Equivalent Power 2850K color temperature 0fc, 10mV bias nm Angular Response 100fc, 2850K color temperature GΩ 975 30 2850K color temperature -10V Bias Peak Spectral Response Breakdown Voltage 100fc, 2850K color temperature nA 0.25 Junction Capacitance Conditions ±48 ° -14 2.3X10 At 50% response W/√Hz Mechanical Characteristics www.excelitas.com Page 2 of 5 VTP413H-Rev.1-2013.01.11 VTP413H VTP Process Silicon Photodiode Spectral Response Rise/Fall Time – Non Saturated www.excelitas.com Page 3 of 5 VTP413H-Rev.1-2013.01.11 VTP413H VTP Process Silicon Photodiode Relative Dark Current vs Temperature Relative Junction Capacitance vs Bias Voltage www.excelitas.com Page 4 of 5 VTP413H-Rev.1-2013.01.11 VTP413H VTP Process Silicon Photodiode Relative Short Circuit Current vs illumination About Excelitas Technologies Excelitas Technologies is a global technology leader focused on delivering innovative, customized solutions to meet the lighting, detection and other highperformance technology needs of OEM customers. From analytical instrumentation to clinical diagnostics, medical, industrial, safety and security, and aerospace and defense applications, Excelitas Technologies is committed to enabling our customers' success in their specialty end-markets. Excelitas Technologies has approximately 3,000 employees in North America, Europe and Asia, serving customers across the world. Excelitas Technologies 22001 Dumberry Road Vaudreuil-Dorion, Quebec Canada J7V 8P7 Telephone: (+1) 450.424.3300 Toll-free: (+1) 800.775.6786 Fax: (+1) 450.424.3345 detection@excelitas.com European Headquarters Excelitas Technologies GmbH & Co. KG Wenzel-Jaksch-Str. 31 D-65199 Wiesbaden Germany Telephone: (+49) 611 492 430 Fax: (+49) 611 492 165 detection.europe@excelitas.com Asia Headquarters Excelitas Technologies 47 Ayer Rajah Crescent #06-12 Singapore 139947 Telephone: (+65) 6775-2022 Fax: (+65) 6775-1008 For a complete listing of our global offices, visit www.excelitas.com/ContactUs © 2011 Excelitas Technologies Corp. All rights reserved. The Excelitas logo and design are registered trademarks of Excelitas Technologies Corp. All other trademarks not owned by Excelitas Technologies or its subsidiaries that are depicted herein are the property of their respective owners. Excelitas reserves the right to change this document at any time without notice and disclaims liability for editorial, pictorial or typographical errors. www.excelitas.com Page 5 of 5 VTP413H-Rev.1-2013.01.11