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SLD-70BG2A

SLD-70BG2A

  • 厂商:

    LUNAOPTOELECTRONICS(Luna Optoelectronics)

  • 封装:

    -

  • 描述:

    Photodiode 550nm 120°

  • 详情介绍
  • 数据手册
  • 价格&库存
SLD-70BG2A 数据手册
SLD-70BG2 Infrared Rejection Filter Planar Photodiode Features     1.9 Optical Clear Epoxy Low capacitance, fast switching time Linear response vs irradiance IR blocking filter Multiple dark current ranges available Red dot 5.1 7.2 Description BG Filter The planar photodiode is designed to operate in either photoconductive or photovoltaic modes. This diode incorporates a BG filter that rejects infrared wavelengths and approximates the response of the human eye. High sensitivity and low dark current allow use in low irradiance applications. The photodiode measures 3.6 mm X 3.6 mm (0.140” X 0.140”) and is supplied on a ceramic base with a clear epoxy dome package. 0.50-0.52 3.4 Max. 6.3 Chip Size = 3.6 mm X 3.6 mm Active Area = 9.8 sq.mm. Cathode Dimensions in mm. (+/- 0.2) Directional Sensitivity Characteristics 40° 30° 20° 10° 1.0 50° 0.8 60° 0.6 Half Angle = 60° Absolute Maximum Ratings Storage Temperature Operating Temperature Soldering Temperature (1) -20C to +85C -20C to +85C 260C Notes: (1) >2 mm from case for < 5 sec. (2) Ee = source @ 2854K (3) Ee = source @  = 580 nm 0.4 70° 0.2 80° 0.0 90° 100° 1.0 Electrical Characteristics (TA=25C unless otherwise noted) Symbol Parameter Min Typ ISC Short Circuit Current 40 55 VOC Open Circuit Voltage 0.40 ID Reverse Dark Current: 100 SLD-70BG2A 100 SLD-70BG2B 20 SLD-70BG2C 5 SLD-70BG2D 1 SLD-70BG2E CJ Junction Capacitance 180 tR Rise Time 4 tF Fall Time 6 TCI Temp. Coef., ISC +0.2 VBR Reverse Breakdown Voltage 50 Maximum Sensitivity Wavelength 550 P Sensitivity Spectral Range 400 R Acceptance Half Angle 60 1/2 Specifications subject to change without notice. Advanced Photonix Canada Inc., 300 St-Sacrement Suite 519 Montréal, QC, Canada H2Y 1X4 Anode 38 nom. Page 1 0.8 Max 700 0.6 0.4 20° 40° 60° 80° 100° 120° Units Test Conditions 2 VR=0V, Ee=25mW/cm (2) A 2 V Ee=25mw/cm (2) nA nA nA nA nA pF s s %/C V nm nm deg VR=100mV, Ee=0 VR=5V, Ee=0 VR=5V, Ee=0 VR=5V, Ee=0 VR=5V, Ee=0 VR=0V, Ee=0, f=1MHz VR=5V, RL=1k (3) VR=5V, RL=1k (3) (2) IR=100A (off center-line) REV 04/30-14 Phone:(514) 768-8000 Fax: (514) 768-8889 http://www.advancedphotonix.com
SLD-70BG2A
- 物料型号:SLD-70BG2 - 器件简介:该二极管设计用于光电导或光伏模式操作,具有低电容、快速切换时间、线性响应和红外阻挡滤波器等特点,适用于低辐照度应用。 - 引脚分配:文档中提到了阳极和阴极的引脚布局。 - 参数特性:包括短路电流(Isc)、开路电压(Voc)、反向暗电流(lo)、结电容(C)、上升时间(tR)、下降时间(tF)、短路电流的温度系数(TC)、反向击穿电压(VBR)、最大灵敏度波长(λB)和灵敏度光谱范围等。 - 功能详解:文档描述了光电二极管的工作原理和特性,包括方向灵敏度特性和电气特性。 - 应用信息:适用于需要模拟人眼响应的低辐照度应用。 - 封装信息:光电二极管尺寸为3.6 mm x 3.6 mm,采用陶瓷基座和透明环氧树脂圆顶封装。
SLD-70BG2A 价格&库存

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