PDB-715-100

PHOTONIC DETECTORS INC. Detector Amplifier Hybrid, Blue Enhanced (ref PDB-C715-100) Type PDB-715-100 PACKAGE DIMENSIONS INCH [mm] WINDOW CAP (WELDED) ACTIVE AREA SURFACE .090 [2.29] ±.005 [0.13] .085 [2.15] .075 [1.90] 82° VIEWING ANGLE Ø.330 [8.38] Ø.320 [8.13] Ø.200 [5.08] PIN CIRCLE PIN 5. CASE SHIELD .500 [12.70] PIN 4. V+ PIN 1. CIRCUIT GROUND PIN 3. VØ.20 [0.50] 5 PLACES .035 [0.89] .030 [0.76] FLANGE .175 [4.44] .165 [4.19] 0.110 [2.79] SQ Ø0.100 [Ø2.54] ACTIVE AREA Ø.365 [Ø9.27] Ø.355 [Ø9.02] PIN 2. OUTPUT TO-5 HERMETIC CAN PACKAGE CAUTION: ESD SENSITIVE DEVICE ACTIVE AREA = 5.07 mm2 APPLICATIONS Medical diagnostic Low signal applications Color analysis Analytical chemistry SPECTRAL RESPONSE IL Light Current +240 O 500 C C mA 0.3 0.2 0.1 0 1200 Soldering Temperature* 0 0.4 1100 TS +70 O C 900 Operating Temperature Range O 0% 1000 TO +125 0 =1 QE 800 -55 0.5 700 Storage Temperature V 600 TSTG 15 500 Reverse Voltage 0.6 400 V BR 0.7 300 ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL PARAMETER MIN MAX UNITS 190 DESCRIPTION: The PDB-715-100 is a low noise, medium speed, blue enhanced silicon photodiode integrated with a low noise JFET monolithic transimpedance op-amp. There is an internal 100 MOhm feedback gain resistor which limits the bandwidth to 10KHz. RESPONSIVITY (A/W) FEATURES 10 Khz bandwidth Internal100 MOhm gain Low offset voltage Low input bias current WAVELENGTH (nm) *1/16 inch from case for 3 secs max PHOTODIODE ELECTRO-OPTICAL CHARACTERISTICS (TA=25OC unless otherwise noted) SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS ISC Short Circuit Current H = 100 fc, 2850 K ID Dark Current H = 0, V R = 10 V Shunt Resistance H = 0, V R = 10 mV TC RSH RSH Temp. Coefficient CJ Junction Capacitance RSH λrange λp V BR NEP tr 45 mA 65 1.0 5.0 nA 2 GΩ H = 0, V R = 10 mV -8 % / oC H = 0, V R = 10 V** 15 pF Spectral Application Range Spot Scan Spectral Response - Peak Spot Scan Breakdown Voltage I = 10 m A Noise Equivalent Power VR = 10 V @ Peak Response Time RL = 1 KΩ VR = 10 V .5 350 1100 950 100 nm 125 2.5x10 15 nm V -14 W/ Hz nS Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. ** f = 1 MHz PAGE 1 OF 2 [FORM NO. 100-PDB-715-100 REV B] PHOTONIC DETECTORS INC. AMPLIFIER SPECIFICATION Detector Amplifier Hybrid (ref PDB-C715-100) Type PDB-715-100 TA = 25° C and VS =± 15 vdc UNLESS OTHERWISE NOTED CHARACTERISTIC TEST CONDITIONS MIN TYP FEEDBACK NETWORK 100 MEG Ω RESISTER, 1pF* CAPACITOR THIN FILM RESISTOR TRIMMED TO ±5% *TOL ±5% 100 INITIAL OFFSET 0.75 LONG TERM OFFSET STABILITY 15 OFFSET CURRENT, VCM=0 5 DIFFERENTIAL 1 X 10-12 3 COMMONMODE 1 X 10-12 3 MAX UNITS MEG Ω 2.0 mV INPUT OFFSET VOLTAGE INPUT BIAS CURRENT µV/MONTH 20 Ω pF INPUT IMPEDANCE COMMONMODE INPUT VOLTAGE RANGE COMMONMODE REJECTION VCM ±10 V ±11 ±12 76 90 pA V VOLTAGE 0, 1 Hz TO 10 Hz 2 µV p-p VOLTAGE 0, f=10 Khz 30 nV/√Hz f=1 Khz 1.8 fA / √Hz INPUT VOLTAGE NOISE INPUT CURRENT NOISE UNITY GAIN, SMALL SIGNAL 0.8 1.0 MHz SLEW RATE, UNITY GAIN 1.0 1.8 V/µs vo= ±10 V, RL=10 KΩ 300 1000 V/mV VOLTAGE @ RL=10 K Ω ±12 ±13 V VOLTAGE @ RL>5 K Ω ±11 ±12.3 V OPERATING RANGE ±4.5 ±15 FREQUENCY RESPONSE OPEN LOOP GAIN OUTPUT CHARACTERISTICS POWER SUPPLY ±18 V AMPLIFIER ABSOLUTE MAXIMUM RATING (TA=25°C UNLESS OTHERWISE NOTED) PARAMETER MIN MAX UNITS SUPPLY VOLTAGE ±4.5 ±18 V 500 mW INTERNAL POWER DISSIPATION STORAGETEMPERATURE -55 +150 °C OPERATINGTEMPERATURE 0 +70 °C Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications [FORM NO. 100-PDB-715-100 REV B] are subject to change without notice. PAGE 2 OF 2