PDB-716-100

PHOTONIC DETECTORS INC. Detector Amplifier Hybrid, Blue Enhanced Type PDB-716-100 PACKAGE DIMENSIONS INCH [mm] WINDOW CAP (WELDED) ACTIVE AREA SURFACE .090 [2.29] ±.005 [0.13] .085 [2.15] .075 [1.90] 82° VIEWING ANGLE Ø.330 [8.38] Ø.320 [8.13] Ø.200 [5.08] PIN CIRCLE PIN 5. CASE SHIELD .500 [12.70] PIN 4. V+ PIN 1. CIRCUIT GROUND PIN 3. VØ.20 [0.50] 5 PLACES .035 [0.89] .030 [0.76] FLANGE .175 [4.44] .165 [4.19] 0.110 [2.79] SQ Ø0.100 [Ø2.54] ACTIVE AREA Ø.365 [Ø9.27] Ø.355 [Ø9.02] PIN 2. OUTPUT TO-5 HERMETIC CAN PACKAGE WARNING: ESD SENSITIVE DEVICE ACTIVE AREA = 5.07 mm2 APPLICATIONS Medical diagnostic Low signal applications Color analysis Analytical chemistry SPECTRAL RESPONSE DESCRIPTION: The PDB-716-100 is a low noise, medium speed, blue enhanced silicon photodiode integrated with a low noise JFET monolithic transimpedance op-amp. There is an internal 100 MOhm feedback gain resistor which limits the bandwidth to 10KHz. Light Current O 500 C mA 0.2 0.1 0 1200 IL +240 C 0.3 1100 Soldering Temperature* 0 0.4 900 TS +70 O C 1000 Operating Temperature Range O 0% 800 TO +125 0 =1 QE 700 -55 0.5 600 Storage Temperature V 500 TSTG 15 400 Reverse Voltage 0.6 300 V BR 0.7 190 ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL PARAMETER MIN MAX UNITS RESPONSIVITY (A/W) FEATURES 10 Khz bandwidth Internal100 MOhm gain Low offset voltage Low input bias current WAVELENGTH (nm) *1/16 inch from case for 3 secs max PHOTODIODE ELECTRO-OPTICAL CHARACTERISTICS (TA=25OC unless otherwise noted) SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS ISC Short Circuit Current H = 100 fc, 2850 K ID Dark Current H = 0, V R = 10 V Shunt Resistance H = 0, V R = 10 mV TC RSH RSH Temp. Coefficient CJ Junction Capacitance RSH λrange λp V BR NEP tr 45 mA 65 1.0 5.0 nA 2 GΩ H = 0, V R = 10 mV -8 % / oC H = 0, V R = 10 V** 15 pF Spectral Application Range Spot Scan Spectral Response - Peak Spot Scan Breakdown Voltage I = 10 m A Noise Equivalent Power VR = 10 V @ Peak Response Time RL = 1 KΩ VR = 10 V .5 350 1100 950 100 nm 125 2.5x10 15 nm V -14 W/ Hz nS Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. ** f = 1 MHz PAGE 1 OF 2 [FORM NO. 100-PDB-716-100 REV A] PHOTONIC DETECTORS INC. AMPLIFIER SPECIFICATION Detector Amplifier Hybrid Type PDB-716-100 TA = 25° C and VS =± 15 vdc UNLESS OTHERWISE NOTED CHARACTERISTIC TEST CONDITIONS FEEDBACK NETWORK 100 MEG Ω RESISTER, 1pF* CAPACITOR THIN FILM RESISTOR TRIMMED TO ±5% *TOL ±5% 0.6 AVD OPEN LOOP GAIN VOM±OUTPUT CHARACTERISTICS VCC± POWER SUPPLY MEG Ω 3.9 mV µV/MONTH OFFSET CURRENT, VCM=0 4 pA DIFFERENTIAL 1 X 10-12 COMMONMODE 1 X 10-12 COMMONMODE REJECTION VCM ±10 V −12 +16 72 90 Ω V VOLTAGE 0, f=1 KHz 2 µVPP VOLTAGE 0, f=10 KHz 40 nV/√Hz f=1 KHz 1 fA / √Hz UNITY GAIN, SMALL SIGNAL RL= 10 KW W CL= 100 pF 2 MHz IN INPUT CURRENT NOISE BOM FREQUENCY RESPONSE UNITS .04 COMMONMODE VN(PP) INPUT VOLTAGE NOISE MAX LONG TERM OFFSET STABILITY Ri INPUT RESISTANCE VICR INPUT VOLTAGE RANGE TYP 100 INITIAL OFFSET FULL RANGE VIO INPUT OFFSET VOLTAGE IIB INPUT BIAS CURRENT MIN SLEW RATE, UNITY GAIN 2.6 3.4 V/µs vo= ±10 V, RL=10 KΩ 20 230 V/mV VOLTAGE @ RL=10 K Ω ±13.2 ±13.7 V VOLTAGE @ RL= 600 Ω ±12.5 ±13 V OPERATING RANGE ±3.5 ±15 ±18 V AMPLIFIER ABSOLUTE MAXIMUM RATING (TA=25°C UNLESS OTHERWISE NOTED) PARAMETER MIN MAX UNITS SUPPLY VOLTAGE ±4.5 ±18 V 500 mW INTERNAL POWER DISSIPATION STORAGETEMPERATURE -55 +150 °C OPERATINGTEMPERATURE 0 +70 °C Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications [FORM NO. 100-PDB-716-100 REV A] are subject to change without notice. PAGE 2 OF 2