PDB-711-10

PHOTONIC DETECTORS INC. Detector Amplifier Hybrid, Blue Enhanced Type PDB-711-10 PACKAGE DIMENSIONS INCH [mm] INDUSTRY EQUIVALENT: OSI 5-10M/10K WINDOW CAP (WELDED) ACTIVE AREA SURFACE .090 [2.29] ±.005 [0.13] .085 [2.15] .075 [1.90] Ø.200 [5.08] PIN CIRCLE PIN 5. CASE SHIELD .500 [12.70] PIN 4. V+ PIN 1. CIRCUIT GROUND PIN 3. V- 82° VIEWING ANGLE Ø.330 [8.38] Ø.320 [8.13] Ø.20 [0.50] 5 PLACES .035 [0.89] .030 [0.76] FLANGE .175 [4.44] .165 [4.19] .110 [2.79] SQ .090 [2.29] ACTIVE AREA Ø.365 [Ø9.27] Ø.355 [Ø9.02] PIN 2. OUTPUT TO-5 HERMETIC CAN PACKAGE CAUTION: ESD SENSITIVE DEVICE .090 [2.29] ACTIVE AREA ACTIVE AREA = 5.09 mm2 APPLICATIONS Medical diagnostic Low signal applications Color analysis Analytical chemistry SPECTRAL RESPONSE DESCRIPTION: The PDB-711-10 is a low noise, medium speed, blue enhanced silicon photodiode integrated with a low noise JFET monolithic transimpedance op-amp. There is an internal 10 MOhm feedback gain resistor which limits the bandwidth to 10KHz. Light Current O 500 C mA 0.2 0.1 0 1200 IL +240 C 0.3 1100 Soldering Temperature* 0 0.4 900 TS +70 O C 1000 Operating Temperature Range O 0% 800 TO +125 0 =1 QE 700 -55 0.5 600 Storage Temperature V 500 TSTG 15 400 Reverse Voltage 0.6 300 V BR 0.7 190 ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL PARAMETER MIN MAX UNITS RESPONSIVITY (A/W) FEATURES 10 Khz bandwidth Internal10 MOhm gain Low offset voltage Low input bias current WAVELENGTH (nm) *1/16 inch from case for 3 secs max PHOTODIODE ELECTRO-OPTICAL CHARACTERISTICS (TA=25OC unless otherwise noted) SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS ISC Short Circuit Current H = 100 fc, 2850 K ID Dark Current H = 0, V R = 10 V Shunt Resistance H = 0, V R = 10 mV TC RSH RSH Temp. Coefficient CJ Junction Capacitance RSH λrange λp V BR NEP tr 45 mA 65 1.0 5.0 nA 2 GΩ H = 0, V R = 10 mV -8 % / oC H = 0, V R = 10 V** 15 pF Spectral Application Range Spot Scan Spectral Response - Peak Spot Scan Breakdown Voltage I = 10 m A Noise Equivalent Power VR = 10 V @ Peak Response Time RL = 1 KΩ VR = 10 V .5 350 1100 950 100 nm 125 2.5x10 15 nm V -14 W/ Hz nS Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. ** f = 1 MHz PAGE 1 OF 2 [FORM NO. 100-PDB-711-10 REV A] PHOTONIC DETECTORS INC. AMPLIFIER SPECIFICATION Detector Amplifier Hybrid Type PDB-711-10 TA = 25° C and VS =± 15 vdc UNLESS OTHERWISE NOTED CHARACTERISTIC TEST CONDITIONS MIN TYP FEEDBACK NETWORK 10 MEG Ω RESISTER, 1pF* CAPACITOR THIN FILM RESISTOR TRIMMED TO ±5% *TOL ±5% 10 INITIAL OFFSET 0.75 LONG TERM OFFSET STABILITY 15 OFFSET CURRENT, VCM=0 5 DIFFERENTIAL 1 X 10-12 3 COMMONMODE 1 X 10-12 3 MAX UNITS MEG Ω 2.0 mV INPUT OFFSET VOLTAGE INPUT BIAS CURRENT µV/MONTH 20 Ω pF INPUT IMPEDANCE COMMONMODE INPUT VOLTAGE RANGE COMMONMODE REJECTION VCM ±10 V ±11 ±12 76 90 pA V VOLTAGE 0, 1 Hz TO 10 Hz 2 µV p-p VOLTAGE 0, f=10 Khz 30 nV/√Hz f=1 Khz 1.8 fA / √Hz INPUT VOLTAGE NOISE INPUT CURRENT NOISE UNITY GAIN, SMALL SIGNAL 0.8 1.0 MHz SLEW RATE, UNITY GAIN 1.0 1.8 V/µs vo= ±10 V, RL=10 KΩ 300 1000 V/mV VOLTAGE @ RL=10 K Ω ±12 ±13 V VOLTAGE @ RL>5 K Ω ±11 ±12.3 V OPERATING RANGE ±4.5 ±15 FREQUENCY RESPONSE OPEN LOOP GAIN OUTPUT CHARACTERISTICS POWER SUPPLY ±18 V AMPLIFIER ABSOLUTE MAXIMUM RATING (TA=25°C UNLESS OTHERWISE NOTED) 10 MOhm PARAMETER MIN MAX UNITS SUPPLY VOLTAGE ±4.5 ±18 V INTERNAL POWER DISSIPATION STORAGETEMPERATURE OPERATINGTEMPERATURE -55 0 500 mW +150 °C +70 °C PIN 5 CASE SHIELD 1 pF PIN 4 V+ 5.09 mm2 PHOTODIODE OP AMP + PIN 1 CIRCUIT GROUND PIN 2 OUTPUT PIN 3 V- Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications [FORM NO. 100-PDB-711-10 REV A] are subject to change without notice. PAGE 2 OF 2