PDB-C608-3

PHOTONIC Silicon Photodiode, Blue Enhanced Solderable Chips Photoconductive Type PDB-C608 Photovoltaic Type PDB-V608 DETECTORS INC. PACKAGE DIMENSIONS INCH (mm) 0.395 [10.03] 0.395 [10.03] 0.395 [10.03] 1.250 [31.75] 1.00 [25.4] 0.031 [0.79] 0.197 [5.00] 0.197 [5.00] 0.197 [5.00] ANODE, RED WIRE ANODE, BUSS W IRE CATHODE, BLACK W IRE 0.016 [0.41] 0.014 [0.36] 30 GAGE P.V.C. WIRE 30 GAGE BUSS WIRE PDB-C608-2 PDB-V608-2 PDB-C608-3 PDB-V608-3 V -40 +125 -40 +125 O Operating Temperature Range -40 +100 -40 +100 O TS Soldering Temperature +224 +224 O IL Light Current 500 500 TO ELECTRO-OPTICAL CHARACTERISTICS SYMBOL CHARACTERISTIC TEST CONDITIONS Short Circuit Current H = 100 fc, 2850 K ID Dark Current H = 0, VR = 5 V* Shunt Resistance H = 0, VR = 10 mV TC RSH RSH Temp. Coefficient H = 0, VR = 10 mV CJ Junction Capacitance H = 0, VR = 5 V** λrange Spectral Application Range Spot Scan λp Spectral Response - Peak Spot Scan V BR Breakdown Voltage N EP tr C C 0.4 =1 00 % 0.3 0.2 0.1 0 mA WAVELENGTH (nm) (TA=25OC unless otherwise noted) ISC RSH C QE 1000 25 0.5 1100 Storage Temperature 75 0.6 800 TSTG UNITS MAX 900 Reverse Voltage MIN 600 V BR MAX 0.7 400 MIN RESPONSIVITY (A/W) PARAMETER PDB-C608 PDB-V608 Optical encoder Position sensor Industrial controls Instrumentation SPECTRAL RESPONSE ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL APPLICATIONS DESCRIPTION: Low cost blue enhanced planar diffused silicon solderable photodiode. The PDB-V608 cell is designed for low noise, photovoltaic applications. The PDB-C608 cell is designed for low capacitance, high speed, photoconductive operation. They are available bare, PVC or buss wire leads. 190 Blue enhanced Photovoltaic type Photoconductive type High quantum efficiency 300 FEATURES 700 ACTIVE AREA = 38.4 mm2 PDB-C608-1 PDB-V608-1 500 BARE CHIP 0.016 [0.41] 0.014 [0.36] 1200 0.016 [0.41] 0.014 [0.36] I = 10 mA Noise Equivalent Power VR = 0 V @ Peak Response Time RL = 1 KΩ VR = 5 V** PDB-C608 PDB-V608 MIN TYP MAX MIN TYP MAX 455 475 25 5 455 50 10 8 -8 200 350 50 2.5 x 10 -13 28 80 MΩ -8 % / oC 350 5 TYP nA 20 5000 1100 940 25 mA 475 40 UNITS pF 1100 nm 940 nm 15 V 1 x 10 -13 TYP 1200 W/ Hz nS *VR = 100 mV on Photovoltaic type **VR = 0 V on Photovoltaic type Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. [FORM NO. 100-PDB-C608-V608 REV A]