PDB-C611-2

PHOTONIC Silicon Photodiode, Blue Enhanced Solderable Chips Photoconductive Type PDB-C611 Photovoltaic Type PDB-V611 DETECTORS INC. PACKAGE DIMENSIONS INCH (mm) 1.375 [34.93] 1.375 [34.93] 1.375 [34.93] 1.00 [25.4] 1.250 [31.75] 0.096 [2.44] 0.096 [2.44] 0.027 [0.69] 0.096 [2.44] ANODE, RED WIRE ANODE, BUSS WIRE CATHODE, BLACK WIRE 0.016 [0.41] 0.014 [0.36] 0.016 [0.41] 0.014 [0.36] BARE CHIP 0.016 [0.41] 0.014 [0.36] 30 GAGE P.V.C. WIRE 30 GAGE BUSS WIRE ACTIVE AREA = 52.0 mm2 PDB-C611-2 PDB-V611-2 TO Operating Temperature Range -40 +100 -40 +100 O TS Soldering Temperature +224 +224 O IL Light Current 500 500 C C C 0.3 0.2 0.1 0 mA 1200 -40 +125 -40 +125 Storage Temperature 1100 V O 0% 900 25 0 =1 QE 0.4 1000 75 0.5 800 MAX 700 Reverse Voltage MIN 600 MAX 0.6 400 MIN UNITS SPECTRAL RESPONSE 0.7 300 PARAMETER PDB-C611 PDB-V611 RESPONSIVITY (A/W) ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) TSTG Optical encoder Position sensor Industrial controls Instrumentation silicon solderable photodiode. The PDB-V611 cell is designed for low noise, photovoltaic applications. The PDB-C611 cell is designed for low capacitance, high speed, photoconductive operation. They are available bare, PVC or buss wire leads. 190 Blue enhanced Photovoltaic type Photoconductive type High quantum efficiency V BR APPLICATIONS DESCRIPTION: Low cost blue enhanced planar diffused FEATURES SYMBOL PDB-C611-3 PDB-V611-3 500 PDB-C611-1 PDB-V611-1 WAVELENGTH (nm) ELECTRO-OPTICAL CHARACTERISTICS (TA=25OC unless otherwise noted) SYMBOL CHARACTERISTIC TEST CONDITIONS ISC Short Circuit Current H = 100 fc, 2850 K ID Dark Current H = 0, VR = 5 V* Shunt Resistance H = 0, V R = 10 mV TC RSH RSH Temp. Coefficient H = 0, V R = 10 mV CJ Junction Capacitance H = 0, V R = 5 V** RSH λrange Spectral Application Range Spot Scan λp Spectral Response - Peak Spot Scan V BR Breakdown Voltage NEP tr I = 10 m A Noise Equivalent Power VR = 0 V @ Peak Response Time RL = 1 KΩ VR = 5 V** PDB-C611 PDB-V611 MIN TYP MAX MIN TYP MAX 585 650 50 5 540 100 60 nA 20 MΩ -8 -8 % / oC 325 8500 pF 10 350 8 1100 350 940 25 mA 600 30 UNITS 50 -13 6 x 10 715 5 TYP 1100 nm 940 nm 15 V -13 2 x 10 TYP 1800 W/ Hz nS *VR = 100 mV on Photovoltaic type **VR = 0 V on Photovoltaic type Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. [FORM NO. 100-PDB-C611-V611 REV C ]