PDI-C114-F

PDI-C114-F

  • 厂商:

    LUNAOPTOELECTRONICS(Luna Optoelectronics)

  • 封装:

    TO-5

  • 描述:

    PHOTODIODE IR 17.74MM SQ TO-5

  • 数据手册
  • 价格&库存
PDI-C114-F 数据手册
PHOTONIC DETECTORS INC. Silicon Photodiode, Near I.R. Photoconductive Type PDI-C114-F PACKAGE DIMENSIONS INCH [mm] WINDOW CAP (WELDED) Ø0.325 [8.25] Ø0.250 [6.35] 0.168 [4.26] 0.030 [0.76] CL 0.075 [1.91] WIRE BONDS 0.500 [12.70] MIN 45° Ø0.358 [9.09] 63° VIEWING ANGLE CL C L 0.200 [5.08] 0.035 [0.89] C L ANODE Ø0.018 [0.46] CATHODE Ø0.018 [0.46] I.R. PASS FILTER HEADER PHOTODIODE 0.235 [5.97] ACTIVE 0.123 [3.12] AREA 0.135 [3.43] 0.223 [5.66] ACTIVE AREA TO-5 HERMETIC CAN PACKAGE ACTIVE AREA = 17.74 mm2 TS Soldering Temperature* IL Light Current +240 0.5 O O C C mA 0.3 0.2 0.1 0 *1/16 inch from case for 3 secs max 1200 +80 1100 -40 0.4 900 Operating Temperature Range C 0% 10 1000 TO O = 800 +100 QE 700 -55 0.5 600 Storage Temperature 0.6 500 TSTG V 400 100 300 Reverse Voltage 190 V BR SPECTRAL RESPONSE 0.7 RESPONSIVITY (A/W) DESCRIPTION The PDI-C114-F is a silicon, PIN planar I.R. pass visible rejection diffused photodiode with NIR pass, visible Match to I.R. emitters light rejection optical filter. Ideal for high speed, low capacitance, photoconductive Hermetic package NIR applications. Packaged in a hermetic TO-5 metal can with a flat window cap. ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL PARAMETER MIN MAX UNITS APPLICATIONS I.R. detector I.R. laser detector Photo-interrupters Industrial controls FEATURES High speed WAVELENGTH (nm) ELECTRO-OPTICAL CHARACTERISTICS (TA=25 C unless otherwise noted) SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP O ISC Short Circuit Current H = 100 fc, 2850 K ID Dark Current H = 0, V R = 10 V Shunt Resistance H = 0, V R = 10 mV TC RSH RSH RSH Temp. Coefficient H = 0, V R = 10 mV CJ Junction Capacitance H = 0, V R = 10 V** λrange Spectral Application Range Spot Scan λp Spectral Response - Peak Spot Scan V BR Breakdown Voltage I = 10 m A N EP tr Noise Equivalent Power V R = 10 V @ Peak Response Time RL = 1 KΩ V R = 50 V 171 8.0 nA 500 MΩ -8 % / oC 50 pF 700 1100 950 100 UNITS mA 212 3 150 MAX nm 125 V -14 5.0x10 20 nm W/ Hz nS Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. ** f = 1 MHz
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