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PDB-C116

PDB-C116

  • 厂商:

    LUNAOPTOELECTRONICS(Luna Optoelectronics)

  • 封装:

    2-SMD,无引线

  • 描述:

    Photodiode 950nm 1ns 2-SMD, No Lead

  • 数据手册
  • 价格&库存
PDB-C116 数据手册
PHOTONIC High Speed Silicon Photodiode, Photoconductive chip on submount Type PDB-C116 DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] METALIZATION THIS SIDE C L .040 [1.02] .060 [1.52] PD I CL .030 [0.76] NOTE: PHOTODIODE CHIP TO BE EUTECTICALLY DIE ATTACHED TO SUBMOUNT CERAMIC ANODE METALIZATION CATHODE METALIZATION PHOTODIODE .015 [0.38] .020 [0.51] .080 [2.03] CERAMIC SUBMOUNT .050 [1.27] .025 [0.64] SQ Ø.012 [Ø0.30] ACTIVE AREA ANODE PAD BOTTOM SIDE CATHODE SUBMOUNT PACKAGE 2 ACTIVE AREA = 0.073 mm DESCRIPTION The PDB-C116 is a high speed silicon, PIN planar diffused photodiode, packaged as a submount. It is used as an optical feedback detector in laser diode modules and other fiber optic data link modules. Operating Temperature Range -55 +125 O C TS Soldering Temperature* +240 O C IL Light Current mA 0.3 0.2 0.1 0 *1/16 inch from case for 3 secs max 1200 TO 0.4 1100 C 900 O 1000 +150 800 -65 % 00 =1 QE 0.5 700 Storage Temperature 0.6 600 TSTG 0.5 V 500 150 400 Reverse Voltage 300 V BR SPECTRAL RESPONSE 0.7 190 ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL PARAMETER MIN MAX UNITS APPLICATIONS Laser diodes Modules Fiber optic modules RESPONSIVITY (A/W) FEATURES High speed Low cost High reliability WAVELENGTH (nm) ELECTRO-OPTICAL CHARACTERISTICS (TA=25 C unless otherwise noted) SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP O ISC Short Circuit Current H = 100 fc, 2850 K ID Dark Current H = 0, V R = 10 V RSH Shunt Resistance H = 0, V R = 10 mV TC RSH RSH Temp. Coefficient H = 0, V R = 10 mV CJ Junction Capacitance H = 0, V R = 10 V** λrange Spectral Application Range Spot Scan λp Spectral Response - Peak Spot Scan V BR Breakdown Voltage I = 10 m A N EP tr Noise Equivalent Power V R = 10 V @ Peak Response Time RL = 1 KΩ V R = 10 V 7.0 2.0 nA 500 MΩ -8 % / oC 1.0 pF 350 1100 950 100 UNITS mA 8.0 .5 400 MAX nm 150 V -15 9.0x10 1.0 nm W/ Hz nS Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. ** f = 1 MHz [FORM NO. 100-PDB-C116 REV A]
PDB-C116 价格&库存

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