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PDB-V102-I

PDB-V102-I

  • 厂商:

    LUNAOPTOELECTRONICS(Luna Optoelectronics)

  • 封装:

    TO18-3

  • 描述:

    PHOTODIODE BLUE 0.87MM SQ TO-18

  • 数据手册
  • 价格&库存
PDB-V102-I 数据手册
PHOTONIC Silicon Photodiode, Blue Enhanced Photovoltaic Isolated Type PDB-V102-I DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] Ø0.184 [4.67] WINDOW CAP (WELDED) Ø0.155 [3.94] 0.198 [5.03] 0.125 [3.18] WIRE BONDS 0.500 [12.70] MIN Ø0.100 B.C. PHOTODIODE CHIP CL Ø0.210 [5.33] 45° 0.040 [1.02] CL 0.042 [1.06] Ø0.019 [0.48] 3 PLACES Ø0.016 [0.41] CASE GROUND CATHODE HEADER ANODE 0.053 [1.35] 0.030 [0.76] ACTIVE AREA TO-18 HERMETIC CAN PACKAGE 0.045 [1.14] ACTIVE AREA ACTIVE AREA = .87 mm2 DESCRIPTION The PDB-V102-I is a silicon, PIN planar diffused, blue enhanced photodiode. Ideal for low noise photovoltaic applications. Packaged in a hermetic TO-18 metal can with a flat window and isolated ground lead. -40 +125 O C +240 O C IL Light Current 0.5 mA 0.3 0.2 0.1 0 *1/16 inch from case for 3 secs max 1200 Operating Temperature Range 1100 TO 0.4 900 C 1000 O 800 +150 % 00 =1 QE 0.5 700 -55 0.6 600 Storage Temperature Soldering Temperature* V 500 TSTG TS 75 400 Reverse Voltage 0.7 300 V BR SPECTRAL RESPONSE 190 ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL PARAMETER MIN MAX UNITS APPLICATIONS Instrumentation Character recognition Laser detection Industrial controls RESPONSIVITY (A/W) FEATURES Low noise Blue enhanced High shunt resistance High response WAVELENGTH (nm) ELECTRO-OPTICAL CHARACTERISTICS (TA=25 C unless otherwise noted) SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP O ISC Short Circuit Current H = 100 fc, 2850 K ID Dark Current H = 0, V R = 10 V RSH Shunt Resistance H = 0, V R = 10 mV TC RSH RSH Temp. Coefficient H = 0, V R = 10 mV CJ Junction Capacitance H = 0, V R = 0 V** λrange Spectral Application Range Spot Scan λp Spectral Response - Peak Spot Scan V BR Breakdown Voltage I = 10 m A N EP tr 7 125 pA 10 GΩ -8 % / oC 250 350 30 UNITS mA 8 40 2 MAX pF 1100 nm 950 nm 50 V -15 Noise Equivalent Power V R = 10 mV @ Peak 3x10 Response Time RL = 1 KΩ V R = 0 V 400 W/ Hz nS Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. **f = 1 MHz
PDB-V102-I 价格&库存

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