PDI-V114-F

PDI-V114-F

  • 厂商:

    LUNAOPTOELECTRONICS(Luna Optoelectronics)

  • 封装:

    TO-5

  • 描述:

    PHOTODIODE IR 17.63MM SQ TO-5

  • 数据手册
  • 价格&库存
PDI-V114-F 数据手册
PHOTONIC DETECTORS INC. Silicon Photodiode, Near I.R. Photovoltaic Type PDI-V114-F PACKAGE DIMENSIONS INCH [mm] WINDOW CAP (WELDED) Ø0.325 [8.25] Ø0.250 [6.35] 0.168 [4.26] 0.030 [0.76] 0.075 [1.91] CL WIRE BONDS 0.500 [12.70] MIN 45° Ø0.358 [9.09] 63° VIEWING ANGLE CL C L 0.200 [5.08] 0.035 [0.89] C L ANODE Ø0.018 [0.46] CATHODE Ø0.018 [0.46] I.R. PASS FILTER HEADER PHOTODIODE 0.235 [5.97] ACTIVE 0.123 [3.12] AREA 0.135 [3.43] 0.223 [5.66] ACTIVE AREA TO-5 HERMETIC CAN PACKAGE ACTIVE AREA = 17.74 mm2 TS Soldering Temperature* IL Light Current +240 0.5 O O C C mA 0.3 0.2 0.1 0 *1/16 inch from case for 3 secs max 1200 +80 1100 -40 0.4 900 Operating Temperature Range C 1000 TO O 0% 10 800 +100 = QE 700 -55 0.5 600 Storage Temperature 0.6 500 TSTG V 400 100 300 Reverse Voltage 190 V BR SPECTRAL RESPONSE 0.7 RESPONSIVITY (A/W) DESCRIPTION The PDI-V114-F is a silicon, PIN planar I.R. pass visible rejection diffused photodiode with NIR pass, visible Match to I.R. emitters light rejection optical filter. Ideal for low noise, photovoltaic NIR applications. PackHermetic package aged in a hermetic TO-5 metal can with a flat window cap. ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL PARAMETER MIN MAX UNITS APPLICATIONS I.R. detector I.R. laser detector Photo-interrupters Industrial controls FEATURES Low noise WAVELENGTH (nm) ELECTRO-OPTICAL CHARACTERISTICS (TA=25 C unless otherwise noted) SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP O ISC Short Circuit Current H = 100 fc, 2850 K ID Dark Current H = 0, V R = 10 V Shunt Resistance H = 0, V R = 10 mV TC RSH RSH RSH Temp. Coefficient H = 0, V R = 10 mV CJ Junction Capacitance H = 0, V R = 0 V** λrange Spectral Application Range Spot Scan λp Spectral Response - Peak Spot Scan V BR Breakdown Voltage I = 10 m A N EP tr 180 550 pA 1 GΩ -8 % / oC 2000 700 30 UNITS mA 207 335 .2 MAX pF 1100 nm 950 nm 50 V -14 Noise Equivalent Power V R = 10 mV @ Peak 2x10 Response Time RL = 1 KΩ V R = 0 V 900 W/ Hz nS Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. ** f = 1 MHz
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