PDI-V109-F

PHOTONIC DETECTORS INC. Silicon Photodiode, Near I.R. Photovoltaic Type PDI-V109-F PACKAGE DIMENSIONS INCH [mm] Ø0.483 [12.27] Ø0.449 [11.39] 0.215 [5.46] 0.065 [1.65] WIRE BONDS 1.50 [38.1] C L 79° VIEWING ANGLE Ø0.550 [13.97] PHOTODIODE 0.295 [7.49] ANODE Ø0.018 [0.46] CL CATHODE Ø0.018 [0.46] HEADER WINDOW CAP (WELDED) I.R. PASS FILTER 0.340 [8.64] 0.230 [5.84] 0.209 [5.31] ACTIVE AREA TO-8 HERMETIC CAN PACKAGE 0.319 [8.10] ACTIVE AREA ACTIVE AREA = 42.86 mm2 -40 +80 O C +240 O C TS Soldering Temperature* IL Light Current 1.0 mA 0.3 0.2 0.1 0 *1/16 inch from case for 3 secs max 1200 Operating Temperature Range 1100 C TO 900 O 0% 10 1000 +100 = 800 -55 QE 0.4 700 Storage Temperature 0.5 600 TSTG 0.6 500 V 400 100 300 Reverse Voltage 190 V BR SPECTRAL RESPONSE 0.7 RESPONSIVITY (A/W) DESCRIPTION The PDI-V109-F is a silicon, PIN planar I.R. pass visible rejection diffused photodiode with NIR pass, visible Match to I.R. emitters light rejection optical filter. Ideal for low noise photovoltaic NIR applications. PackHermetic package aged in a hermetic TO-8 metal can with a flat window cap. ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL PARAMETER MIN MAX UNITS APPLICATIONS I.R. detector I.R. laser detector Photo-interrupters Industrial controls FEATURES Low noise WAVELENGTH (nm) ELECTRO-OPTICAL CHARACTERISTICS (TA=25 C unless otherwise noted) SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP O ISC Short Circuit Current H = 100 fc, 2850 K ID Dark Current H = 0, V R = 10 mV Shunt Resistance H = 0, V R = 10 mV TC RSH RSH RSH Temp. Coefficient H = 0, V R = 10 mV CJ Junction Capacitance H = 0, V R = 0 V** λrange Spectral Application Range Spot Scan λp Spectral Response - Peak Spot Scan V BR Breakdown Voltage I = 10 m A N EP tr Noise Equivalent Power VR = 10 mV @ Peak Response Time RL = 1 KΩ V R = 0 V 365 200 pA 150 MΩ -8 % / oC 4,500 700 pF 1100 950 20 UNITS mA 405 66 50 MAX nm nm 30 V -14 1.0x10 1000 W/ Hz nS Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. ** f = 1 MHz