PDB-C210

PHOTONIC DETECTORS INC. Silicon Photodiode, Blue Enhanced Ring Detector Type PDB-C210 PACKAGE DIMENSIONS INCH (mm) Ø0.795 Ø[20.19] Ø0.720 Ø[18.29] Ø0.500 [12.70] PIN CIRCLE OUTER AA ANODE 0.225 [5.72] 0.159 [4.04] WINDOW CAP (WELDED) Ø0.608 Ø[15.44] 0.375 [9.53] Ø0.030[0.76] TYP 1 Ø0.3937 [10.00] Ø0.1969 [5.00] OUTER ACTIVE AREA 2 Ø0.1575 [4.00] CENTER ACTIVE AREA 3 HEADER 0.030 [0.76] PHOTODIODE CHIP ANODE CENTER AA CATHODE CASE GROUND 0.189 [4.80] TO-8 .795 INCH [20.19] DIA HERMETIC PACKAGE ACTIVE AREA= OUTER 58.91 mm2 , CENTER 12.57 mm2 APPLICATIONS DESCRIPTION: The PDB-C210 is a two element "Ring ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) O TO Operating Temperature Range -40 +100 -40 +100 O TS Soldering Temperature +224 +224 O IL Light Current 500 500 C C C 0.3 0.2 0.1 0 mA 1200 -40 +125 -40 +125 0.4 0% 1100 V 0 =1 QE 900 25 0.5 1000 Storage Temperature 75 0.6 800 TSTG UNITS MAX 700 Reverse Voltage MIN 600 V BR MAX 0.7 500 MIN OUTER 400 PARAMETER CENTER SPECTRAL RESPONSE RESPONSIVITY (A/W) SYMBOL Medical Sensor Position sensor Industrial controls Instrumentation Detector". The center and outer active areas are seperated by a .0394 inch (1.0 mm) gap. Designed for either photovoltaic low noise or photoconductive high speed applications. It is packaged in a hermetic jumbo TO-8 metal can with a flat glass window. 300 Blue enhanced Photovoltaic type Photoconductive type High quantum efficiency 190 FEATURES WAVELENGTH (nm) ELECTRO-OPTICAL CHARACTERISTICS (TA=25OC unless otherwise noted) SYMBOL CHARACTERISTIC TEST CONDITIONS ISC Short Circuit Current H = 100 fc, 2850 K ID Dark Current H = 0, VR = 10 V Shunt Resistance H = 0, V R = 10 mV TC RSH RSH Temp. Coefficient H = 0, V R = 10 mV CJ Junction Capacitance H = 0, VR = 10 V** RSH λrange Spectral Application Range Spot Scan λp Spectral Response - Peak Spot Scan V BR Breakdown Voltage NEP tr I = 10 m A Noise Equivalent Power VR = 10 V @ Peak Response Time RL = 1 KΩ VR = 50 V CENTER OUTER MIN TYP MAX MIN TYP MAX 240 mA 900 25 200 UNITS 100 nA 50 MΩ -8 -8 % / oC 175 800 pF 500 350 25 1100 350 1100 nm 940 940 nm 50 50 V -13 -13 2.5x10 TYP 6.0x10 TYP 20 35 W/ Hz nS Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. **f=1 MHz [FORM NO. 100-PDB-C210 REV A]