PDB-V216S

PHOTONIC DETECTORS INC. X-RAY, Silicon Photodiode Array, Photovoltaic (with scintillation screen) Type PDB-V216-S PACKAGE DIMENSIONS INCH [mm] C L CL ±.005 [.13] .992 [25.20] .062 [1.57] .100 [2.54] ACTIVE AREA 1 .373 [9.47] .062 [1.57] COMMON CATHODE .800 [20.32] 16X ANODE 5 7 9 11 13 15 17 3 CL .145 [3.69] 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 .072 [1.84] ACTIVE AREA .300 [7.62] .425 [10.80] 2X Ø.018 ROUND PIN HEADER STRIP CL 2 4 6 8 10 12 14 16 18 SCREEN COMMON CATHODE .100 [2.54] ACTIVE AREA CL CL TYP ANODE 16 PLACES .010 [0.25] GAP .048 [1.22] ACTIVE AREA ELEMENT NO. 1 2 3 4 5 6 7 8 9 PIN CONNECTIONS PIN NO. ELEMENT NO. 1 10 4 11 3 12 6 13 5 14 8 15 7 16 10 CATHODE 9 CATHODE .229 [5.82] .277 [7.04] FLUOROSCOPIC X-RAY SCREEN IS A 19.0% EFFICIENT, ZnCdS:Ag PHOSPHORUS DOPED SCREEN WITH A 530 nm (GREEN) EMISSION FOR 9.66/26.7 KeV X-RAY ABSORPTION APPLICATIONS. PIN NO. 12 11 14 13 16 15 18 2 17 16 ELEMENT X-RAY PACKAGE ACTIVE AREA = 2.31mm2 DESCRIPTION The PDB-V216-S is a common cathode, monolithic silicon PIN photodiode 16 element array. Designed to be stacked end to end to form a line of pixels. Supplied with a fluoroscopic X-Ray scintillation screen. -20 +75 O TS Soldering Temperature* +265 O IL Light Current C C mA 0.3 0.2 0.1 0 *1/16 inch from case for 3 secs max 1200 Operating Temperature Range 1100 TO C 900 O 1000 +100 800 -40 0.4 700 Storage Temperature % 00 =1 QE 0.5 600 TSTG 500 V 500 50 400 Reverse Voltage 0.6 300 VBR SPECTRAL RESPONSE 0.7 190 ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL PARAMETER MIN MAX UNITS APPLICATIONS Luggage X-ray X-Ray scanner X-Ray inspection RESPONSIVITY (A/W) FEATURES .062 inch centers Stackable Scintillation screen Low capacitance WAVELENGTH (nm) ELECTRO-OPTICAL CHARACTERISTICS (TA=25OC unless otherwise noted, without scintillator) SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS ISC Short Circuit Current H = 100 fc, 2850 K ID Dark Current H = 0, V R = 1 V Shunt Resistance H = 0, V R = 10 mV TC RSH RSH Temp. Coefficient CJ 18 mA 28 1.0 5.0 nA 400 MΩ H = 0, V R = 10 mV -8 % / oC Junction Capacitance H = 0, V R = 0 V** 300 λrange Spectral Application Range Spot Scan λp Spectral Response - Peak Spot Scan VBR Breakdown Voltage I = 10 m A RSH NEP tr Noise Equivalent Power VR = 10 V @ Peak Response Time RL = 50 Ω VR = 10 V 200 350 15 400 pF 1100 nm 950 nm 30 V -14 2x10 50 W/ Hz nS Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. ** f = 1 MHz [FORM NO. 100-PDB-V216-S REV D]