PDB-V607-2

PHOTONIC Silicon Photodiode, Blue Enhanced Solderable Chips Photoconductive Type PDB-C607 Photovoltaic Type PDB-V607 DETECTORS INC. PACKAGE DIMENSIONS INCH (mm) 0.397 [10.08] 0.397 [10.08] 0.397 [10.08] 1.250 [31.75] 1.00 [25.4] 0.029 [0.74] 0.097 [2.46] 0.097 [2.46] 0.097 [2.46] ANODE, BUSS WIRE ANODE, RED WIRE CATHODE, BLACK WIRE 0.016 [0.41] 0.014 [0.36] 30 GAGE P.V.C. WIRE 30 GAGE BUSS WIRE ACTIVE AREA = 14.5 mm2 PDB-C607-1 PDB-V607-1 PDB-C607-2 PDB-V607-2 PDB-C607-3 PDB-V607-3 -40 +125 -40 +125 Operating Temperature Range -40 +100 -40 +100 O TS Soldering Temperature +224 +224 O IL Light Current 500 500 TSTG TO Storage Temperature ELECTRO-OPTICAL CHARACTERISTICS SYMBOL CHARACTERISTIC TEST CONDITIONS Short Circuit Current H = 100 fc, 2850 K ID Dark Current H = 0, VR = 5 V* Shunt Resistance H = 0, VR = 10 mV TC RSH RSH Temp. Coefficient H = 0, VR = 10 mV CJ Junction Capacitance H = 0, VR = 5 V** λrange Spectral Application Range Spot Scan λp Spectral Response - Peak Spot Scan V BR Breakdown Voltage N EP tr C C 00 % 0.3 0.2 0.1 0 mA WAVELENGTH (nm) (TA=25OC unless otherwise noted) ISC RSH C =1 1100 V O QE 0.4 900 25 0.5 1000 75 0.6 800 UNITS MAX 700 Reverse Voltage MIN 600 V BR MAX SPECTRAL RESPONSE 0.7 500 MIN Optical encoder Position sensor Industrial controls Instrumentation 400 PARAMETER PDB-C607 PDB-V607 RESPONSIVITY (A/W) ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL APPLICATIONS DESCRIPTION: Low cost blue enhanced planar diffused silicon solderable photodiode. The PDB-V607 cell is designed for low noise, photovoltaic applications. The PDB-C607 cell is designed for low capacitance, high speed, photoconductive operation. They are available bare, PVC or buss wire leads. 300 Blue enhanced Photovoltaic type Photoconductive type High quantum efficiency BARE CHIP 190 FEATURES 0.016 [0.41] 0.014 [0.36] 1200 0.016 [0.41] 0.014 [0.36] I = 10 mA Noise Equivalent Power VR = 0 V @ Peak Response Time RL = 1 KΩ VR = 5 V** PDB-C607 PDB-V607 MIN TYP MAX MIN TYP MAX 165 185 15 6 165 35 15 10 -8 125 350 100 8 x 10 -13 25 50 MΩ -8 % / oC 350 5 TYP nA 30 2400 1100 940 50 mA 185 25 UNITS pF 1100 nm 940 nm 10 V 9 x 10 -14 TYP 1000 W/ Hz nS *VR = 100 mV on Photovoltaic type **VR = 0 V on Photovoltaic type Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. [FORM NO. 100-PDB-C607-V607 REV A]