PDB-V610-2

PHOTONIC Silicon Photodiode, Blue Enhanced Solderable Chips Photoconductive Type PDB-C610 Photovoltaic Type PDB-V610 DETECTORS INC. PACKAGE DIMENSIONS INCH (mm) 0.797 [20.24] 0.797 [20.24] 0.797 [20.24] 1.250 [31.75] 1.00 [25.4] 0.029 [0.74] 0.097 [2.46] 0.097 [2.46] 0.097 [2.46] ANODE, RED WIRE ANODE, BUSS WIRE CATHODE, BLACK WIRE 0.016 [0.41] 0.014 [0.36] 30 GAGE P.V.C. WIRE 30 GAGE BUSS WIRE PDB-C610-2 PDB-V610-2 PDB-C610-3 PDB-V610-3 25 V -40 +125 -40 +125 O Operating Temperature Range -40 +100 -40 +100 O TS Soldering Temperature +224 +224 O IL Light Current 500 500 TSTG TO Storage Temperature ELECTRO-OPTICAL CHARACTERISTICS SYMBOL CHARACTERISTIC TEST CONDITIONS Short Circuit Current H = 100 fc, 2850 K ID Dark Current H = 0, VR = 5 V* Shunt Resistance H = 0, VR = 10 mV TC RSH RSH Temp. Coefficient H = 0, VR = 10 mV CJ Junction Capacitance H = 0, VR = 5 V** λrange Spectral Application Range Spot Scan λp Spectral Response - Peak Spot Scan V BR Breakdown Voltage N EP tr C C QE 0.4 =1 00 % 0.3 0.2 0.1 0 mA WAVELENGTH (nm) (TA=25OC unless otherwise noted) ISC RSH C 0.5 1100 75 0.6 900 UNITS MAX 1000 Reverse Voltage MIN 800 V BR MAX 600 MIN 0.7 400 PARAMETER SPECTRAL RESPONSE (TA=25OC unless otherwise noted) PDB-C610 PDB-V610 Optical encoder Position sensor Industrial controls Instrumentation 190 ABSOLUTE MAXIMUM RATING SYMBOL APPLICATIONS DESCRIPTION: Low cost blue enhanced planar diffused silicon solderable photdiode. The PDB-V610 cell is designed for low noise, photovoltaic applications. The PDB-C610 cell is designed for low capacitance, high speed, photoconductive operation. They are available bare, PVC or buss wire leads. 300 Blue enhanced Photovoltaic type Photoconductive type High quantum efficiency RESPONSIVITY (A/W) FEATURES 700 ACTIVE AREA = 29.5 mm2 PDB-C610-1 PDB-V610-1 500 BARE CHIP 0.016 [0.41] 0.014 [0.36] 1200 0.016 [0.41] 0.014 [0.36] I = 10 mA Noise Equivalent Power VR = 0 V @ Peak Response Time RL = 1 KΩ VR = 5 V** PDB-C610 PDB-V610 MIN TYP MAX MIN TYP MAX 325 365 20 6 325 40 12 10 200 350 50 4.5 x 10 -13 26 40 MΩ -8 % / oC 350 5 TYP nA 25 5000 1100 940 25 mA 365 20 -8 UNITS pF 1100 nm 940 nm 15 V 1.2 x 10 -13 1200 TYP W/ Hz nS *VR = 100 mV on Photovoltaic type **VR = 0 V on Photovoltaic type Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. [FORM NO. 100-PDB-C610-V610 REV A]