PDB-V612-3

PHOTONIC Silicon Photodiode, Blue Enhanced Solderable Chips Photoconductive Type PDB-C612 Photovoltaic Type PDB-V612 DETECTORS INC. PACKAGE DIMENSIONS INCH (mm) 0.700 [17.78] 0.700 [17.78] 0.700 [17.78] 6.25 [158.7] 1.00 [25.4] 0.035 [0.89] 0.200 [5.08] 0.200 [5.08] 0.200 [5.08] ANODE, RED WIRE ANODE, BUSS WIRE CATHODE, BLACK WIRE 0.016 [0.41] 0.014 [0.36] 0.016 [0.41] 0.014 [0.36] BARE CHIP PDB-C612-2 PDB-V612-2 PDB-C612-3 PDB-V612-3 TO Operating Temperature Range -40 +100 -40 +100 O TS Soldering Temperature +224 +224 O IL Light Current 500 500 Storage Temperature ELECTRO-OPTICAL CHARACTERISTICS SYMBOL CHARACTERISTIC TEST CONDITIONS Short Circuit Current H = 100 fc, 2850 K ID Dark Current H = 0, VR = 5 V* Shunt Resistance H = 0, VR = 10 mV TC RSH RSH Temp. Coefficient H = 0, VR = 10 mV CJ Junction Capacitance H = 0, VR = 5 V** λrange Spectral Application Range Spot Scan λp Spectral Response - Peak Spot Scan V BR Breakdown Voltage N EP tr C C % 0.3 0.2 0.1 0 mA WAVELENGTH (nm) (TA=25OC unless otherwise noted) ISC RSH C 00 1200 -40 +125 -40 +125 TSTG =1 1100 V O QE 0.4 900 25 0.5 1000 75 0.6 800 UNITS MAX 700 Reverse Voltage MIN 600 V BR MAX 0.7 400 MIN RESPONSIVITY (A/W) PARAMETER PDB-C612 PDB-V612 Optical encoder Position sensor Industrial controls Instrumentation SPECTRAL RESPONSE ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL APPLICATIONS DESCRIPTION: Low cost blue enhanced planar diffused silicon solderable photodiode. The PDB-V612 cell is designed for low noise, photovoltaic applications. The PDB-C612 cell is designed for low capacitance, high speed, photoconductive operation. They are available bare, PVC or buss wire leads. 300 Blue enhanced Photovoltaic type Photoconductive type High quantum efficiency 30 GAGE BUSS WIRE 190 FEATURES 30 GAGE P.V.C. WIRE 2 500 ACTIVE AREA = 68.7 mm PDB-C612-1 PDB-V612-1 0.016 [0.41] 0.014 [0.36] I = 10 mA Noise Equivalent Power VR = 0 V @ Peak Response Time RL = 1 KΩ VR = 5 V** PDB-C612 PDB-V612 MIN TYP MAX MIN TYP MAX 810 900 75 5 720 150 10 7 -8 300 350 50 7.0 x 10 -13 45 80 MΩ -8 % / oC 350 5 TYP nA 15 9000 1100 940 25 mA 800 40 UNITS pF 1100 nm 940 nm 15 V 2.16 x 10 -13 2800 TYP W/ Hz nS *VR = 100 mV on Photovoltaic type **VR = 0 V on Photovoltaic type Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. [FORM NO. 100-PDB-C612-V612 REV A]