0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
PDU-C119Q

PDU-C119Q

  • 厂商:

    LUNAOPTOELECTRONICS(Luna Optoelectronics)

  • 封装:

    TO-5

  • 描述:

    PHOTODIODE UV 7.95MM SQ TO-5

  • 详情介绍
  • 数据手册
  • 价格&库存
PDU-C119Q 数据手册
PHOTONIC Silicon Photodiode, U.V. Enhanced Photoconductive Type PDU-C119-Q DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] Ø0.325 [8.25] Ø0.250 [6.35] QUARTZ WINDOW CAP (WELDED) 0.030 [0.76] CL 0.168 [4.26] 0.075 [1.91] WIRE BONDS 0.500 [12.70] MIN 45° Ø0.358 [9.09] CL 78° VIEWING ANGLE 0.200 [5.08] 0.035 [0.89] CL ANODE Ø0.018 [0.46] CATHODE Ø0.018 [0.46] HEADER PHOTODIODE CL 0.125 [3.18] 0.113 [2.87] ACTIVE AREA TO-5 CAN PACKAGE 0.113 [2.87] ACTIVE AREA ACTIVE AREA = 7.95 mm2 APPLICATIONS DESCRIPTION The PDU-C119-Q is a silicon, PIN planar Spectrometers diffused, U.V. enhanced photodiode. Ideal Fluorescent analysers for high speed photoconductive U.V. applica- U.V. meters tions.Packaged in a TO-5 metal can with a Colorimeters flat quartz window cap. Light Current O 500 C mA 0.2 0.1 0 WAVELENGTH (nm) *1/16 inch from case for 3 secs max ELECTRO-OPTICAL CHARACTERISTICS (TA=25OC unless otherwise noted) SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP E c = 0.1 mW/cm 2, l=350 nm ISC Short Circuit Current ID Dark Current H = 0, V R = 5 V Shunt Resistance H = 0, V R = 10 mV TC RSH RSH Temp. Coefficient CJ Junction Capacitance RSH λrange R V BR NEP tr 1200 IL +240 C 0.3 1100 Soldering Temperature* +125 0.4 900 TS -40 O C 1000 Operating Temperature Range O 0% 800 TO +150 0 =1 QE 700 -55 0.5 600 Storage Temperature V 500 TSTG 30 400 Reverse Voltage 0.6 300 V BR SPECTRAL RESPONSE 0.7 190 ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL PARAMETER MIN MAX UNITS RESPONSIVITY (A/W) FEATURES High speed U.V. enhanced Quartz window .6 MAX UNITS mA 1.0 2.5 5 nA 300 MΩ H = 0, V R = 10 mV -8 % / oC H = 0, V R = 5 V** 130 pF Spectral Application Range Spot Scan 150 190 1100 Responsivity VR = 0 V, l = 254 nm .12 .18 Breakdown Voltage I = 10 m A 15 25 Noise Equivalent Power VR = 10 mV @ Peak Response Time RL = 1 KΩ VR = 5 V 2.2x10 58 nm A/W V -14 W/ Hz nS Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. **f = 1 MHz [FORM NO. 100-PDU-C119-Q REV A]
PDU-C119Q
物料型号:PDU-C119-Q

器件简介:PDU-C119-Q是一款硅PIN平面扩散型紫外增强光电二极管,适用于高速光电导紫外应用,封装在带有平面石英窗口盖的TO-5金属罐中。

引脚分配:文档中未明确列出引脚分配,但通常TO-5封装具有中心阳极和环形阴极。

参数特性: - 绝对最大额定值包括反向电压30V,存储温度范围-55℃至+150℃,工作温度范围-40℃至+125℃,焊接温度最高+240℃,最大光电流500mA。 - 光谱响应范围为190nm至1100nm。 - 电光特性包括短路电流、暗电流、并联电阻、并联电阻温度系数、结电容、光谱应用范围、响应度、击穿电压、噪声等效功率和响应时间。

功能详解:该光电二极管具有高速紫外增强的石英窗口,适用于光谱仪、荧光分析仪和色度计等应用。

应用信息:适用于高速紫外增强应用,如光谱仪、荧光分析仪和色度计。

封装信息:TO-5金属罐封装,带有平面石英窗口盖。
PDU-C119Q 价格&库存

很抱歉,暂时无法提供与“PDU-C119Q”相匹配的价格&库存,您可以联系我们找货

免费人工找货