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PDU-V108

PDU-V108

  • 厂商:

    LUNAOPTOELECTRONICS(Luna Optoelectronics)

  • 封装:

    TO8-3

  • 描述:

    PHOTODIODE UV 31.00MM SQ TO-8

  • 详情介绍
  • 数据手册
  • 价格&库存
PDU-V108 数据手册
PHOTONIC DETECTORS INC. Silicon Photodiode, U.V. Enhanced Photovoltaic Type PDU-V108 PACKAGE DIMENSIONS INCH [mm] 0.215 [5.46] Ø0.483 [12.27] 0.065 [1.65] Ø0.449 [11.39] 1.500 [38.10] WIRE BONDS CL 69° VIEWING ANGLE Ø0.550 [13.97] 0.295 [7.49] ANODE Ø0.018 [0.46] CL CATHODE Ø0.018 [0.46] HEADER PHOTODIODE WINDOW CAP (WELDED) 0.265 [6.74] SQUARE 0.2472 [6.289] ACTIVE AREA TO-8 HERMETIC PACKAGE ACTIVE AREA = 31.00 mm2 DESCRIPTION The PDU-V108 is a silicon, PIN planar diffused, U.V. enhanced photodiode. Ideal for low noise photovoltaic applications. Packaged in a hermetic TO-8 metal can with a flat quartz window. Light Current O 0.5 C mA 0 .3 0 .2 0 .1 0 *1/16 inch from case for 3 secs max WAVELENGTH (nm) ELECTRO-OPTICAL CHARACTERISTICS (TA=25OC unless otherwise noted) SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP ISC Short Circuit Current ID Dark Current H = 0, VR = 10 mV Shunt Resistance H = 0, VR = 10 mV TC RSH RSH Temp. Coefficient CJ Junction Capacitance RSH λrange H = 100 fc, 2850 K 375 10 UNITS mA 50 pA 1 GΩ H = 0, VR = 10 mV -8 % / oC H = 0, VR = 0 V** 2500 pF .2 Spot Scan 190 Responsivity VR = 0 V, l = 254 nm .12 V BR Breakdown Voltage I = 10 mA N EP Noise Equivalent Power VR = 10 mV @ Peak 5x10-14 Response Time RL = 1 KΩ VR = 0 V 950 tr MAX 430 Spectral Application Range R 1200 IL +240 C % 1100 Soldering Temperature* +125 C 00 900 TS -40 O =1 1000 Operating Temperature Range O QE 0 .4 800 TO +150 0 .5 700 -55 0 .6 600 Storage Temperature V 500 75 400 TSTG Reverse Voltage 300 V BR SPECTRAL RESPONSE 0 .7 190 ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL PARAMETER MIN MAX UNITS APPLICATIONS Spectrometers Fluorescent analysers U.V. meters Colorimeters RESPONSIVITY (A/W) FEATURES Low noise U.V. enhanced High shunt resistance Quartz windows 5 1100 .18 nm A/W 10 V W/ Hz nS Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice.**f = 1 MHz [FORM NO. 100-PDU-V108 REV N/C]
PDU-V108
物料型号为PDU-V108,是一款硅基平面扩散型紫外增强光伏探测器。

器件简介指出,PDU-V108具有低噪声、高旁路电阻和石英窗口,适用于低噪声光伏应用,并且封装在带有平面石英窗口的密封TO-8金属罐中。


引脚分配如下: - 阳极(ANODE):Ø0.018 [0.46] mm - 阴极(CATHODE):Ø0.018 [0.46] mm

参数特性包括: - 反向电压(VBR):最大75V - 存储温度(TSTG):-55℃至+150℃ - 工作温度范围(To):-40℃至+125℃ - 焊接温度(Ts):最大+240℃ - 光电流(Light Current):最大0.5mA

功能详解: - 光谱响应:在190nm至1100nm范围内具有响应性 - 响应度(Responsivity):在254nm以上波长时,典型值为0.18 A/W - 噪声等效功率(NEP):在10mV峰值时,典型值为5x10^-14 W/Hz - 响应时间(tr):在1kHz下,典型值为950ns

应用信息包括光谱仪、荧光分析仪、紫外计和色度计。


封装信息为TO-8金属罐,具有31.00 mm²的活性区域,并且有一个焊接的石英窗口。


以上信息基于PDF文档提供的数据表,并且规格如有更改,恕不另行通知。
PDU-V108 价格&库存

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