PDB-V448

PHOTONIC Silicon Photodiode, Filter Combination Photovoltaic (center wavelength 488 nm) Type PDB-V448 DETECTORS INC. EPOXY COVERING EYELET PACKAGE DIMENSIONS INCH [mm] WIRE BONDS EPOXY MARKING INK (WAVE LENGTH NO.) ACTIVE AREA SURFACE +- 0.005 [0.13] 0.080 [2.03] 0.200 [5.08] DIA PIN CIRCLE 0.365 [9.27] 0.355 [9.02] DIA 0.345 [8.76] 0.335 [8.51] 0.245 [6.22] 0.235 [5.97] DIA 0.500 [12.70] CHIP 0.330 [8.38] 0.320 [8.13] DIA 45° 0.020 [0.51] DIA 2 PLACES 0.035 [0.89] 0.030 [0.76] FILTER CAP SUBASSEMBLY ANODE CATHODE (CASE GROUND) HEADER 0.425 [10.80] 0.415 [10.54] ACTIVE AREA 0.223 [5.66] 0.123 [3.12] 0.135 [3.43] ACTIVE AREA TO-5 CAN PACKAGE 0.235 [5.97] ACTIVE AREA = 17.74 mm2 FEATURES High transmission 10-4 rejection +/- 2nm CWL DESCRIPTION The PDB-V448 is a silicon, PIN planar diffused, photodiode with a narrow band interferance filter. The detector filter combination has a narrow 10 nm half bandwidth designed for low noise photovoltaic applications. Packaged in a TO-5 metal can. ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL PARAMETER MIN MAX UNITS C +240 O C Soldering Temperature* Light Current 0.5 mA 0.3 0.2 0.1 0 *1/16 inch from case for 3 secs max FWHM = 10 nm @ 45% Tx MIN 1200 O 1100 +70 900 -15 1000 C Operating Temperature Range 0% 10 800 O = 700 +85 QE 0.4 600 -20 0.5 500 IL Storage Temperature 0.6 400 TS V SPECTRAL RESPONSE 0.7 300 TO 100 Liquid chromatography 190 TSTG Reverse Voltage Chemistry instrumentation RESPONSIVITY (A/W) V BR APPLICATIONS Spectrophotometry WAVELENGTH (nm) ELECTRO-OPTICAL CHARACTERISTICS (TA=25 C unless otherwise noted) SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP O ISC Short Circuit Current*** H = 100 fc, 2850 K ID Dark Current H = 0, V R = 10 mV 150 MAX mA 200 10 UNITS 50 pA Shunt Resistance H = 0, V R = 10 mV 2 GΩ TC RSH RSH Temp. Coefficient H = 0, V R = 10 mV -8 % / oC CJ RSH .20 Junction Capacitance H = 0, V R = 10 V** 1700 pF CWL Center Wavelength (CWL, lo) +/- 2 nm 488 nm HBW Half Bandwidth (FWHM) 10 nm V BR Breakdown Voltage I = 10 m A N EP tr 50 75 Noise Equivalent Power V R = 10 mV @ Peak 9x10 Response Time RL = 1 KΩ V R = 10 V 1.0 V -15 W/ Hz µS Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice.**f = 1 MHz, ***without filter [FORM NO. 100-PDB-V448 REV B]