PDU-V425

PHOTONIC Silicon Photodiode, Filter Combination Photovoltaic (center wavelength 254 nm) Type PDU-V425 DETECTORS INC. EPOXY COVERING EYELET PACKAGE DIMENSIONS INCH [mm] WIRE BONDS EPOXY MARKING INK (WAVE LENGTH NO.) ACTIVE AREA SURFACE +- 0.005 [0.13] 0.080 [2.03] 0.200 [5.08] DIA PIN CIRCLE 0.365 [9.27] 0.355 [9.02] DIA 0.345 [8.76] 0.335 [8.51] 0.245 [6.22] 0.235 [5.97] DIA 0.500 [12.70] CHIP 0.330 [8.38] 0.320 [8.13] DIA 45° 0.020 [0.51] DIA 2 PLACES 0.035 [0.89] 0.030 [0.76] FILTER CAP SUBASSEMBLY ANODE CATHODE (CASE GROUND) HEADER 0.425 [10.80] 0.415 [10.54] ACTIVE AREA 0.223 [5.66] 0.123 [3.12] 0.135 [3.43] ACTIVE AREA TO-5 CAN PACKAGE 0.235 [5.97] ACTIVE AREA = 17.74 mm2 FEATURES High transmission 10-4 rejection +/- 2nm CWL +70 O C TS Soldering Temperature* +240 O C IL Light Current 0.5 mA 0.3 0.2 0.1 0 *1/16 inch from case for 3 secs max 10 nm @ 50% 1200 -15 1100 Operating Temperature Range 900 C TO 0% 10 1000 O = 800 +85 QE 0.4 700 -20 0.5 600 Storage Temperature TSTG 0.6 500 V SPECTRAL RESPONSE 0.7 400 50 Liquid chromatography 300 Reverse Voltage Chemistry instrumentation 190 V BR APPLICATIONS Spectrophotometry RESPONSIVITY (A/W) DESCRIPTION The PDU-V425 is a silicon, PIN planar diffused, U.V. enhanced photodiode with a narrow bandpass filter. The detector filter combination has a narrow 10 nm half bandwidth designed for low noise photovoltaic applications. Packaged in a TO-5 metal can. ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL PARAMETER MIN MAX UNITS WAVELENGTH (nm) ELECTRO-OPTICAL CHARACTERISTICS (TA=25 C unless otherwise noted) SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP O ISC Short Circuit Current*** H = 100 fc, 2850 K ID Dark Current H = 0, V R = 10 mV 200 MAX mA 230 335 UNITS 550 nA Shunt Resistance H = 0, V R = 10 mV 1 GΩ TC RSH RSH Temp. Coefficient H = 0, V R = 10 mV -8 % / oC CJ RSH .20 Junction Capacitance H = 0, V R = 10 V** 2000 pF CWL Center Wavelength (CWL, lo) +/- 2 nm 254 nm HBW Half Bandwidth (FWHM) 10 nm V BR Breakdown Voltage I = 10 m A N EP tr 30 50 V -14 Noise Equivalent Power V R = 10 mV @ Peak 2x10 Response Time RL = 1 KΩ V R = 10 V 900 W/ Hz nS Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice.**f = 1 MHz, ***without filter [FORM NO. 100-PDU-V425 REV A]