PDI-V495

PHOTONIC Silicon Photodiode, Filter Combination Photovoltaic (center wavelength 950 nm) Type PDI-V495 DETECTORS INC. EPOXY COVERING EYELET PACKAGE DIMENSIONS INCH [mm] WIRE BONDS EPOXY MARKING INK (WAVE LENGTH NO.) ACTIVE AREA SURFACE +- 0.005 [0.13] 0.080 [2.03] 0.200 [5.08] DIA PIN CIRCLE 0.365 [9.27] 0.355 [9.02]DIA 0.345 [8.76] 0.335 [8.51] 0.245 [6.22] 0.235 [5.97] DIA 0.500 [12.70] CHIP 0.330 [8.38] 0.320 [8.13] DIA 45° 0.020 [0.51] DIA 2 PLACES 0.035 [0.89] 0.030 [0.76] FILTER CAP SUBASSEMBLY ANODE CATHODE (CASE GROUND) HEADER 0.425 [10.80] 0.415 [10.54] ACTIVE AREA 0.223 [5.66] 0.123 [3.12] ACTIVE AREA 0.135 [3.43] TO-5 CAN PACKAGE 0.235 [5.97] ACTIVE AREA = 17.74 mm2 FEATURES High transmission 10-4 rejection +/- 2nm CWL DESCRIPTION The PDI-V495 is a silicon, PIN planar diffused, photodiode with a wide band interferance filter. The detector filter combination has a wide 65 nm half bandwidth Match to 940 nm LED designed for low noise photovoltaic applications. Packaged in a TO-5 metal can. ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL PARAMETER MIN MAX UNITS mA 0.1 0 *1/16 inch from case for 3 secs max WAVELENGTH (nm) ELECTRO-OPTICAL CHARACTERISTICS (TA=25OC unless otherwise noted) SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP ISC Short Circuit Current*** H = 100 fc, 2850 K ID Dark Current H = 0, VR = 10 mV Shunt Resistance H = 0, VR = 10 mV TC RSH RSH Temp. Coefficient CJ 150 MAX mA 200 10 UNITS 50 pA 2 GΩ H = 0, VR = 10 mV -8 % / oC Junction Capacitance H = 0, VR = 10 V** 1700 pF CWL Center Wavelength (CWL, lo) +/- 2 nm 950 nm HBW Half Bandwidth (FWHM) 65 nm Breakdown Voltage I = 10 m A RSH V BR N EP tr 1200 0.5 C 1100 Light Current O FWHM = 65 nm @ 75% Tx MIN 0.2 900 IL +240 C 0.3 1000 Soldering Temperature* +70 C 800 TS -15 O 0% 700 Operating Temperature Range O 0 =1 QE 0.4 600 TO +85 0.5 500 -20 0.6 400 Storage Temperature V 0.7 300 100 SPECTRAL RESPONSE 190 TSTG Reverse Voltage Chemistry instrumentation RESPONSIVITY (A/W) V BR APPLICATIONS I.R. sensor GaAs LED sensor Spectrophotometry Noise Equivalent Power VR = 10 mV @ Peak Response Time RL = 1 KΩ VR = 10 V .20 50 75 V -15 9x10 1.0 W/ Hz µS Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice.**f = 1 MHz, ***without filter [FORM NO. 100-PDI-V495 REV C]