PDU-716-100

PHOTONIC DETECTORS INC. Detector Amplifier Hybrid, U.V. Enhanced Type PDU-716-100 PACKAGE DIMENSIONS INCH [mm] UV WINDOW CAP (WELDED) ACTIVE AREA SURFACE .090 [2.29] ±.005 [0.13] .085 [2.15] .075 [1.90] 82° VIEWING ANGLE Ø.330 [8.38] Ø.320 [8.13] Ø.200 [5.08] PIN CIRCLE PIN 5. CASE SHIELD .500 [12.70] PIN 4. V+ Ø.20 [0.50] 5 PLACES .035 [0.89] .030 [0.76] FLANGE .175 [4.44] .165 [4.19] 0.110 [2.79] SQ Ø0.100 [ Ø2.54] ACTIVE AREA PIN 1. CIRCUIT GROUND PIN 3. V- Ø.365 [Ø9.27] Ø.355 [Ø9.02] PIN 2. OUTPUT TO-5 HERMETIC CAN PACKAGE WARNING: ESD SENSITIVE DEVICE ACTIVE AREA = 5.07 mm2 500 C mA 0.1 0 1200 Light Current O 1100 IL +240 0.2 900 Soldering Temperature* C 0.3 1000 TS +70 O 0 C 800 Operating Temperature Range O 700 TO +125 0.4 600 -55 % 00 =1 E Q 0.5 500 Storage Temperature V 400 15 0.6 300 TSTG Reverse Voltage 0.7 190 ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL PARAMETER MIN MAX UNITS V BR APPLICATIONS Medical diagnostic Low signal applications Color analysis Analytical chemistry SPECTRAL RESPONSE DESCRIPTION: The PDU-716-100 is a low noise, medium speed, U.V. enhanced silicon photodiode integrated with a low noise JFET monolithic transimpedance op-amp. There is an internal 100 MOhm feedback gain resistor which limits the bandwidth to 10KHz. RESPONSIVITY (A/W) FEATURES 10 Khz bandwidth Internal100 MOhm gain Low offset voltage Low input bias current WAVELENGTH (nm) *1/16 inch from case for 3 secs max PHOTODIODE ELECTRO-OPTICAL CHARACTERISTICS (TA=25OC unless otherwise noted) SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS ISC Short Circuit Current H = 100 fc, 2850 K ID Dark Current H = 0, V R = 10 V Shunt Resistance H = 0, V R = 10 mV TC RSH RSH Temp. Coefficient CJ Junction Capacitance RSH λrange R V BR NEP tr 45 mA 65 1.0 5.0 nA 2 GΩ H = 0, V R = 10 mV -8 % / oC H = 0, V R = 10 V** 15 pF Spectral Application Range Spot Scan Responsivity VR = 0 V, l = 254 nm Breakdown Voltage I = 10 m A Noise Equivalent Power VR = 10 V @ Peak Response Time RL = 1 KΩ VR = 10 V .5 190 1100 1.2 1.8 5 10 2.5x10 15 nm A/W V -14 W/ Hz nS Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. ** f = 1 MHz PAGE 1 OF 2 [FORM NO. 100-PDU-716-100 REV A] PHOTONIC DETECTORS INC. AMPLIFIER SPECIFICATION Detector Amplifier Hybrid, U.V. Enhanced Type PDU-716-100 TA = 25° C and VS =± 15 vdc UNLESS OTHERWISE NOTED CHARACTERISTIC TEST CONDITIONS FEEDBACK NETWORK 100 MEG Ω RESISTOR, 1 pF CAPACITOR* THIN FILM RESISTOR TRIMMED TO ±5% *TOL ±5% VIO INPUT OFFSET VOLTAGE IIB INPUT BIAS CURRENT AVD OPEN LOOP GAIN VOM±OUTPUT CHARACTERISTICS VCC± POWER SUPPLY 0.6 UNITS MEG Ω 3.9 mV .04 µV/MONTH OFFSET CURRENT, VCM=0 4 pA DIFFERENTIAL 1 X 10-12 COMMONMODE 1 X 10-12 Ω COMMONMODE −12 +16 V COMMONMODE REJECTION, R S= 50 W 72 90 dB VOLTAGE 0, f=1 KHz 2 µVPP VOLTAGE 0, f=10 KHz 40 nV/√Hz f=1 KHz 1 fA / √Hz UNITY GAIN, SMALL SIGNAL RL= 10 KW CL= 100 pF 2 MHz IN INPUT CURRENT NOISE BOM FREQUENCY RESPONSE MAX LONG TERM OFFSET STABILITY VICR INPUT VOLTAGE RANGE VN(PP) INPUT VOLTAGE NOISE TYP 100 INITIAL OFFSET FULL RANGE Ri INPUT RESISTANCE CMRR COMMON MODE REJECTION RATIO MIN SLEW RATE, UNITY GAIN 2.6 3.4 V/µs vo= ±10 V, RL=10 KΩ 20 230 V/mV VOLTAGE @ RL=10 K Ω ±13.2 ±13.7 V VOLTAGE @ RL= 600 Ω ±12.5 ±13 V OPERATING RANGE ±3.5 ±15 AMPLIFIER ABSOLUTE MAXIMUM RATING (TA=25°C UNLESS OTHERWISE NOTED) PARAMETER MIN MAX UNITS SUPPLY VOLTAGE ±4.5 ±18 V 500 mW INTERNAL POWER DISSIPATION STORAGETEMPERATURE -55 +150 °C OPERATINGTEMPERATURE 0 +70 °C ±18 V WARNING: ESD SENSITIVE DEVICE Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications [FORM NO. 100-PDU-716-100 REV A] are subject to change without notice. PAGE 2 OF 2