PDB-V443.6

PHOTONIC Silicon Photodiode, Filter Combination Photovoltaic DETECTORS INC. (center wavelength 436 nm) Type PDB-V443.6 EPOXY COVERING EYELET PACKAGE DIMENSIONS INCH [mm] WIRE BONDS EPOXY MARKING INK (WAVE LENGTH NO.) ACTIVE AREA SURFACE + 0.005 [0.13] 0.080 [2.03] 0.200 [5.08] DIA PIN CIRCLE 0.365 [9.27] DIA 0.355 [9.02] 0.345 [8.76] 0.335 [8.51] 0.245 [6.22] DIA 0.235 [5.97] 0.500 [12.70] CHIP 0.330 [8.38] DIA 0.320 [8.13] 45° 0.020 [0.51] DIA 2 PLACES 0.035 [0.89] 0.030 [0.76] FILTER CAP SUBASSEMBLY ANODE CATHODE (CASE GROUND) HEADER 0.425 [10.80] 0.415 [10.54] ACTIVE AREA 0.223 [5.66] 0.123 [3.12] ACTIVE AREA 0.135 [3.43] 0.235 [5.97] TO-5 CAN PACKAGE ACTIVE AREA = 17.74 mm2 DESCRIPTION The PDB-V443.6 is a silicon, PIN planar diffused, photodiode with a narrow band interference filter. The detector filter combination has a narrow 10 nm half bandwidth designed for low noise photovoltaic applications. Packaged in a TO-5 metal can. -15 +70 O TS Soldering Temperature* +240 O IL Light Current C C mA 0.3 0.2 0.1 FWHM = 10 nm @ 45% Tx MIN 0 *1/16 inch from case for 3 secs max WAVELENGTH (nm) ELECTRO-OPTICAL CHARACTERISTICS (TA=25OC unless otherwise noted) SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP ISC Short Circuit Current*** H = 100 fc, 2850 K ID Dark Current H = 0, V R = 10 mV Shunt Resistance H = 0, V R = 10 mV TC RSH RSH Temp. Coefficient CJ 150 MAX mA 200 10 UNITS 50 pA 2 GΩ H = 0, V R = 10 mV -8 % / oC Junction Capacitance H = 0, VR = 10 V** 1700 pF CWL Center Wavelength (CWL, l o) +/- 2 nm 436 nm HBW Half Bandwidth (FWHM) 10 nm V BR Breakdown Voltage I = 10 m A NEP Noise Equivalent Power VR = 10 mV @ Peak Response Time RL = 1 KΩ VR = 10 V RSH tr 1200 Operating Temperature Range 1100 TO 500 C 900 O 1000 +85 800 -20 0.4 700 Storage Temperature % 00 =1 E Q 0.5 600 V 0.6 500 100 SPECTRAL RESPONSE 0.7 400 TSTG Reverse Voltage Liquid chromatography 300 V BR Chemistry instrumentation 190 ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL PARAMETER MIN MAX UNITS APPLICATIONS Spectrophotometry RESPONSIVITY (A/W) FEATURES 436 +/- 2 nm CWL 10 nm FWHM 45% transmission 10-4 rejection .20 50 75 V 9x10 -15 1.0 W/ Hz µS Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice.**f = 1 MHz, ***without filter [FORM NO. 100-PDB-V443.6 REV N/C]