SIT5000AC-2E-18E0-38.400000T

SIT5000AC-2E-18E0-38.400000T

  • 厂商:

    SITIME(赛特时脉)

  • 封装:

    SMD3225_4P

  • 描述:

    有源晶振 SMD3225_4P

  • 详情介绍
  • 数据手册
  • 价格&库存
SIT5000AC-2E-18E0-38.400000T 数据手册
SiT5000 Standard Frequency MEMS (VC)TCXO The Smart Timing Choice The Smart Timing Choice Features Applications  27 standard frequencies between 10 MHz and 40 MHz  WiFi, 3G, LTE, SDI, Ethernet, SONET, DSL  100% pin-to-pin drop-in replacement to quartz-based (VC)TCXO  Telecom, networking, smart meter, wireless, test instrumentation  Frequency stability as low as ±5 ppm. Contact SiTime for tighter stability options  Low phase jitter: 0.5 ps (12 kHz to 20 MHz)  LVCMOS compatible output with SoftEdge™ option for EMI reduction  Voltage control, standby, output enable or no connect modes  Standard 4-pin packages: 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm  Outstanding silicon reliability of 2 FIT, 10 times better than quartz  Pb-free, RoHs and REACH compliant Electrical Characteristics Parameter Output Frequency Range Symbol f Min. Typ. Max. Refer to the frequency list (page 6) Unit Condition MHz 27 standard frequencies between 10 MHz and 40 MHz Initial Tolerance F_init -1.5 – +1.5 ppm At 25°C after two reflows Stability Over Temperature F_stab -5 – +5 ppm Over operating temperature range at rated nominal power supply voltage and load. (see ordering codes on page 6) Supply Voltage F_vdd – 50 – ppb ±10% Vdd (±5% for Vdd = 1.8V) Output Load F_load – 0.1 – ppm 15 pF ±10% of load First year Aging F_aging Contact SiTime for tighter stability options. 10-year Aging Operating Temperature Range Supply Voltage Pull Range T_use Vdd -2.5 – +2.5 ppm 25°C -4.0 – +4.0 ppm 25°C -20 – +70 °C Extended Commercial -40 – +85 °C Industrial 1.71 1.8 1.89 V Contact SiTime for any other supply voltage options. 2.25 2.5 2.75 V 2.52 2.8 3.08 V 2.70 3.0 3.3 V 2.97 3.3 3.63 V PR ±12.5 ppm Upper Control Voltage VC_U Vdd-0.1 – – V Control Voltage Range VC_L – – 0.1 V Control Voltage Input Impedance Z_vc 100 – – k Frequency Change Polarity Control Voltage -3dB Bandwidth Current Consumption – – – 8 kHz Idd – 31 33 mA No load condition, f = 20 MHz, Vdd = 2.5V, 2.8V or 3.3V. – 29 31 mA No load condition, f = 20 MHz, Vdd = 1.8V. – – 31 mA Vdd = 2.5V, 2.8V or 3.3V, OE = GND, output is Weakly Pulled Down – – 30 mA Vdd = 1.8 V. OE = GND, output is Weakly Pulled Down – – 70 µA Vdd = 2.5V, 2.8V or 3.3V, ST = GND, output is Weakly Pulled Down. – – 10 µA Vdd = 1.8V. ST = GND, output is Weakly Pulled Down. 45 – 55 % All Vdds – 1.5 2 I_OD Standby Current I_std LVCMOS Rise/Fall Time – V_BW OE Disable Current Duty Cycle Positive slope All Vdds. Voltage at which maximum deviation is guaranteed. DC Tr, Tf SoftEdge™ Rise/Fall Time Table SoftEdge™ Rise/Fall Time ns LVCMOS option. Default rise/fall time, All Vdds, 10% - 90% Vdd. ns SoftEdge™ option. Frequency and supply voltage dependent. Output Voltage High VOH 90% – – Vdd Output Voltage Low VOL – – 10% Vdd Input Voltage High VIH 70% – – Vdd Pin 1, OE or ST Input Voltage Low VIL – – 30% Vdd Pin 1, OE or ST Input Pull-up Impedance Z_in – 100 250 k SiTime Corporation Rev. 1.0 990 Almanor Avenue Sunnyvale, CA 94085 OH = -7 mA, IOL = 7 mA, (Vdd = 3.3V, 3.0V) IOH = -4 mA, IOL = 4 mA, (Vdd = 2.8V, 2.5V) IOH = -2 mA, IOL = 2 mA, (Vdd = 1.8V) (408) 328-4400 www.sitime.com Revised November 12, 2015 SiT5000 Standard Frequency MEMS (VC)TCXO The Smart Timing Choice The Smart Timing Choice Electrical Characteristics (continued) Parameter Startup Time OE Enable/Disable Time Symbol Min. Typ. Max. Unit Condition T_start – – 10 ms Measured from the time Vdd reaches its rated minimum value f = 80 MHz. For other frequencies, T_oe = 100 ns + 3 cycles T_oe – – 150 ns T_resume – 6 10 ms Measured from the time ST pin crosses 50% threshold RMS Period Jitter T_jitt – 1.7 2 ps f = 10 MHz, Vdd = 2.5V, 2.8V or 3.3V – 1.7 2 ps f = 10 MHz, Vdd = 1.8V RMS Phase Jitter (random) T_phj – 0.5 1 ps f = 10 MHz, Integration bandwidth = 12 kHz to 20 MHz, All Vdds Resume Time Note: 1. All electrical specifications in the above table are measured with 15pF output load, Contact SiTime for higher drive options. Pin Configuration Pin Symbol Functionality V control 1 Voltage control Top View Output Enable H or Open[2]: specified frequency output L: output is high impedance. Only output driver is disabled. Standby H or Open[2]: specified frequency output L: output is low (weak pull down). Device goes to sleep mode. Supply current reduces to I_std. VC/OE/ST/NC NC VC/OE/ST 1 4 VDD GND 2 3 OUT No connect (input receiver off) 2 GND Power Electrical and case ground 3 CLK Output Oscillator output 4 VDD Power Power supply voltage Note: 2. A pull-up resistor of
SIT5000AC-2E-18E0-38.400000T
物料型号:SiT5000

器件简介:SiT5000是一款标准频率的MEMS (VC)TCXO,提供27种标准频率从10 MHz到40 MHz,具有100%引脚对引脚替代石英基(VC)TCXO的能力。适用于WiFi、3G、LTE、SDI、Ethernet、SONET、DSL等领域。

引脚分配: - 1号引脚:VC/OE/ST/NC,用于电压控制、输出使能、待机或不连接。 - 2号引脚:GND,电源和机箱地。 - 3号引脚:CLK,振荡器输出。 - 4号引脚:VDD,电源电压。

参数特性: - 初始容差:-1.5 ppm至+1.5 ppm - 温度稳定性:-5 ppm至+5 ppm - 供电电压:1.71 V至3.63 V - 输出负载:0.1 ppm - 首年老化:-2.5 ppm至+2.5 ppm - 10年老化:-4.0 ppm至+4.0 ppm - 工作温度范围:-20°C至+70°C(扩展商业级)或-40°C至+85°C(工业级)

功能详解: - SiT5000提供低相位抖动(0.5 ps)和LVCMOS兼容的输出,具有SoftEdge™选项用于减少电磁干扰(EMI)。 - 电压控制、待机、输出使能或无连接模式。 - 出色的硅可靠性,达到2 FIT,比石英好10倍。 - Pb-free,RoHS和REACH合规。

应用信息: - 适用于电信、网络、智能电表、无线、测试仪器等领域。

封装信息: - 标准4引脚封装:2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm。
SIT5000AC-2E-18E0-38.400000T 价格&库存

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SIT5000AC-2E-18E0-38.400000T
  •  国内价格 香港价格
  • 3000+15.489863000+1.98831

库存:0