US-Lasers: 808nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module
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US-Lasers: 808nm-5mW - Infrared Laser Diode
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INFRARED DIODE LASER DATA SHEETS
ABSOLUTE MAXIMUM RATINGS - (Tc=25 °C)
TECHNICAL DATA for LASER DIODE
z
Index Guided MQW Structure
z
Wavelength: 808nm (Typ.)
z
Optical Power: 5mW CW
z
Threshold Current: 25mA (Typ.)
z
Standard Package: 5.6mm
Infrared light output
Pin Out Diagram - Style A
808nm
Optical power output
5mW CW
Package Type
5.6mm
Built-in photo diode for monitoring laser output
Items
Optical output power
Laser diode reverse voltage
Photo diode reverse voltage
Operating temperature
Storage temperature
Symbols
Po
VLDR
VPDR
Topr
Tstg
Values
5
2
30
-10 ~ +40
-40 ~ +85
Unit
mW
V
V
°C
°C
OPTICAL and ELECTRICAL CHARACTERISTICS - (Tc=25 ºC)
Items
Optical output power
Threshold current
Operating current
Operating voltage
Lasing wavelength
Beam divergence
Beam divergence
Slope Efficiency (mW/mA)
Monitor current
Astigmatism
Symbols
Po
Ith
Iop
Vop
8D
θF
θz
0
Im
As
MTTF
Emitter Size
Emitter Distance to Cap Lens
Structure
Min.
10
15
1.9
800
8
20
0.1
10
-
Typ.
5
20
25
2.1
808
11
35
0.3
100
11
3000-5,000
hrs.
Max.
35
45
2.5
820
15
45
0.6
200
-
Unit
mW
mA
mA
V
nm
deg
deg
µA
µm
Test Condition
Po=5mW
Po=5mW
Po=5mW
Po=5mW
Po=5mW
Po=5mW,Vr=5V
Po=5mW
Po=5mW,NA=0.4
1 x 4 Microns
0.3mm
Index Guided
http://www.us-lasers.com/n808nm5m.htm
4/6/2009
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