MM8505I

US-Lasers: 850nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module Page 1 of 1 US-Lasers: 850nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module Links to Laser Diode & Laser Module Configurations and Specifications >>>>>>>>>> Barrel Specs: Laser Diode Laser Diode Module Micro Laser Module Variable Output Laser Diode Module MM850-5 Weight & Wire Lengths: Lens Housing Specs: z 2 Pieces z Module with 6" wire leads - 49 grain wt.b z 12 - 56 Thread Size z 12 - 56 Thread Size z Module without 6" wire leads - 42 grain wt z 3.0mm Aperture z Dia: 6.4mm z Module with spring leads - 42 1/2 grain wt. z 4.0mm Plastic Lens z Length: 17mm z Spring 2.4mm dia. 4mm long (trimmable) INFRARED DIODE LASER ABSOLUTE MAXIMUM RATINGS - (Tc=25 °C) TECHNICAL DATA for LASER DIODE z Index Guided MQW Structure z Wavelength: 850nm (Typ.) z Optical Power: 5mW CW z Threshold Current: 20mA (Typ.) z Standard Package: 5.6mm Infrared light output Pin Out Diagram - Style A 850nm Optical power output 5mW CW Package Type 5.6mm Built-in photo diode for monitoring laser output Items Optical output power Laser diode reverse voltage Photo diode reverse voltage Operating temperature Storage temperature Symbols Po VLDR VPDR Topr Tstg Values 5 2 30 -10 ~ +40 -40 ~ +85 Unit mW V V °C °C OPTICAL and ELECTRICAL CHARACTERISTICS - (Tc=25 ºC) Items Optical output power Threshold current Operating current Operating voltage Lasing wavelength Beam divergence Beam divergence Slope Efficiency (mW/mA) Monitor current Astigmatism Symbols Po Ith Iop Vop 8D θF θz 0 Im As MTTF Emitter Size Emitter Distance to Cap Lens Structure Min. 10 15 2.0 840 8 25 0.4 10 - Typ. 5 20 25 2.4 850 10 31 0.5 100 11 3000-5,000 hrs. Max. 35 45 2.7 860 11 40 0.7 200 - Unit mW mA mA V nm deg deg µA µm Test Condition Po=5mW Po=5mW Po=5mW Po=5mW Po=5mW Po=5mW,Vr=5V Po=5mW Po=5mW,NA=0.4 1 x 4 Microns 0.3mm Index Guided http://www.us-lasers.com/mmn850nm5m.htm 4/7/2009