MM8085I

MM8085I

  • 厂商:

    US-LASERSINC.

  • 封装:

    Module

  • 描述:

    MM8085I

  • 数据手册
  • 价格&库存
MM8085I 数据手册
US-Lasers: 808nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module Page 1 of 1 US-Lasers: 808nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module Links to Laser Diode & Laser Module Configurations and Specifications >>>>>>>>>> Laser Diode Laser Diode Module Micro Laser Module N808-5 NM808-5 MM808-5 Variable Output Laser Diode Module DATA SHEETS .... MM808nm 5mW ....IR LASER MODULE & DIODE Barrel Specs: Weight & Wire Lengths: Lens Housing Specs: z 2 Pieces z Module with 6" wire leads - 49 grain wt.b z 12 - 56 Thread Size z 12 - 56 Thread Size z Module without 6" wire leads - 42 grain wt z 3.0mm Aperture z Dia: 6.4mm z Module with spring leads - 42 1/2 grain wt. z 4.0mm Plastic Lens z Length: 17mm z Spring 2.4mm dia. 4mm long (trimmable) IR LASER DIODE DATA SHEET ABSOLUTE MAXIMUM RATINGS - (Tc=25 °C) TECHNICAL DATA 808nm IR light output Optical power output 5mW CW Package Type 5.6mm Built-in photo diode for monitoring laser output Pin Out Diagram Items Symbols Values Unit Optical output power Po 5 mW Laser diode reverse voltage V 2 V Photo diode reverse voltage V 30 V Operating temperature Topr -10 ~ +45 °C Storage temperature Tstg -40 ~ +85 °C OPTICAL and ELECTRICAL CHARACTERISTICS - (Tc=25 ºC) Test Condition Items Symbols Min. Typ. Max. Unit Po 5 mW Optical output power Threshold current Ith 25 40 mA Iop 35 50 mA Po=5mW Operating current Vop 2.5 V Po=5mW Operating voltage Lasing wavelength 803 808 813 nm Po=5mW Beam divergence 5 11 deg Po=5mW Beam divergence 25 37 deg Po=5mW Im 10 20 uA Po=5mW Monitor current Astigmatism As 5 um Po=5mW 3-5,000 hrs. Po=5mW MTTF Emitter Size 10 x 60 Microns - Emitter Distance to Cap Lens = 0.3mm Structure Index Guided http://www.us-lasers.com/mmd808nm5m.htm 4/7/2009
MM8085I 价格&库存

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