M850-30

M850-30

  • 厂商:

    US-LASERSINC.

  • 封装:

    Ф10.4mm

  • 描述:

    M850-30

  • 数据手册
  • 价格&库存
M850-30 数据手册
US-Lasers: 850nm-30mW - IR LASER DIODE and IR DIODE LASER MODULE Page 1 of 2 US-Lasers: 850nm-30mW - Infrared Laser Diode and Infrared Diode Laser Module Back To Laser Modules TECHNICAL DATA for LASER MODULE Barrel Specs: z z z 3/8 - 56 Thread Size Dia: 10.4mm Length: 17mm Collect Specs: z z z Lens Housing Specs: 3/8 - 56 Thread Size 4.3mm Aperature Half Hard Brassbbb IR LASER DIODE DATA SHEET z z z 3/8 - 56 Thread Size 3.7mm Aperture 7mm Plastic Lens ABSOLUTE MAXIMUM RATINGS - (Tc=25 °C) TECHNICAL DATA IR light output 850nm Optical power output 30mW CW Package Type 5.6mm Built-in photo diode for monitoring laser output Pin Out Diagram Items Symbols Values Unit Optical output power Po 30 mW Laser diode reverse voltage V 2 V Photo diode reverse voltage V 30 V Operating temperature Topr -10 ~ +50 °C Storage temperature Tstg -40 ~ +85 °C OPTICAL and ELECTRICAL CHARACTERISTICS - (Tc=25 ºC) Typ. Max. Unit Test Condition Items Symbols Min. Optical output power Po 30 mW Threshold current Ith 30 50 70 mA Po=30mW Operating current Iop 60 80 100 mA Po=30mW Operating voltage Vop 2.0 2.2 2.7 V Po=30mW Lasing wavelength ep 830 850 870 nm Po=30mW Beam divergence 8 10 11 deg Po=30mW Beam divergence 25 31 40 deg Po=30mW Monitor current Im 100 300 500 uA Po=30mW Astigmatism As 11 um Po=30mW Slope Efficiency (mW/mA) 0.3 0.4 0.7 Po=30mW 10000 hrs. MTTF Po=30mW Emitter Size 10 x 60 Microns - Emitter Distance to Cap Lens = 0.3mm Structure Index Guided http://www.us-lasers.com/m850nm30m.htm 4/6/2009 US-Lasers: 850nm-30mW - IR LASER DIODE and IR DIODE LASER MODULE http://www.us-lasers.com/m850nm30m.htm Page 2 of 2 4/6/2009
M850-30 价格&库存

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