PDI-E800

PHOTONIC DETECTORS INC. High-Power GaAIAs Infrared Emitter Chip Peak Wavelength, 880 nm,Type PDI-E800 PACKAGE DIMENSIONS inch (mm) INDUSTRY EQUIVALENT OPC226 0.013 [0.33] SQ Ø0.005 [Ø0.13] BOND PAD CATHODE GOLD CONTACT CATHODE 0.008 [0.20] GOLD CONTACT ANODE Pd IFP IFP VR To & Ts TS Power Dissipation Continuous Forward Current Peak Forward Current (10µs, 10Hz) Reverse voltage Light Current Soldering Temperature* -35 160 100 2.5 5 +100 +240 mW mA A V o C o C *1/16 inch from case for 3 secs max APPLICATIONS Photoelectric switches Solid state switches Infrared sources SPECTRAL OUTPUT RELATIVE POWER OUTPUT (%) DESCRIPTION: The PDI-E800 infrared emitting FEATURES diode uses high reliability liquid phase epitaxiHigh output power ally grown GaAlAs. They are optimized for high Low degradation power, high efficiency, and low degradation. High reliability ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL PARAMETER MIN MAX UNITS WAVELENGTH, λ(nm) ELECTRO-OPTICAL CHARACTERISTICS (TA=25OC unless otherwise noted) SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP Ct tr tf POWER OUTPUT, PO (mW) POWER OUTPUT vs FORWARD CURRENT FORWARD CURRENT, IF (mA) IF = 100 mA IF = 100 mA IF = 10 mA IF = 50 mA IF = 50 mA V R = 0 V,f = 1 MHz IF = 100 mA IF = 100 mA 20 5 865 MAX 24 1.50 30 880 50 30 0.6 0.5 1.90 895 TYPICAL POWER OUTPUT DEGRADATION CURVE UNITS mW V V nm nm pF µS mS POWER OUTPUT vs TEMPERATURE RELATIVE POWER OUTPUT λP D Dλ Output Power Forward Voltage Reverse Breakdown Voltage Peak Wavelength Spectral Halfwidth Terminal Capacitance Rise Time Fall Time RELATIVE POWER OUTPUT (%) PO VF VR STRESS TIME (hrs) AMBIENT TEMPERATURE (oC) Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice.