PDI-E900

PHOTONIC DETECTORS INC. High-Power GaAs Infrared Emitter chip Peak Wavelength 940 nm,Type PDI-E900 PACKAGE DIMENSIONS inch (mm) 0.013 [0.33] SQ Ø0.005 [Ø0.13] BOND PAD CATHODE GOLD CONTACT CATHODE 0.008 [0.20] GOLD CONTACT ANODE FORWARD CURRENT, IF (mA) 940 50 30 0.8 0.8 MAX 1.50 960 980 UNITS mW V V nm nm pF µS mS 1.0 0.1 2.0 80 100 60 0 1.2 1.30 10 1.8 20 5 920 1.6 40 1 100 1.4 60 40 0 FORWARD CURRENT vs FORWARD VOLTAGE 1.2 80 0 20 1000 1.0 100 20 RELATIVE POWER , PO (%) POWER OUTPUT vs FORWARD CURRENT IF = 20 mA IF = 100 mA IF = 10 µ A IF = 100 mA IF = 100 mA V R = 0 V,f = 1 MHz IF = 100 mA IF = 100 mA 0.8 Ct tr tf IF - FORWARD CURRENT (mA) Output Power Forward Voltage Reverse Breakdown Voltage Peak Wavelength Spectral Halfwidth Terminal Capacitance Rise Time Fall Time λP D Dλ 40 WAVELENGTH, λ (nm) ELECTRO-OPTICAL CHARACTERISTICS (TA=25OC unless otherwise noted) SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP PO VF VR 60 1000 *1/16 inch from case for 3 secs max 80 960 -65 mW mA A V o C o C 940 160 100 2.5 5 +125 N/A 920 Power Dissipation Continuous Forward Current Peak Forward Current (10µs, 10Hz) Reverse voltage Storage & Operating Temperature Soldering Temperature* SPECTRAL OUTPUT 100 900 Pd IFP IFP VR To & Ts TS APPLICATIONS Photoelectric switches Optical encoders Infrared sources RELATIVE POWER OUTPUT (%) DESCRIPTION: The PDI-E900 infrared emitting FEATURES High output power diode uses high reliability liquid phase epitaxially grown GaAs. They are optimized for high power, high High reliablity efficiency, and low degradation. Low degradation ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL PARAMETER MIN MAX UNITS V F - FORWARD VOLTAGE - (V) Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Optical power and radiant intensity measured using uncapped dimpled TO-46 into integrating sphere.