GB20SLT12-247

GB20SLT12-247 1200V 20A SiC Schottky MPS™ Diode TM Silicon Carbide Schottky Diode VRRM = IF (TC = 135°C) = QC = Features • • • • • • • • Package Low VF for High Temperature Operation Enhanced Surge and Avalanche Robustness Superior Figure of Merit QC/IF Low Thermal Resistance Low Reverse Leakage Current Temperature Independent Fast Switching Positive Temperature Coefficient of VF High dV/dt Ruggedness Case RoHS TO-247-2 Advantages • • • • • • • • 1200 V 32 A 107 nC K A REACH Applications Improved System Efficiency High System Reliability Optimal Price Performance Reduced Cooling Requirements Increased System Power Density Zero Reverse Recovery Current Easy to Parallel without Thermal Runaway Enables Extremely Fast Switching • • • • • • • • Power Factor Correction (PFC) Electric Vehicles and Battery Chargers Solar Inverters High Frequency Converters Switched Mode Power Supply (SMPS) Motor Drives Anti-Parallel / Free-Wheeling Diode Induction Heating & Welding Absolute Maximum Ratings (At Tc = 25°C Unless Otherwise Stated) Parameter Repetitive Peak Reverse Voltage Symbol VRRM Continuous Forward Current IF Non-Repetitive Peak Forward Surge Current, Half Sine Wave IF,SM Repetitive Peak Forward Surge Current, Half Sine Wave IF,RM Non-Repetitive Peak Forward Surge Current i2t Value Non-Repetitive Avalanche Energy Diode Ruggedness Power Dissipation Operating and Storage Temperature Apr. 20 Rev 1.4 IF,MAX ∫i2dt EAS dV/dt PTOT Tj , Tstg Conditions TC = 100°C, D = 1 TC = 135°C, D = 1 TC = 157°C, D = 1 TC = 25°C, tP = 10 ms TC = 150°C, tP = 10 ms TC = 25°C, tP = 10 ms TC = 150°C, tP = 10 ms TC = 25°C, tP = 10 µs TC = 25°C, tP = 10 ms L = 1.8 mH, IAS = 20 A VR = 0 ~ 960 V TC = 25°C Values 1200 46 32 20 200 160 120 84 1000 200 360 200 312 -55 to 175 www.genesicsemi.com/sic-schottky-mps/GB20SLT12-247/GB20SLT12-247.pdf Unit V Note A Fig. 4 A A A A2 s mJ V/ns W °C Fig. 3 Page 1 of 7 GB20SLT12-247 1200V 20A SiC Schottky MPS™ Diode TM Electrical Characteristics Parameter Symbol Diode Forward Voltage VF Reverse Current IR Total Capacitive Charge QC Switching Time tS Total Capacitance C Conditions Min. IF = 20 A, Tj = 25°C IF = 20 A, Tj = 175°C VR = 1200 V, Tj = 25°C VR = 1200 V, Tj = 175°C VR = 400 V VR = 800 V IF ≤ IF,MAX dIF/dt = 200 A/µs VR = 400 V VR = 800 V VR = 1 V, f = 1MHz VR = 800 V, f = 1MHz Values Typ. 1.5 1.9 2 22 74 107 Max. 1.8 10 Unit Note V Fig. 1 µA Fig. 2 nC Fig. 7 < 10 ns 1218 71 pF Fig. 6 Unit Note °C/W g Nm Fig. 9 Thermal/Package Characteristics Parameter Thermal Resistance, Junction - Case Weight Mounting Torque Apr. 20 Rev 1.4 Symbol RthJC WT TM Conditions Min. Values Typ. 0.48 6.0 Screws to Heatsink www.genesicsemi.com/sic-schottky-mps/GB20SLT12-247/GB20SLT12-247.pdf Max. 1.1 Page 2 of 7 GB20SLT12-247 1200V 20A SiC Schottky MPS™ Diode Figure 1: Typical Forward Characteristics IF = f(VF,Tj); tP = 250 µs Figure 3: Power Derating Curves PTOT = f(TC); Tj = 175°C Apr. 20 Rev 1.4 TM Figure 2: Typical Reverse Characteristics IR = f(VR,Tj) Figure 4: Current Derating Curves (Typical VF) IF = f(TC); D = tP/T; Tj ≤ 175°C; fSW > 10kHz www.genesicsemi.com/sic-schottky-mps/GB20SLT12-247/GB20SLT12-247.pdf Page 3 of 7 GB20SLT12-247 1200V 20A SiC Schottky MPS™ Diode Figure 5: Current Derating Curves (Maximum VF) IF = f(TC); D = tP/T; Tj ≤ 175°C; fSW > 10kHz Figure 7: Typical Capacitive Charge vs Reverse Voltage Characteristics QC = f(VR); f = 1MHz Apr. 20 Rev 1.4 TM Figure 6: Typical Junction Capacitance vs Reverse Voltage Characteristics C = f(VR); f = 1MHz Figure 8: Typical Capacitive Energy vs Reverse Voltage Characteristics EC = f(VR); f = 1MHz www.genesicsemi.com/sic-schottky-mps/GB20SLT12-247/GB20SLT12-247.pdf Page 4 of 7 GB20SLT12-247 1200V 20A SiC Schottky MPS™ Diode TM Figure 9: Transient Thermal Impedance Zth,jc = f(tP,D); D = tP/T Figure 10: Forward Curve Model Forward Curve Model Equation: IF = (VF - VBI)/RDIFF (A) Built-In Voltage (VBI): VBI(Tj) = m × Tj + n (V) m = -0.00123 (V/°C) n = 0.995 (V) Differential Resistance (RDIFF): 1/RDIFF RDIFF(Tj) = a × Tj2 + b × Tj + c (Ω) a = 5.96e-07 (Ω/°C2) b = 8.46e-05 (Ω/°C) c = 0.0251 (Ω) VBI Forward Power Loss Equation: PLOSS = VBI(Tj) × IAVG + RDIFF(Tj) × IRMS2 IF = f(VF,Tj) Apr. 20 Rev 1.4 www.genesicsemi.com/sic-schottky-mps/GB20SLT12-247/GB20SLT12-247.pdf Page 5 of 7 GB20SLT12-247 1200V 20A SiC Schottky MPS™ Diode TM Package Dimensions TO-247-2 Package Outline 0.190 (4.83) 0.205 (5.21) 0.620 (15.75) 0.635 (16.13) 0.170 (4.32) 0.216 (5.49) 0.530 (13.46) 0.557 (14.16) 0.059 (1.50) 0.098 (2.49) 0.085 (2.16) 0.108 (2.75) 0.212 (5.39) 0.244 (6.20) 0.047 (1.19) 0.238 (6.04) 0.248 (6.30.) 0.819 0.831 (20.80) (21.10) 0.640 (16.25) 0.695 (17.65) Ø 0.140 (3.56) Ø 0.144 (3.65) Ø 0.283 (7.19) REF 0.161 (4.10) 0.173 (4.40) 0.780 0.800 (19.81) (20.32) 0.075 (1.91) 0.094 (2.39) 0.044 (1.12) 0.052 (1.33) 0.214 (5.44) BSC. Recommended Solder Pad Layout 0.022 (0.55) 0.027 (0.69) 0.090 (2.29) 0.100 (2.55) Package View Case (K) 0.120 (3.05) 0.428 (10.88) 0.08 (2.03) K A NOTE 1. CONTROLLED DEIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS. Apr. 20 Rev 1.4 www.genesicsemi.com/sic-schottky-mps/GB20SLT12-247/GB20SLT12-247.pdf Page 6 of 7 GB20SLT12-247 1200V 20A SiC Schottky MPS™ Diode TM RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS 2), as adopted by EU member states on January 2, 2013 and amended on March 31, 2015 by EU Directive 2015/863. RoHS Declarations for this product can be obtained from your GeneSiC representative. REACH Compliance REACH substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a GeneSiC representative to insure you get the most up-to-date REACH SVHC Declaration. REACH banned substance information (REACH Article 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Related Links • SPICE Models: https://www.genesicsemi.com/sic-schottky-mps/GB20SLT12-247/GB20SLT12-247_SPICE.zip • PLECS Models: https://www.genesicsemi.com/sic-schottky-mps/GB20SLT12-247/GB20SLT12-247_PLECS.zip • CAD Models: https://www.genesicsemi.com/sic-schottky-mps/GB20SLT12-247/GB20SLT12-247_3D.zip • Evaluation Boards: https://www.genesicsemi.com/technical-support • Reliability: https://www.genesicsemi.com/reliability • Compliance: https://www.genesicsemi.com/compliance • Quality Manual: https://www.genesicsemi.com/quality www.genesicsemi.com/sic-schottky-mps/ Apr. 20 Rev 1.4 Copyright© 2020 GeneSiC Semiconductor Inc. All Rights Reserved. The information in this document is subject to change without notice. Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155, Dulles, VA 20166; USA Page 7 of 7 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: GeneSiC Semiconductor: GB20SLT12-247