1N3879 thru 1N3883R
Silicon Fast
Recovery Diode
VRRM = 50 V - 400 V
IF = 6 A
Features
• High Surge Capability
• Types up to 400 V VRRM
DO-4 Package
• Not ESD Sensitive
A
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
C
A
C
Stud Stud
(R)
3. Stud is base.
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Symbol
Conditions
1N3879 (R) 1N3880 (R) 1N3881 (R) 1N3882 (R) 1N3883 (R) Unit
VRRM
50
VRMS
VDC
100
200
300
400
V
35
70
140
210
280
V
50
100
200
300
400
V
Continuous forward current
IF
TC ≤ 100 °C
6
6
6
6
6
A
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
TC = 25 °C, tp = 8.3 ms
90
90
90
90
90
A
Operating temperature
Storage temperature
Tj
Tstg
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
Conditions
VF
IF = 6 A, Tj = 25 °C
VR = 50 V, Tj = 25 °C
VR = 50 V, Tj = 150 °C
1.4
15
3
1.4
15
3
1.4
15
3
1.4
15
3
1.4
15
3
μA
mA
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
200
200
200
200
200
nS
2.5
2.5
2.5
2.5
2.5
°C/W
IR
1N3879 (R) 1N3880 (R) 1N3881 (R) 1N3882 (R) 1N3883 (R) Unit
V
Recovery Time
Maximum reverse recovery
time
TRR
Thermal characteristics
Thermal resistance, junction
- case
Oct. 2018
RthJC
http://www.diodemodule.com/silicon_products/studs/1n3881r.pdf
1
1N3879 thru 1N3883R
Oct. 2018
http://www.diodemodule.com/silicon_products/studs/1n3881r.pdf
2
1N3879 thru 1N3883R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
DO- 4 (DO-203AA)
M
J
P
D
B
G
N
C
E
F
A
A
C
A
C
Stud Stud
(R)
Inches
Millimeters
Min
Max
Min
Max
B
0.424
0.437
10.77
11.10
C
-----
0.505
-----
12.82
D
------
0.800
-----
20.30
E
0.453
0.492
11.50
12.50
F
0.114
0.140
2.90
3.50
G
-----
0.405
-----
10.29
J
-----
0.216
-----
5.50
M
-----
φ0.302
-----
φ7.68
N
0.031
0.045
0.80
1.15
P
0.070
0.79
1.80
2.00
A
Oct. 2018
10-32 UNF
http://www.diodemodule.com/silicon_products/studs/1n3881r.pdf
3
Mouser Electronics
Authorized Distributor
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GeneSiC Semiconductor:
1N3881R
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