SB3100TA

SANGDEST MICROELECTRONICS SB3100 Green Products Technical Data Data Sheet N0089 Rev. - SB3100 SCHOTTKY RECTIFIER Applications: • • • • • • Disk Drives Switching power supply Converters Free-Wheeling diodes Reverse battery protection Battery Charging Features: • • • • • • • Small foot print, surface moutable Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In Inches / mm DO-201AD • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS SB3100 Green Products Technical Data Data Sheet N0089 Rev. - Marking Diagram: S B 3100 SSG XXXXX Where XXXXX is YYWWL SB 3 100 SSG YY WW L = Device Type = Forward Current (3A) = Reverse Voltage (100V) = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package DO-201AD (Pb-Free) SB3100 Shipping 1250pcs / tape For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Symbol VRWM Max. Average Forward IF(AV) Max. Peak One Cycle Non-Repetitive Surge Current IFSM Condition 50% duty cycle @TC =105℃ rectangular wave form(L=0.375”) Max. 100 Units V 3.0 A 8.3 ms, half Sine pulse 110 A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS SB3100 Green Products Technical Data Data Sheet N0089 Rev. - Electrical Characteristics: Characteristics Max. Forward Voltage Drop Max. Reverse Current Symbol VF1 IR1 IR2 Typical Junction Capacitance * Cj Condition @ 3A, Pulse, TJ = 25℃ @VR = rated VR TJ = 25℃ @VR = rated VR TJ = 100℃ @VR = 5.0 V, Tc=25℃ fSIG = 1MHz Max. 0.79 1.0 Units V mA 10 mA 250 pF Pulse Width < 300µs, Duty Cycle