STB10100TR

ST10100 STB10100 STF10100 STD10100 SANGDEST MICROELECTRONICS Technical Data Data Sheet N1039, Rev. A Green Products ST10100/STB10100/STF10100/STD10100 SCHOTTKY RECTIFIER Applications: • • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Center tap configuration Features: • • • • • • • • 150°C TJ operation Center tap configuration Ultralow forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot ST10100 STB10100 STF10100 STD10100 TO-220AC D²PAK ITO-220AC DPAK Mechanical Dimensions: In Inches / mm Symbol A A1 A2 b b1 c D D1 E E1 e1 H1 L L1 ΦP Q Θ1 Θ2 Θ3 Dimensions in millimeters Min. Typical Max. 4.55 1.17 2.59 0.71 0.36 14.64 8.55 10.01 9.98 6.04 13.00 3.74 2.54 4.70 1.27 2.69 0.81 1.27 0.38 14.94 8.07 10.16 10.18 5.08 6.24 13.86 3.80 3.84 2.74 5° 4° 4° 4.85 1.37 2.89 0.96 0.61 15.24 8.85 10.31 10.38 6.44 14.08 4.04 2.94 TO-220AC • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • ST10100 STB10100 STF10100 STD10100 SANGDEST MICROELECTRONICS Technical Data Data Sheet N1039, Rev. A Green Products Symbol A A1 A2 b b1 c c1 D D1 E E1 E2 e H L L1 L2 L3 e e1 e2 e3 Dimensions in millimeters Min. Typical Max. 4.55 0 2.59 0.71 0.36 1.17 8.55 6.40 10.01 7.6 9.98 14.6 2.00 1.17 0 4.70 0.10 2.69 0.81 1.27 0.38 1.27 8.70 4.85 0.25 2.89 0.96 0.61 1.37 8.85 10.16 10.31 10.08 2.54 15.1 2.30 1.27 10.18 15.6 2.70 1.40 2.20 0.25BSC 5° 4° 4° 8° D2PAK • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • ST10100 STB10100 STF10100 STD10100 SANGDEST MICROELECTRONICS Technical Data Data Sheet N1039, Rev. A Green Products ITO-220AC • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • ST10100 STB10100 STF10100 STD10100 SANGDEST MICROELECTRONICS Technical Data Data Sheet N1039, Rev. A Green Products DPAK • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • ST10100 STB10100 STF10100 STD10100 SANGDEST MICROELECTRONICS Technical Data Data Sheet N1039, Rev. A Green Products Marking Diagram: Where XXXXX is YYWWL ST B/F/D 10 100 SSG YY WW L ST10100 STB10100 STF10100 = Device Type = Package type = Forward Current (10A) = Reverse Voltage (100V) = SSG = Year = Week = Lot Number STD10100 Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package Shipping TO-220AC(Pb-Free) 50pcs / tube STB10100 D²PAK(Pb-Free) 800pcs / reel STF10100 ITO-220AC(Pb-Free) 50pcs / tube STD10100 DPAK(Pb-Free) 2500pcs / reel ST10100 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Symbol VRWM Average Forward Current IF(AV) Condition 50% duty cycle @TC =100°C, rectangular wave form Peak One Cycle Non-Repetitive Surge Current (per leg) IFSM 8.3 ms, half Sine pulse Max. 100 Units V 10 A 150 A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • ST10100 STB10100 STF10100 STD10100 SANGDEST MICROELECTRONICS Technical Data Data Sheet N1039, Rev. A Green Products Electrical Characteristics: Characteristics Forward Voltage Drop * Symbol VF1 VF2 Reverse Current (per leg) IR1 IR2 IR3 Junction Capacitance (per leg) Voltage Rate of Change * CT dv/dt Condition @ 5A, Pulse, TJ = 25 °C @ 10A, Pulse, TJ = 25 °C @ 5A, Pulse, TJ = 125 °C @ 10A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 100 °C @VR = rated VR TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz - Typ. 0.54 0.69 0.48 0.59 Max. 0.55 0.75 0.53 0.70 Units 18 300 uA - 12 mA 7.8 36 mA 462 - pF - 10,000 V/μs V V Pulse Width < 300µs, Duty Cycle