BYW29E-200,127

IMPORTANT NOTICE 10 December 2015 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details. In this document where the previous NXP references remain, please use the new links as shown below. WWW - For www.nxp.com use www.ween-semi.com Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) “© NXP Semiconductors N.V. {year}. All rights reserved” becomes “© WeEn Semiconductors Co., Ltd. {year}. All rights reserved” If you have any questions related to this document, please contact our nearest sales office via email or phone (details via salesaddresses@ween-semi.com). Thank you for your cooperation and understanding, WeEn Semiconductors TO -22 0 AC BYW29E-200 Ultrafast power diode 17 September 2013 Product data sheet 1. General description Ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package. 2. Features and benefits • • • • • • • Fast switching Guaranteed ESD capability High thermal cycling performance Low on-state loss Low thermal resistance Rugged: reverse voltage surge capability Soft recovery minimizes power-consuming oscillations 3. Applications • Output rectifiers in high-frequency switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter VRRM repetitive peak reverse voltage IF(AV) average forward current Conditions Min Typ Max Unit - - 200 V - - 8 A IF = 8 A; Tj = 150 °C; Fig. 4 - 0.8 0.895 V IF = 1 A; VR = 30 V; dIF/dt = 100 A/s; - 20 25 ns - - 8 kV SQW; δ = 0.5 ; Tmb ≤ 128 °C; Fig. 1; Fig. 2 Static characteristics VF forward voltage Dynamic characteristics trr reverse recovery time Tj = 25 °C; ramp recovery; Fig. 5; Fig. 7 Electrostatic discharge VESD electrostatic discharge voltage HBM; C = 250 pF; R = 1.5 kΩ Scan or click this QR code to view the latest information for this product BYW29E-200 NXP Semiconductors Ultrafast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K Simplified outline cathode Graphic symbol mb K A 001aaa020 2 A anode mb mb mounting base; cathode 1 2 TO-220AC (SOD59) 6. Ordering information Table 3. Ordering information Type number Package BYW29E-200 Name Description Version TO-220AC plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220AC SOD59 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VRRM Conditions Min Max Unit repetitive peak reverse voltage - 200 V VRWM crest working reverse voltage - 200 V VR reverse voltage - 200 V IF(AV) average forward current - 8 A SQW; δ = 0.5 ; Tmb ≤ 128 °C; Fig. 1; Fig. 2 IFRM repetitive peak forward current SQW; δ = 0.5 ; tp = 25 µs; Tmb ≤ 128 °C - 16 A IFSM non-repetitive peak forward current SIN; tp = 8.3 ms; Tj(init) = 25 °C - 88 A SIN; tp = 10 ms; Tj(init) = 25 °C - 80 A IRRM repetitive peak reverse current δ = 0.001 ; tp = 2 µs - 0.2 A IRSM non-repetitive peak reverse current tp = 100 µs - 0.2 A Tstg storage temperature -40 150 °C BYW29E-200 Product data sheet All information provided in this document is subject to legal disclaimers. 17 September 2013 © NXP N.V. 2013. All rights reserved 2 / 10 BYW29E-200 NXP Semiconductors Ultrafast power diode Symbol Parameter Conditions Tj junction temperature Min Max Unit - 150 °C - 8 kV Electrostatic discharge VESD electrostatic discharge voltage HBM; C = 250 pF; R = 1.5 kΩ 003aaj507 12 δ=1 a = 1.57 Ptot (W) Ptot (W) 1.9 2.2 6 0.5 8 003aaj508 8 2.8 0.2 4.0 4 0.1 4 2 0 Fig. 1. 0 4 8 IF(AV) (A) 0 12 Forward power dissipation as a function of average forward current; square waveform; maximum values Fig. 2. 0 2 4 6 IF(AV) (A) 8 Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 3 - - 2.7 K/W Rth(j-a) thermal resistance from junction to ambient in free air - 60 - K/W BYW29E-200 Product data sheet All information provided in this document is subject to legal disclaimers. 17 September 2013 © NXP N.V. 2013. All rights reserved 3 / 10 BYW29E-200 NXP Semiconductors Ultrafast power diode 003aaj513 10 Zth(j-mb) (K/W) 1 10-1 P δ= 10-2 tp 10-3 10-6 Fig. 3. 10-5 10-4 10-3 10-2 10-1 tp T t T 1 10 tp (s) Transient thermal impedance from junction to mounting base as a function of pulse width 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit IF = 8 A; Tj = 25 °C; Fig. 4 - 0.92 1.05 V IF = 20 A; Tj = 25 °C; Fig. 4 - 1.1 1.3 V IF = 8 A; Tj = 150 °C; Fig. 4 - 0.8 0.895 V VR = 200 V; Tj = 25 °C - 2 10 µA VR = 200 V; Tj = 100 °C - 0.2 0.6 mA IF = 2 A; VR = 30 V; dIF/dt = 20 A/s; - 4 11 nC - 20 25 ns - 15 20 ns - 1 - V Static characteristics VF IR forward voltage reverse current Dynamic characteristics Qr recovered charge Tj = 25 °C; Fig. 5; Fig. 6 trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/s; Tj = 25 °C; ramp recovery; Fig. 5; Fig. 7 IF = 0.5 A; IR = 1 A; IR(meas) = 0.25 A; Tj = 25 °C; step recovery; Fig. 8 VFRM forward recovery voltage BYW29E-200 Product data sheet IF = 1 A; dIF/dt = 10 A/s; Tj = 25 °C; Fig. 9 All information provided in this document is subject to legal disclaimers. 17 September 2013 © NXP N.V. 2013. All rights reserved 4 / 10 BYW29E-200 NXP Semiconductors Ultrafast power diode 003aaj509 30 dlF IF dt IF (A) trr 20 time (1) (2) 25 % (3) 10 IR 0 Fig. 4. 100 % Qr IRM 003aac562 0 0.5 1 1.5 VF (V) 2 Fig. 5. Reverse recovery definitions; ramp recovery Forward current as a function of forward voltage 003aaj510 103 003aaj511 103 Qr (nC) trr (ns) 102 (2) 102 (4) (3) (2) (1) (1) 10 1 Fig. 6. 10 1 10 dIF 1 102 Recovered charge as a function of rate of change of forward current; maximum values BYW29E-200 Product data sheet Fig. 7. 1 dIF 102 Reverse recovery time as a function of rate of change of forward current; maximum values All information provided in this document is subject to legal disclaimers. 17 September 2013 10 © NXP N.V. 2013. All rights reserved 5 / 10 BYW29E-200 NXP Semiconductors Ultrafast power diode IF IF IF trr time time 0.25 x IR VF Qr VFRM IR IR Fig. 8. VF 003aac563 time Reverse recovery definitions; step recovery 001aab912 Fig. 9. BYW29E-200 Product data sheet Forward recovery definitions All information provided in this document is subject to legal disclaimers. 17 September 2013 © NXP N.V. 2013. All rights reserved 6 / 10 BYW29E-200 NXP Semiconductors Ultrafast power diode 10. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220AC SOD59 E A A1 P q D1 D H Q b1 L 1 2 c b e 0 5 Dimensions Unit mm max nom min 10 mm scale A A1 b b1(1) c D D1 E e 4.7 1.40 0.95 1.7 0.65 15.8 6.8 10.30 4.3 1.15 0.70 1.3 0.45 15.6 6.4 9.65 H 5.08 (REF) L P Q q 16.25 15.0 3.80 2.6 2.9 15.70 12.5 3.65 2.2 2.7 Note 1. Protruded dambar are included in the dimension. Outline version SOD59 sod059_po References IEC JEDEC JEITA European projection Issue date 09-08-25 12-11-27 2-lead TO-220AC Fig. 10. Package outline TO-220AC (SOD59) BYW29E-200 Product data sheet All information provided in this document is subject to legal disclaimers. 17 September 2013 © NXP N.V. 2013. All rights reserved 7 / 10 BYW29E-200 NXP Semiconductors Ultrafast power diode In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 11. Legal information 11.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. 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NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 11.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. BYW29E-200 Product data sheet Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 17 September 2013 © NXP N.V. 2013. All rights reserved 8 / 10 BYW29E-200 NXP Semiconductors Ultrafast power diode grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. BYW29E-200 Product data sheet All information provided in this document is subject to legal disclaimers. 17 September 2013 © NXP N.V. 2013. All rights reserved 9 / 10 BYW29E-200 NXP Semiconductors Ultrafast power diode 12. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Limiting values .......................................................2 8 Thermal characteristics .........................................3 9 Characteristics ....................................................... 4 10 Package outline ..................................................... 7 11 11.1 11.2 11.3 11.4 Legal information ...................................................8 Data sheet status ................................................. 8 Definitions .............................................................8 Disclaimers ...........................................................8 Trademarks .......................................................... 9 © NXP N.V. 2013. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 17 September 2013 BYW29E-200 Product data sheet All information provided in this document is subject to legal disclaimers. 17 September 2013 © NXP N.V. 2013. All rights reserved 10 / 10