BYT79-500,127

IMPORTANT NOTICE 10 December 2015 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details. In this document where the previous NXP references remain, please use the new links as shown below. WWW - For www.nxp.com use www.ween-semi.com Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) “© NXP Semiconductors N.V. {year}. All rights reserved” becomes “© WeEn Semiconductors Co., Ltd. {year}. All rights reserved” If you have any questions related to this document, please contact our nearest sales office via email or phone (details via salesaddresses@ween-semi.com). Thank you for your cooperation and understanding, WeEn Semiconductors DISCRETE SEMICONDUCTORS DATA SHEET BYT79 series Rectifier diodes ultrafast Product specification September 1998 NXP Semiconductors Product specification Rectifier diodes ultrafast FEATURES BYT79 series SYMBOL QUICK REFERENCE DATA VR = 300 V/ 400 V/ 500 V • Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Low thermal resistance k 1 VF ≤ 1.05 V a 2 IF(AV) = 14 A trr ≤ 60 ns GENERAL DESCRIPTION PINNING Ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYT79 series is supplied in the conventional leaded SOD59 (TO220AC) package. PIN SOD59 (TO220AC) DESCRIPTION 1 cathode 2 anode tab tab cathode 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VRRM VR Peak repetitive reverse voltage Continuous reverse voltage IF(AV) Average forward current1 IFSM Non-repetitive peak forward current. Tstg Tj Storage temperature Operating junction temperature CONDITIONS MIN. BYT79 Tmb ≤ 147˚C square wave; δ = 0.5; Tmb ≤ 117 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) - MAX. -300 300 300 -400 400 400 UNIT -500 500 500 V V - 14 A - 130 143 A A -40 - 150 150 ˚C ˚C THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance junction to mounting base Thermal resistance junction to ambient Rth j-a CONDITIONS in free air. MIN. TYP. MAX. UNIT - - 2.0 K/W - 60 - K/W 1 Neglecting switching and reverse current losses September 1998 1 Rev 1.300 NXP Semiconductors Product specification Rectifier diodes ultrafast BYT79 series ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF Forward voltage IR Reverse current Qs Reverse recovery charge trr Reverse recovery time Irrm Peak reverse recovery current Vfr Forward recovery voltage IF = 15 A; Tj = 150˚C IF = 30 A VR = VRRM VR = VRRM; Tj = 100 ˚C IF = 2 A to VR ≥ 30 V; dIF/dt = 20 A/µs IF = 1 A to VR ≥ 30 V; dIF/dt = 100 A/µs IF = 10 A to VR ≥ 30 V; dIF/dt = 50 A/µs; Tj = 100˚C IF = 10 A; dIF/dt = 10 A/µs I dI F 25 F MIN. TYP. MAX. UNIT - 0.90 1.17 5.0 0.2 50 1.05 1.38 50 0.8 60 V V µA mA nC - 50 60 ns - 4.0 5.2 A - 2.5 - V Tmb(max) / C 100 D = 1.0 BYT79 PF / W Vo = 0.9075 V Rs = 0.0095 Ohms dt 110 20 t 0.5 rr 15 time 120 0.2 0.1 10 Q I I R s 10% 100% D= tp T 140 5 t T rrm 0 Fig.1. Definition of trr, Qs and Irrm I 130 tp I 0 5 10 15 IF(AV) / A 20 150 25 Fig.3. Maximum forward dissipation PF = f(IF(AV)); square wave where IF(AV) =IF(RMS) x √D. 20 F PF / W BYT79 Tmb(max) / C 110 Vo = 0.9075 V Rs = 0.0095 Ohms a = 1.57 15 1.9 120 2.2 2.8 time 10 130 4 VF V fr VF 0 time 0 5 IF(AV) / A 10 150 15 Fig.4. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). Fig.2. Definition of Vfr September 1998 140 5 2 Rev 1.300 NXP Semiconductors Product specification Rectifier diodes ultrafast BYT79 series trr / ns 1000 1000 Qs / nC IF=20 A IF = 20 A 100 100 1A 2A 10 10 Tj = 25 C Tj = 100 C 1 1 1 100 10 dIF/dt (A/us) 1.0 Fig.5. Maximum trr at Tj = 25˚C and 100˚C 10 10 -dIF/dt (A/us) 100 Fig.8. Maximum Qs at Tj = 25˚C Irrm / A 10 IF= 20 A Transient thermal impedance, Zth j-mb (K/W) 1 1 IF=1A 0.1 0.1 PD 0.01 Tj = 25 C Tj = 100 C 0.01 10 -dIF/dt (A/us) 1 0.001 1us 100 Fig.6. Maximum Irrm at Tj = 25˚C and 100˚C. 50 tp D= T 10us tp T t 100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV79E 10s Fig.9. Transient thermal impedance Zth = f(tp) BYT79 IF / A Tj = 25 C Tj = 150 C 40 30 typ max 20 10 0 0 0.5 1 VF / V 1.5 2 Fig.7. Typical and maximum forward characteristic IF = f(VF); parameter Tj September 1998 3 Rev 1.300 NXP Semiconductors Product specification Rectifier diodes ultrafast BYT79 series MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 (2x) 2 0,9 max (2x) 5,08 0,6 2,4 Fig.10. SOD59 (TO220AC). pin 1 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1998 4 Rev 1.300 NXP Semiconductors Legal information DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. 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