BYC30W-600PQ

IMPORTANT NOTICE 10 December 2015 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details. In this document where the previous NXP references remain, please use the new links as shown below. WWW - For www.nxp.com use www.ween-semi.com Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) “© NXP Semiconductors N.V. {year}. All rights reserved” becomes “© WeEn Semiconductors Co., Ltd. {year}. All rights reserved” If you have any questions related to this document, please contact our nearest sales office via email or phone (details via salesaddresses@ween-semi.com). Thank you for your cooperation and understanding, WeEn Semiconductors TO -24 7 BYC30W-600P Hyperfast power diode 10 February 2014 Product data sheet 1. General description Hyperfast power diode in a SOD142 (2-lead TO247) plastic package. 2. Features and benefits • • • • Low leakage current Low thermal resistance Low reverse recovery current Reduces switching losses in associated MOSFET or IGBT 3. Applications • • • Active PFC in air conditioner Continuous Current Mode (CCM) Power Factor Correction (PFC) Half-bridge/full-bridge switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter VRRM repetitive peak reverse voltage IF(AV) average forward current Conditions Min Typ Max Unit - - 600 V - - 30 A IF = 30 A; Tj = 150 °C; Fig. 6 - 1.38 1.8 V IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs; - 18 22 ns δ = 0.5; Tmb ≤ 115 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3 Static characteristics VF forward voltage Dynamic characteristics trr reverse recovery time Tj = 25 °C; Fig. 7 Scan or click this QR code to view the latest information for this product BYC30W-600P NXP Semiconductors Hyperfast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K Simplified outline Graphic symbol cathode K A 001aaa020 2 A anode mb mb mounting base; connected to cathode 1 2 TO-247 (SOD142) 6. Ordering information Table 3. Ordering information Type number Package BYC30W-600P Name Description Version TO-247 Plastic Single-ended through-hole package; Heatsink mounted; 1 mounting hole; 2-lead TO-247 SOD142 7. Marking Table 4. Marking codes Type number Marking code BYC30W-600P BYC30W-600P 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VRRM Conditions Min Max Unit repetitive peak reverse voltage - 600 V VRWM crest working reverse voltage - 600 V VR reverse voltage DC - 600 V IF(AV) average forward current δ = 0.5; Tmb ≤ 115 °C; square-wave - 30 A - 60 A pulse; Fig. 1; Fig. 2; Fig. 3 IFRM repetitive peak forward current δ = 0.5; tp = 25 µs; Tmb ≤ 115 °C; square-wave pulse BYC30W-600P Product data sheet All information provided in this document is subject to legal disclaimers. 10 February 2014 © NXP N.V. 2014. All rights reserved 2/9 BYC30W-600P NXP Semiconductors Hyperfast power diode Symbol Parameter Conditions Min Max Unit IFSM non-repetitive peak forward current tp = 10 ms; Tj(init) = 25 °C; sine-wave - 270 A - 300 A pulse; Fig. 4 tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4 Tstg storage temperature -65 175 °C Tj junction temperature - 175 °C 003aak738 90 003aak739 60 δ=1 Ptot (W) a = 1.57 Ptot (W) 0.5 60 1.9 2.2 40 2.8 0.2 30 0 Fig. 1. 4.0 0.1 0 10 20 20 30 0 40 50 IF(AV) (A) Forward power dissipation as a function of average forward current; square waveform; maximum values Fig. 2. aaa-010282 45 IF(AV) (A) 115 °C 102 Fig. 3. 100 Product data sheet 30 aaa-010283 IF 10 10-5 150 200 Tmb (°C) Forward current as a function of mounting base Fig. 4. temperature; maximum values BYC30W-600P IF(AV) (A) IFSM (A) 15 50 20 104 103 0 10 Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values 30 0 -50 0 t tp Tj(init) = 25 °C max 10-4 10-3 tp (s) 10-2 Non-repetitive peak forward current as a function of pulse width; sinusoidal waveform; maximum values All information provided in this document is subject to legal disclaimers. 10 February 2014 IFSM © NXP N.V. 2014. All rights reserved 3/9 BYC30W-600P NXP Semiconductors Hyperfast power diode 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base with heatsink compound; Fig. 5 - - 1 K/W Rth(j-a) thermal resistance from junction to ambient in free air - 45 - K/W aaa-010284 10 Zth(j-mb) (K/W) 1 10-1 δ = 0.5 10-2 δ = 0.3 P δ = 0.1 δ = 0.05 δ = 0.02 10-3 δ = 0.01 single pulse 10-4 10-6 Fig. 5. δ= 10-5 10-4 10-3 tp 10-2 10-1 tp T t T 1 10 tp (s) Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit IF = 30 A; Tj = 25 °C; Fig. 6 - 2 2.75 V IF = 30 A; Tj = 150 °C; Fig. 6 - 1.38 1.8 V VR = 600 V; Tj = 25 °C - - 10 µA VR = 600 V; Tj = 150 °C - - 1 mA IF = 30 A; VR = 200 V; dIF/dt = 200 A/ - 50 - nC - 280 - nC Static characteristics VF IR forward voltage reverse current Dynamic characteristics Qr recovered charge µs; Tj = 25 °C; Fig. 7 IF = 30 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 125 °C; Fig. 7 BYC30W-600P Product data sheet All information provided in this document is subject to legal disclaimers. 10 February 2014 © NXP N.V. 2014. All rights reserved 4/9 BYC30W-600P NXP Semiconductors Hyperfast power diode Symbol Parameter Conditions Min Typ Max Unit trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs; - 18 22 ns - 35 - ns - 70 - ns - 29 - ns - 3.5 - A - 7.6 - A Tj = 25 °C; Fig. 7 IF = 30 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 25 °C; Fig. 7 IF = 30 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 125 °C; Fig. 7 IF = 30 A; VR = 400 V; dIF/dt = 500 A/ µs; Tj = 25 °C; Fig. 7 IRM peak reverse recovery current IF = 30 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 25 °C; Fig. 7 IF = 30 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 125 °C; Fig. 7 003aak742 40 IF IF (A) dlF dt 30 trr 20 (1) (2) time (3) 25 % Qr 10 IR 0 Fig. 6. 100 % IRM 003aac562 0 1 2 VF (V) 3 Fig. 7. Reverse recovery definitions; ramp recovery Forward current as a function of forward voltage BYC30W-600P Product data sheet All information provided in this document is subject to legal disclaimers. 10 February 2014 © NXP N.V. 2014. All rights reserved 5/9 BYC30W-600P NXP Semiconductors Hyperfast power diode 11. Package outline Plastic Single-ended through-hole package; Heatsink mounted; 1 mounting hole; 2-lead TO-247 SOD142 E E1 A p P1 A1 E3 P2 D2 q E2 D1 D L1 b2 L e Q b1 c b 0 2.5 5 mm scale Dimensions (mm are the original dimensions) Unit max nom min mm A A1 b b1 b2 c 5.2 2.1 1.4 2.2 3.2 0.7 20.6 17.68 1.2 D D1 D2 4.7 1.9 1.0 1.8 2.8 0.5 20.3 17.28 0.8 e 5.45 E2 E3 p p1 p2 q Q 15.75 14.22 5.2 E E1 1.8 20.9 4.75 L L1 3.7 7.3 3.6 6.18 2.6 15.45 13.82 4.8 1.4 20.4 4.25 3.5 7.1 3.4 5.78 2.2 sod142_po Outline version SOD142 Fig. 8. References IEC JEDEC JEITA European projection Issue date 12-11-13 12-11-27 TO247 Package outline TO-247 (SOD142) BYC30W-600P Product data sheet All information provided in this document is subject to legal disclaimers. 10 February 2014 © NXP N.V. 2014. All rights reserved 6/9 BYC30W-600P NXP Semiconductors Hyperfast power diode In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. Legal information 12.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. 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NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. BYC30W-600P Product data sheet Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. 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The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. BYC30W-600P Product data sheet All information provided in this document is subject to legal disclaimers. 10 February 2014 © NXP N.V. 2014. All rights reserved 8/9 BYC30W-600P NXP Semiconductors Hyperfast power diode 13. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 4 11 Package outline ..................................................... 6 12 12.1 12.2 12.3 12.4 Legal information ...................................................7 Data sheet status ................................................. 7 Definitions .............................................................7 Disclaimers ...........................................................7 Trademarks .......................................................... 8 © NXP N.V. 2014. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 10 February 2014 BYC30W-600P Product data sheet All information provided in this document is subject to legal disclaimers. 10 February 2014 © NXP N.V. 2014. All rights reserved 9/9