GB05SLT12-220

GB05SLT12-220   Silicon Carbide Power Schottky Diode VRRM IF (Tc = 25°C) QC Features Package         RoHS Compliant 1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability Positive temperature coefficient of VF Extremely fast switching speeds Superior figure of merit QC/IF = = =   1200 V 12 A 21 nC case PIN 1 CASE PIN 2 2 1          TO – 220AC Advantages Applications                Improved circuit efficiency (Lower overall cost) Low switching losses Ease of paralleling devices without thermal runaway Smaller heat sink requirements Low reverse recovery current Low device capacitance Low reverse leakage current at operating temperature Power Factor Correction (PFC) Switched-Mode Power Supply (SMPS) Solar Inverters Wind Turbine Inverters Motor Drives Induction Heating Uninterruptible Power Supply (UPS) High Voltage Multipliers Maximum Ratings at Tj = 175 °C, unless otherwise specified Parameter Repetitive peak reverse voltage Continuous forward current RMS forward current Surge non-repetitive forward current, Half Sine Wave Non-repetitive peak forward current 2 Symbol VRRM IF IF(RMS) IF,SM IF,max 2 I t value ∫i dt Power dissipation Operating and storage temperature Ptot Tj , Tstg Conditions Values 1200 5 8 32 26 120 5 3.4 117 -55 to 175 TC ≤ 155 °C TC ≤ 155 °C TC = 25 °C, tP = 10 ms TC = 155 °C, tP = 10 ms TC = 25 °C, tP = 10 µs TC = 25 °C, tP = 10 ms TC = 155 °C, tP = 10 ms TC = 25 °C Unit V A A A A 2 As W °C Electrical Characteristics at Tj = 175 °C, unless otherwise specified Parameter Symbol Diode forward voltage VF Reverse current IR Total capacitive charge QC Switching time ts Total capacitance C Conditions min. IF = 5 A, Tj = 25 °C IF = 5 A, Tj = 175 °C VR = 1200 V, Tj = 25 °C VR = 1200 V, Tj = 175 °C VR = 400 V IF ≤ IF,MAX VR = 960 V dIF/dt = 200 A/μs VR = 400 V Tj = 175 °C VR = 960 V VR = 1 V, f = 1 MHz, Tj = 25 °C VR = 400 V, f = 1 MHz, Tj = 25 °C VR = 1000 V, f = 1 MHz, Tj = 25 °C Values typ. 1.6 2.6 5 10 21 35 max. 1.9 3.0 50 100 Unit V µA nC < 25 ns 260 25 20 pF RthJC 1.4 °C/W M 0.6 Nm Thermal Characteristics Thermal resistance, junction - case Mechanical Properties Mounting torque Aug 2014   http://www.genesicsemi.com/index.php/sic-products/schottky Pg1 of 4 GB05SLT12-220   Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics Figure 3: Power Derating Curve Figure 4: Current Derating Curves (D = tP/T, tP= 400 µs) (Considering worst case Zth conditions ) Figure 5: Typical Junction Capacitance vs Reverse Voltage Characteristics Figure 6: Typical Switching Energy vs Reverse Voltage Characteristics Aug 2014   http://www.genesicsemi.com/index.php/sic-products/schottky   Pg2 of 4 GB05SLT12-220   Figure 7: Current vs Pulse Duration Curves at TC = 155 °C   Figure 8: Transient Thermal Impedance Package Dimensions: TO-220AC PACKAGE OUTLINE   NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS Aug 2014   http://www.genesicsemi.com/index.php/sic-products/schottky Pg3 of 4 GB05SLT12-220     Revision History Date Revision Comments 2014/08/26 3 Updated Electrical Characteristics 2013/02/05 2 Second generation update 2012/05/22 1 Second generation release 2010/12/14 0 Initial release Supersedes Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. Aug 2014   http://www.genesicsemi.com/index.php/sic-products/schottky Pg4 of 4 GB05SLT12-220   SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the GB05SLT12-220 device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 04-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 * Dulles, VA 20166 * http://www.genesicsemi.com/index.php/sic-products/schottky * * COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc. * ALL RIGHTS RESERVED * * These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY * OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED * TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A * PARTICULAR PURPOSE." * Models accurate up to 2 times rated drain current. * * Start of GB05SLT12-220 SPICE Model * .SUBCKT GB05SLT12 ANODE KATHODE R1 ANODE INT R=((TEMP-24)*0.0015); Temperature Dependant Resistor D1 INT KATHODE GB05SLT12_25C; Call the 25C Diode Model D2 ANODE KATHODE GB05SLT12_PIN; Call the PiN Diode Model .MODEL GB05SLT12_25C D + IS 5.83E-18 RS 0.1276 + N 1 IKF 602 + EG 1.2 XTI 3 + CJO 3.00E-10 VJ 0.419 + M 1.6 FC 0.5 + TT 1.00E-10 BV 1200 + IBV 1.00E-03 VPK 1200 + IAVE 5 TYPE SiC_Schottky + MFG GeneSiC_Semiconductor .MODEL GB05SLT12_PIN D + IS 3.50 E-12 RS 0.3648 + N 4.409 IKF 73 + EG 3.23 XTI -6 + FC 0.5 TT 0 + BV 1200 IBV 1.00E-03 + VPK 1200 IAVE 1 + TYPE SiC_PiN .ENDS * * End of GB05SLT12-220 SPICE Model Nov 2013   http://www.genesicsemi.com/index.php/sic-products/schottky Page 1 of 1  Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: GeneSiC Semiconductor: GB05SLT12-220