1N8030-GA

* MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 * Dulles, VA 20166 * * COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc. * ALL RIGHTS RESERVED * * These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY * OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED * TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A * PARTICULAR PURPOSE." * Models accurate up to 2 times rated drain current. * * Start of 1N8030-GA SPICE Model * .SUBCKT 1N8030 ANODE KATHODE D1 ANODE KATHODE 1N8030_25C; Call the Schottky Diode Model D2 ANODE KATHODE 1N8030_PIN; Call the PiN Diode Model .MODEL 1N8030_25C D + IS 3.57E-18 RS 0.49751 + TRS1 0.0057 TRS2 2.40E-05 + N 1 IKF 322 + EG 1.2 XTI 3 + CJO 9.12E-11 VJ 0.371817384 + M 1.527759838 FC 0.5 + TT 1.00E-10 BV 650 + IBV 1.00E-03 VPK 650 + IAVE 1 TYPE SiC_Schottky + MFG GeneSiC_Semiconductor .MODEL 1N8030_PIN D + IS 5.73E-11 RS 0.72994 + N 5 IKF 800 + EG 3.23 XTI -14 + FC 0.5 TT 0 + BV 650 IBV 1.00E-03 + VPK 650 IAVE 1 + TYPE SiC_PiN .ENDS * * End of 1N8030-GA SPICE Model