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12TQ200

12TQ200

  • 厂商:

    SMCDIODESOLUTIONS(桑德斯)

  • 封装:

    TO220-2

  • 描述:

    DIODESCHOTTKY200V15ATO220AC

  • 数据手册
  • 价格&库存
12TQ200 数据手册
12TQ0200 12TQ200S SANGDEST MICROELECTRONICS Technical Data Data Sheet N0664, Rev. - Green Products 12TQ200/12TQ200S SCHOTTKY RECTIFIER Applications: • • • • • Switching power supply Redundant power subsystems Converters Free-Wheeling diodes Reverse battery protection Features: • • • • • • • • 175℃ TJ operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In mm / Inches Case styles 12TQ… 12TQ…S D2PAK TO-220AC Symbol A A1 A2 b b1 c D D1 E E1 e1 H1 L L1 ΦP Q Θ1 Θ2 Θ3 Dimensions in millimeters Min. Typical Max. 4.55 1.17 2.59 0.71 0.36 14.64 8.55 10.01 9.98 6.04 13.00 3.74 2.54 4.70 1.27 2.69 0.81 1.27 0.38 14.94 8.07 10.16 10.18 5.08 6.24 13.86 3.80 3.84 2.74 5° 4° 4° 4.85 1.37 2.89 0.96 0.61 15.24 8.85 10.31 10.38 6.44 14.08 4.04 2.94 TO-220AC • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • 12TQ0200 12TQ200S SANGDEST MICROELECTRONICS Technical Data Data Sheet N0664, Rev. - Green Products Symbol A A1 A2 b b1 c c1 D D1 E E1 E2 e H L L1 L2 L3 e e1 e2 e3 Dimensions in millimeters Min. Typical Max. 4.55 0 2.59 0.71 0.36 1.17 8.55 6.40 10.01 7.6 9.98 14.6 2.00 1.17 0 4.70 0.10 2.69 0.81 1.27 0.38 1.27 8.70 4.85 0.25 2.89 0.96 0.61 1.37 8.85 10.16 10.31 10.08 2.54 15.1 2.30 1.27 10.18 15.6 2.70 1.40 2.20 0.25BSC 5° 4° 4° 8° D2PAK • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • 12TQ0200 12TQ200S SANGDEST MICROELECTRONICS Technical Data Data Sheet N0664, Rev. - Green Products Marking Diagram: Where XXXXX is YYWWL 12TQ200 SSG YY WW L 12TQ200 =Part Name = SSG = Year = Week = Lot Number 12TQ200S Cautions:Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package TO-220AC (Pb-Free) D²PAK (Pb-Free) 12TQ… 12TQ…S Shipping 50pcs / tube 800pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Symbol VRWM Condition - Max. 200 Units V Max. Average Forward IF(AV) 50% duty cycle @TC =136°C, rectangular wave form 15 A Max. Peak One Cycle NonRepetitive Surge Current (per leg) IFSM 8.3 ms, half Sine pulse 276 A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • 12TQ0200 12TQ200S SANGDEST MICROELECTRONICS Technical Data Data Sheet N0664, Rev. - Green Products Electrical Characteristics: Characteristics Max. Forward Voltage Drop * Max. Reverse Current at DC condition Max. Reverse Current IR2 Max. Junction Capacitance CT Typical Series Inductance LS Max. Voltage Rate of Change(Rated VR) * Symbol VF1 VF2 IR1 dv/dt Condition @ 15A, Pulse, TJ = 25 °C @ 15A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz Measured lead to lead 5 mm from package body - Max. 0.92 0.76 0.55 Units V V mA 7 mA 300 pF 8.0 nH 10,000 V/μs Specification -55 to +175 -55 to +175 2.0 Units °C °C °C/W Pulse Width < 300µs, Duty Cycle
12TQ200 价格&库存

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