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12TQ150

12TQ150

  • 厂商:

    SMCDIODESOLUTIONS(桑德斯)

  • 封装:

    TO220-2

  • 描述:

    DIODESCHOTTKY150V15ATO220AC

  • 数据手册
  • 价格&库存
12TQ150 数据手册
12TQ150 12TQ150S SANGDEST MICROELECTRONICS Technical Data Data Sheet N0609, Rev. - Green Products 12TQ150/12TQ150S SCHOTTKY RECTIFIER Applications: • • • • • Switching power supply Redundant power subsystems Converters Free-Wheeling diodes Reverse battery protection Features: • • • • • • • • 175 ℃ TJ operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In mm / Inches Case styles 12TQ150 12TQ150S D2PAK TO-220AC Symbol A A1 A2 b b1 c D D1 E E1 e1 H1 L L1 ΦP Q Θ1 Θ2 Θ3 Dimensions in millimeters Min. Typical Max. 4.55 1.17 2.59 0.71 0.36 14.64 8.55 10.01 9.98 6.04 13.00 3.74 2.54 4.70 1.27 2.69 0.81 1.27 0.38 14.94 8.07 10.16 10.18 5.08 6.24 13.86 3.80 3.84 2.74 5° 4° 4° 4.85 1.37 2.89 0.96 0.61 15.24 8.85 10.31 10.38 6.44 14.08 4.04 2.94 TO-220AC • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • 12TQ150 12TQ150S SANGDEST MICROELECTRONICS Technical Data Data Sheet N0609, Rev. - Green Products Symbol A A1 A2 b b1 c c1 D D1 E E1 E2 e H L L1 L2 L3 e e1 e2 e3 Dimensions in millimeters Min. Typical Max. 4.55 0 2.59 0.71 0.36 1.17 8.55 6.40 10.01 7.6 9.98 14.6 2.00 1.17 0 4.70 0.10 2.69 0.81 1.27 0.38 1.27 8.70 4.85 0.25 2.89 0.96 0.61 1.37 8.85 10.16 10.31 10.08 2.54 15.1 2.30 1.27 10.18 15.6 2.70 1.40 2.20 0.25BSC 5° 4° 4° 8° D2PAK • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • 12TQ150 12TQ150S SANGDEST MICROELECTRONICS Technical Data Data Sheet N0609, Rev. - Green Products Marking Diagram: Where XXXXX is YYWWL 12TQ150 SSG YY WW L 12TQ150 =Part Name = SSG = Year = Week = Lot Number 12TQ150S Cautions:Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package TO-220AC (Pb-Free) D²PAK (Pb-Free) 12TQ150 12TQ150S Shipping 50pcs / tube 800pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Symbol VRWM Max. 150 Units V IF(AV) Condition 50% duty cycle @TC = 116°C, rectangular wave form 15 A IFSM 8.3 ms, half sine pulse 276 A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • 12TQ150 12TQ150S SANGDEST MICROELECTRONICS Technical Data Data Sheet N0609, Rev. - Green Products Electrical Characteristics: Characteristics Max. Forward Voltage Drop* Max. Reverse Current * Symbol VF1 VF2 IR1 IR2 Max. Junction Capacitance (per leg) Typical Series Inductance (per leg) Max. Voltage Rate of Change * CT LS dv/dt Condition @ 15A, Pulse, TJ = 25 °C @ 15A, Pulse, TJ = 125 °C @VR = rated VR Pulse TJ = 25 °C @VR = rated VR , Pulse TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz Measured lead to lead 5 mm from package body - Max. 0.86 0.70 1.0 Units V V mA 7 mA 500 pF 8.0 nH 10,000 V/μs Specification -55 to +175 -55 to +175 2.0 Units °C °C Pulse Width < 300µs, Duty Cycle
12TQ150 价格&库存

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12TQ150
    •  国内价格
    • 1+4.08240
    • 10+3.43440
    • 50+2.74320
    • 100+2.41920

    库存:164