MBR20150

MBR20150

  • 厂商:

    SMCDIODESOLUTIONS(桑德斯)

  • 封装:

    TO-220-2

  • 描述:

    特性:150℃ Tj 工作。 低正向压降。 高纯度、高温环氧树脂封装,增强机械强度和防潮性。 高频操作。 保护环,增强耐用性和长期可靠性。 这是无铅器件。应用:开关电源。 转换器

  • 数据手册
  • 价格&库存
MBR20150 数据手册
SANGDEST MICROELECTRONICS MBR20150 Technical Data Data Sheet N0038, Rev.- Green Products MBR20150 SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • • • • • • • • 150 °C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In Inches / mm Symbol A A1 A2 b b1 c D D1 E E1 e1 H1 L L1 ΦP Q Θ1 Θ2 Θ3 Dimensions in millimeters Min. Typical Max. 4.55 1.17 2.59 0.71 0.36 14.64 8.55 10.01 9.98 6.04 13.00 3.74 2.54 4.70 1.27 2.69 0.81 1.27 0.38 14.94 8.07 10.16 10.18 5.08 6.24 13.86 3.80 3.84 2.74 5° 4° 4° 4.85 1.37 2.89 0.96 0.61 15.24 8.85 10.31 10.38 6.44 14.08 4.04 2.94 TO-220AC • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBR20150 Technical Data Data Sheet N0038, Rev.- Green Products Marking Diagram: Where XXXXX is YYWWL MBR B 20 150 SSG YY WW L = Device Type = Package type = Forward Current (20A) = Reverse Voltage (150V) = SSG = Year = Week = Lot Number Cautions:Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package TO-220AC (Pb-Free) MBR20150 Shipping 50pcs / tube For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Max. Peak One Cycle NonRepetitive Surge Current Symbol VRWM IF(AV) IFSM Condition 50% duty cycle @TC =110°C, rectangular wave form 8.3 ms, half Sine pulse Max. 150 20 Units V A 250 A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBR20150 Technical Data Data Sheet N0038, Rev.- Green Products Electrical Characteristics: Characteristics Max. Forward Voltage Drop* Max. Reverse Current at DC condition Max. Reverse Current * * Symbol VF1 VF2 IR1 IR2 Non-Repetitive Avalanche Energy Max. Junction Capacitance EAS Typical Series Inductance (per leg) Max. Voltage Rate of Change LS CT dv/dt Condition @ 20A, Pulse, TJ = 25 °C @ 20 A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C TJ = 25 °C, IAS = 2 A, L = 1mH @VR = 5V, TC = 25 °C fSIG = 1MHz Measured lead to lead 5 mm from package body - Max. 0.95 0.92 1.0 Units V V mA 15.0 mA 2 mJ 900 pF 8.0 nH 10,000 V/μs Specification -55 to +150 -55 to +150 3.0 Units °C °C °C/W 1.6 g Pulse Width < 300µs, Duty Cycle
MBR20150 价格&库存

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MBR20150
  •  国内价格 香港价格
  • 1+15.492001+1.99989
  • 25+8.3085125+1.07256
  • 100+6.56799100+0.84788
  • 500+5.16778500+0.66712
  • 1000+4.717291000+0.60897
  • 2000+4.338382000+0.56005
  • 5000+3.928395000+0.50713
  • 10000+3.6751310000+0.47443

库存:36