BYV25FD-600,118

IMPORTANT NOTICE 10 December 2015 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details. In this document where the previous NXP references remain, please use the new links as shown below. WWW - For www.nxp.com use www.ween-semi.com Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) “© NXP Semiconductors N.V. {year}. All rights reserved” becomes “© WeEn Semiconductors Co., Ltd. {year}. All rights reserved” If you have any questions related to this document, please contact our nearest sales office via email or phone (details via salesaddresses@ween-semi.com). Thank you for your cooperation and understanding, WeEn Semiconductors DP AK BYV25FD-600 Enhanced ultrafast power diode Rev. 03 — 23 September 2016 Product data sheet 1. Product profile 1.1 General description Enhanced ultrafast power diode in a TO252 (DPAK) plastic package. 1.2 Features and benefits  High thermal cycling performance  Soft recovery characteristic  Low on-state losses  Surface-mountable package  Low thermal resistance 1.3 Applications  Dual Mode (DCM and CCM) PFC  Power Factor Correction (PFC) for Interleaved Topology 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VRRM repetitive peak reverse voltage IF(AV) average forward current Conditions Min Typ Max Unit - - 600 V square-wave pulse; δ = 0.5 ; Tmb ≤ 121 °C; see Figure 1; see Figure 2 - - 5 A IF = 5 A; Tj = 25 °C; see Figure 5 - 1.3 1.9 V IF = 5 A; Tj = 150 °C; see Figure 5 - 1.1 1.7 V IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; see Figure 6 - 17.5 35 Static characteristics VF forward voltage Dynamic characteristics trr reverse recovery time ns WeEn Semiconductors BYV25FD-600 Enhanced ultrafast power diode 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 n.c. not connected 2 K cathode[1] 3 A anode mb K mounting base; cathode Graphic symbol mb K A 001aaa020 2 1 3 TO252 (DPAK) [1]It is not possible to connect to pin 2 of the TO252 package. 3. Ordering information Table 3. Ordering information Type number Package BYV25FD-600 Name Description Version DPAK plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) TO252 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VRRM repetitive peak reverse voltage - 600 V VRWM crest working reverse voltage - 600 V VR reverse voltage DC - 600 V IF(AV) average forward current square-wave pulse; δ = 0.5 ; Tmb ≤ 121 °C; see Figure 1; see Figure 2 - 5 A IFRM repetitive peak forward current square-wave pulse; δ = 0.5 ; tp = 25 µs; Tmb ≤ 121 °C - 10 A IFSM non-repetitive peak forward current tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C; see Figure 3 - 60 A tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 °C; see Figure 3 - 66 A Tstg storage temperature -40 150 °C Tj junction temperature - 150 °C BYV25FD-600 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 23 September 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 2 of 10 WeEn Semiconductors BYV25FD-600 Enhanced ultrafast power diode 003aaf430 14 Ptot (W) 12 δ =1 003aaf431 10 Ptot (W) a = 1.57 1.9 8 0.5 10 2.2 2.8 6 8 0.2 4.0 0.1 6 4 4 2 2 0 0 0 2 4 6 8 0 1 2 3 4 5 IF(AV) (A) IF(AV) (A) Vo = 1.499 V; Rs = 0.041 Ω Vo = 1.499 V; Rs = 0.041 Ω Fig 1. Forward power dissipation as a function of average forward current; square waveform; maximum values Fig 2. Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values 003aaf446 103 IFSM (A) 102 P tp 101 10-5 10-4 10-3 t 10-2 tp (s) Fig 3. Non-repetitive peak forward current as a function of pulse width; square waveform; maximum values BYV25FD-600 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 23 September 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 3 of 10 WeEn Semiconductors BYV25FD-600 Enhanced ultrafast power diode 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 - - 3 K/W Rth(j-a) thermal resistance from junction to ambient in free air - 50 - K/W [1] [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 003aac235 10 Zth(j-mb) (K/W) 1 10−1 δ= P tp T 10−2 t tp 10−3 10−6 Fig 4. T 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Transient thermal impedance from junction to mounting base as a function of pulse width BYV25FD-600 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 23 September 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 4 of 10 WeEn Semiconductors BYV25FD-600 Enhanced ultrafast power diode 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics VF forward voltage IF = 5 A; Tj = 25 °C; see Figure 5 - 1.3 1.9 V IF = 5 A; Tj = 150 °C; see Figure 5 - 1.1 1.7 V IR reverse current VR = 600 V; Tj = 100 °C - - 1.5 mA VR = 600 V; Tj = 25 °C - - 50 µA Dynamic characteristics Qr recovered charge IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; see Figure 6 - 13 - nC trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; see Figure 6 - 17.5 35 ns IRM peak reverse recovery current IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; see Figure 6 - 1.5 - A VFRM forward recovery voltage IF = 1 A; dIF/dt = 100 A/µs; Tj = 25 °C; see Figure 7 - 3.2 - V 003aaf445 20 IF IF (A) 16 dlF dt trr 12 time (1) (2) (3) 25 % 8 100 % Qr 4 IR IRM 003aac562 0 0 1 2 3 VF (A) Vo = 1.499 V; Rs = 0.041 Ω (1) Tj = 150 °C; typical values; (2) Tj = 150 °C; maximum values; (3) Tj = 25 °C; maximum values; Fig 5. Forward current as a function of forward voltage BYV25FD-600 Product data sheet Fig 6. Reverse recovery definitions; ramp recovery All information provided in this document is subject to legal disclaimers. Rev. 03 — 23 September 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 5 of 10 WeEn Semiconductors BYV25FD-600 Enhanced ultrafast power diode IF time VF VFRM VF time 001aab912 Fig 7. Forward recovery definitions BYV25FD-600 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 23 September 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 6 of 10 WeEn Semiconductors BYV25FD-600 Enhanced ultrafast power diode 7. Package outline Fig. 8. Package outline DPAK (TO252N) BYV25FD-600 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 23 September 2016 WeEn Semiconductors Co., Ltd. 2016. All rights reserved 7 of 10 WeEn Semiconductors BYV25FD-600 Enhanced ultrafast power diode 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BYV25FD-600 v.2 20110307 Product data sheet - BYV25FD-600 v.1 - - Modifications: BYV25FD-600 v.1 BYV25FD-600 Product data sheet • Various changes to content. 20101001 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 23 September 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 8 of 10 WeEn Semiconductors BYV25FD-600 Enhanced ultrafast power diode 9. Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Legal information Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ween-semi.com. Definitions Draft — The document is a draft version only. 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Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an WeEn Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no liability for inclusion and/or use of WeEn Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. WeEn Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the WeEn Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific WeEn Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. WeEn Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without WeEn Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond WeEn Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies WeEn Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond WeEn Semiconductors’ standard warranty and WeEn Semiconductors’ product specifications. © BYV25FD-600 Product data sheet Rev. 03 — 23 September 2016 WeEn Semiconductors Co., Ltd. 2016. All rights reserved 9 of 10 WeEn Semiconductors BYV25FD-600 Enhanced ultrafast power diode Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. © BYV25FD-600 Product data sheet Rev. 03 — 23 September 2016 WeEn Semiconductors Co., Ltd. 2016. All rights reserved 10 of 10